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    IRF91 Search Results

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    IRF91 Price and Stock

    Rochester Electronics LLC IRF9133

    AUTOMOTIVE HEXFET P-CHANNEL POWE
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    DigiKey IRF9133 Bulk 55
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    Rochester Electronics LLC IRF9143

    MOSFET P-CH 80V 15A TO204AE
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    DigiKey IRF9143 Bulk 80
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    Infineon Technologies AG IRF9140SCX

    Transistor MOSFET P-Channel 100V 18A 2-Pin TO-3 - Bulk (Alt: IRF9140SCX)
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    Avnet Americas IRF9140SCX Bulk 100
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    International Rectifier IRF9130

    Trans MOSFET P-CH 100V 11A 3-Pin(2+Tab) TO-3 Tray
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    Arrow Electronics IRF9130 3,046 26 Weeks 5
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    Bristol Electronics IRF9130 35
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    Quest Components IRF9130 28
    • 1 $18
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    IRF9130 13
    • 1 $18
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    IRF9130 1
    • 1 $22.0396
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    ComSIT USA IRF9130 13
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    Vishay Siliconix IRF9140

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    Bristol Electronics IRF9140 500
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    Find more IRF91 price and stock on Findchips.com

    IRF91 Datasheets (98)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF9120 Unknown FET Data Book Scan PDF
    IRF9121 Unknown FET Data Book Scan PDF
    IRF9122 Unknown FET Data Book Scan PDF
    IRF9123 Unknown FET Data Book Scan PDF
    IRF9130 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF9130 International Rectifier HEXFET Transistor Original PDF
    IRF9130 Intersil -12A, -100V, 0.30 ?, P-Channel Power MOSFET Original PDF
    IRF9130 Semelab P-Channel Power MOSFET Original PDF
    IRF9130 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF9130 International Rectifier TO-3 N-Channel Scan PDF
    IRF9130 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF9130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9130 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF9130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9130 Unknown FET Data Book Scan PDF
    IRF9130 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF9130 Samsung Electronics P-CHANNEL POWER MOSFETS Scan PDF
    IRF9130 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRF9130SMD Semelab P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF
    IRF9130SMD05 Semelab P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF

    IRF91 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF9130

    Abstract: IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804
    Text: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International


    Original     		PDF 90549C IRF9130 JANTX2N6804 JANTXV2N6804 O-204AA/AE) MIL-PRF-19500/562] -100V parellelin252-7105 IRF9130 IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804

    IRF9140

    Abstract: No abstract text available
    Text: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF 93976B IRF9140 O-204AA/AE) -100V -100A/ -100V, --TO-204AA IRF9140

    Untitled

    Abstract: No abstract text available
    Text: IRF9130SMD05N IRFN9130SMD05 MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 )


    Original     		PDF IRF9130SMD05N IRFN9130SMD05 -100V IRF9130SMD05 IRFN913" IRFN9130SMD05 IRFN9130SMD05-JQR-B O276AA) 860pF

    Untitled

    Abstract: No abstract text available
    Text: IRF9140 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)


    Original     		PDF IRF9140 300ms,

    IRF9150

    Abstract: No abstract text available
    Text: IRF9150 Data Sheet February 1999 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRF9150 -100V, -100V IRF9150

    IRF9140

    Abstract: TA17521 TB334
    Text: IRF9140 Data Sheet February 1999 -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF9140 -100V, TA17521. O-204AA IRF9140 TA17521 TB334

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD219409 TECHNICAL DATA DATA SHEET 682, REV - Formerly part number SHD2199 HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series


    Original     		PDF SHD2199 SHD219409 IRF9140 CHARACTERISTIC221 SHD219409

    Untitled

    Abstract: No abstract text available
    Text: PD - 93976 IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF O-204AA/AE) IRF9140 -100V

    IRF9140

    Abstract: No abstract text available
    Text: IRF9140 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) VDSS ID(cont) RDS(on) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655)


    Original     		PDF IRF9140 300ms, IRF9140

    Untitled

    Abstract: No abstract text available
    Text: IRF9130SMD MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9


    Original     		PDF IRF9130SMD -100V 00A/ms

    IRF9130SMD05

    Abstract: IRF9130SMD05N IRFN9130SMD05
    Text: IRF9130SMD05N IRFN9130SMD05 MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 )


    Original     		PDF IRF9130SMD05N IRFN9130SMD05 -100V 00A/ms IRF9130SMD05 IRF9130SMD05N IRFN9130SMD05

    irf9120

    Abstract: SHD230209 IRF9120 mosfet mosfet gate source voltage 20v
    Text: SENSITRON SEMICONDUCTOR SHD230209 TECHNICAL DATA DATA SHEET 318, REV. A HERMETIC POWER MOSFET P-CHANNEL QUAD FEATURES: œ -100 Volt, 0.60 Ohm, -3.5A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF9120 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD230209 IRF9120 030Typ LCC-28T LCC-28T SHD230209 IRF9120 mosfet mosfet gate source voltage 20v

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218409 SHD218409A SHD218409B TECHNICAL DATA DATA SHEET 349, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series


    Original     		PDF SHD218409 SHD218409A SHD218409B IRF9140

    IRF9130

    Abstract: IRF9130 mosfet 5676 gate drive for mosfet irf9130
    Text: IRF9130 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)


    Original     		PDF IRF9130 300ms, IRF9130 IRF9130 mosfet 5676 gate drive for mosfet irf9130

    diode bs 9300

    Abstract: lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


    Original     		PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) IRFNJ9130 IRF9130SMD05DSG" IRF9130SMD05DSG O276AA) diode bs 9300 lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w

