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    Infineon Technologies AG IRFHM830TR2PBF

    MOSFET N-CH 30V 21A/40A PQFN
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    DigiKey IRFHM830TR2PBF Cut Tape 1
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    IRFHM830TR2PBF Digi-Reel 1
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    International Rectifier IRFHM830TR2PBF

    HEXFET POWER MOSFET Power Field-Effect Transistor, 21A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA IRFHM830TR2PBF 1,600
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    IRFHM830TR2PBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFHM830TR2PBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 21A PQFN Original PDF

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    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFHM830PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) 30 V 3.8 mΩ 15 2.5 RG (typical) ID nC Ω 40h (@Tc(Bottom) = 25°C) D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN A Applications • Battery Operated DC Motor Inverter MOSFET


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    IRFHM830PbF IRFHM830TRPBF IRFHM830TR2PBF PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97547A IRFHM830PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) 30 V 3.8 mΩ 15 2.5 RG (typical) ID D 5 4 G D 6 3 S nC D 7 2 S Ω D 8 1 S 3.3mm x 3.3mm PQFN 40h (@Tc(Bottom) = 25°C) A Applications • Battery Operated DC Motor Inverter MOSFET


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    7547A IRFHM830PbF IRFHM830TRPBF IRFHM830TR2PBF PDF

    IRFHM830PbF

    Abstract: IRFHM830TR2PBF IRFHM830 AN-1154 J-STD-020D 13002A SPN 0215 IRFHM830TR IRFHM830P
    Text: PD - 97547A IRFHM830PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) 30 V 3.8 mΩ 15 2.5 RG (typical) ID nC Ω 40h (@Tc(Bottom) = 25°C) D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN A Applications • Battery Operated DC Motor Inverter MOSFET


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    7547A IRFHM830PbF IRFHM830TRPBF IRFHM830TR2PBF IRFHM830PbF IRFHM830TR2PBF IRFHM830 AN-1154 J-STD-020D 13002A SPN 0215 IRFHM830TR IRFHM830P PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFHM830PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 3.8 mΩ 15 2.5 nC Ω 40h (@Tc(Bottom) = 25°C) 3.3mm x 3.3mm PQFN A Applications • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Low RDSon (<3.8mΩ)


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    IRFHM830PbF IRFHM830TRPBF IRFHM830TR2PBF PDF