    IRF9130 mosfet

    Abstract: IRF9130 501 mosfet transistor IRF9132 gate driver for mosfet irf9130 IRF9131 IRF9133 92CS-43394
    Text: Rugged Power MOSFETs File N um ber 2220 IR F9130, IRF9131 IRF9132, IR F9133 Avalanche-Energy-Rated P-Channel Power MOSFETs - 1 0 A Td s a n d o n = - 1 2 A , 0 . 3 0 0 - 6 0 V a n d a n d TERMINAL DIAGRAM - 1 0 0 V 0 . 4 0 0 Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF9130, IRF9131 IRF9132, IRF9133 -100V 92CS-43262 IRF9131, IRF9132 IRF9133 IRF9130 mosfet IRF9130 501 mosfet transistor gate driver for mosfet irf9130 IRF9131 92CS-43394

    IRF9150

    Abstract: IRF9151 IRF150 SCVIRFP9150CF1 MOSFET IRF150
    Text: Rugged Power MOSFETs File Num ber IRF9150, IRF9151 2280 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power Field-Effect Transistors 25 A, 60 V and 100 V P-CHANNEL ENHANCEMENT MODE fDS on = 0 .1 5 0 Q Features: • SOA is pow er-dissipation lim ite d


    OCR Scan     		PDF IRF9150, IRF9151 IRF9150 IRF9151 IRF150 SCVIRFP9150CF1 MOSFET IRF150

    1RF9540

    Abstract: l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220 IRF9540
    Text: 7964142 SAMSUNG S E M I C O N D U C T O R INC Hfl DE 1 7 ^ 4 1 4 5 IRF9140/9141/9142/9143 IRFP9140/9141 /9142/9143 “ IRF9540/9541Z9542/9543_ ^ " D0GS40Ö t- P-CHANNEL POWER MOSFETS Preliminary Specifications - 1 0 0 Volt, 0.2 Ohm SFET PRODUCT SUMMARY


    OCR Scan     		PDF D0GS40Ö IRF9140/ IRFP9140/9141 IRF9540/ 9541Z IRF/IRFP9140, IRF9540 IRF/IRFP9141, IRF9541 IRF/IRFP9142, 1RF9540 l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220

    IRF9130

    Abstract: IRF9131 irf930 IRF9130 mosfet gate drive for mosfet irf9130 P-channel HEXFET Power MOSFET IRF9132
    Text: H E 0 I MâS 54 52 000^214 5 | Data Sheet No. PD-9.318E INTERNATIONAL RECTIFIER « in t e r n a t io n a l r e c t i f i e r I«R HEXFET TRANSISTORS IRF91 3 0 IRF9131 IRFS1 3 2 Channel IRFS1 3 3 -100 Volt, 0.3 Ohm HEXFET The HEXFET technology is the key to International Rectifier’s


    OCR Scan     		PDF IRF91 IRF9131 G-196 IRF9130 IRF9131 irf930 IRF9130 mosfet gate drive for mosfet irf9130 P-channel HEXFET Power MOSFET IRF9132

    IRF 850 mosfet

    Abstract: 9150C
    Text: 2 3 H A R R IRF9150 IRF9151 I S Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Package Features T 0 -2 0 4 A E BOTTOM VIEW • -25A , -8 0 V and -1 0 0 V • r D S 0 N = 0.1 s o n DRAIN (FLANGE) SOURCE • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRF9150 IRF9151 IRF9151 HESIRF9t50CFI RF9250CF1 IHF9I50CF2 IRF 850 mosfet 9150C

    diode 6.2

    Abstract: No abstract text available
    Text: lili SEM E IRF9140 LAB MECHANICAL DATA D im e nsio ns in mm inches P-CHANNEL POWER MOSFET -1 0 0 V V DSS -1 8 A I D(cont) 0.2Q ^D S (on) FEATURES • HERMETICALLY SEALED T O -3 METAL PACKAGE 20.32 (0.800) 18.80 (0.740) dia. • SIMPLE DRIVE REQUIREMENTS


    OCR Scan     		PDF IRF9140 500mJ diode 6.2

    irf9140

    Abstract: No abstract text available
    Text: IRF9140, IRF9141, IRF9142, IRF9143 HARRIS S E M I C O N D U C T O R •19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs November 1997 Features Description • -1 9A and -1 5A, -80V and -1 00V • High Input Im pedance These are P-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF9140, IRF9141, IRF9142, IRF9143 -100V, TA17521. RF9142, irf9140

    1RF9140

    Abstract: F9142 IRF high current p-channel lts 543 pin diagram F9140 IRF 543 MOSFET
    Text: H A R R I S IRF9140, IRF9141 IRF9142, IRF9143 Avalanche Energy Rated P-Channel Power MOSFETs Ja n u ary 1 994 Package Features T O -2 0 4 A A BOTTOM VIEW • -19 A and -15A , -80 V and -100V • rQS ON = 0 .2 0 0 and 0.30H DRAIN (FLANGE) SOURCE • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRF9140, IRF9141 IRF9142, IRF9143 -100V IRF9141, IRF9142 IRF9143 1RF9140, 1RF9140 F9142 IRF high current p-channel lts 543 pin diagram F9140 IRF 543 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: Government and Space llltemationsl HEXFET Power MOSFETs liQ R lR e c t if ie r Hermetic Package P-Channel Part Number BVq s s V IRF9130 -100 RDS(on) (Ohms) 0.3 Id @ Tr = 25°C Id @ TC = 100°C RthJC Max. (K/W) c (*i (A) -11 -7.0 1.67 Outline (W) Number (1)


    OCR Scan     		PDF IRF9130 2N6804 JANTX2N6804 JANTXV2N6804 IRF9140 IRF9230 2N6806 JANTX2N6806 JANTXV2N6806 IRF9240