IRF630
Abstract: mosfet morocco IRF630FP IRF630 p
Text: IRF630 IRF630FP N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES
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IRF630
IRF630FP
O-220/FP
IRF630F
O-220
O-220FP
IRF630
mosfet morocco
IRF630FP
IRF630 p
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PDF
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IRF630
Abstract: IRF630FP
Text: IRF630 IRF630FP N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES
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IRF630
IRF630FP
O-220/FP
IRF630F
O-220
O-220FP
IRF630
IRF630FP
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PDF
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IRF630
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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IRF630,
SiHF630
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF630
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PDF
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IRF630pbf
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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Original
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IRF630,
SiHF630
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF630pbf
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PDF
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Untitled
Abstract: No abstract text available
Text: <zz>£tni-C.onauctoi J loaucti, L/nc, LJ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630 0(2) DESCRIPTION • Drain Current -ID=9A@ TC=25°C • Drain Source Voltage-
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IRF630
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PDF
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IRF632 datasheet
Abstract: IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild
Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF630,
RF1S630SM
TA17412.
IRF632 datasheet
IRF630 datasheet
IRF630
IRF632
RF1S630SM
RF1S630SM9A
TB334
IRF630 mosfet
IRF630 Fairchild
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PDF
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IRF630PBF
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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Original
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IRF630,
SiHF630
2002/95/EC
O-220AB
11-Mar-11
IRF630PBF
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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Original
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IRF630,
SiHF630
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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Original
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IRF630,
SiHF630
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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Original
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IRF630,
SiHF630
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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Original
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IRF630,
SiHF630
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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Original
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IRF630,
SiHF630
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SEC irf630
Abstract: No abstract text available
Text: J.E.IIS.U ^E.ml-L.onaucko'i , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. IRF630,631 D84DN2,M2 9.0 AMPERES 200,150 VOLTS "DS(ON) = 0.4 n N-CHANNEL [RUT CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
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IRF630
D84DN2
O-220AB
100ms
IRF630/D84DN2
IRF631/D84DM2-^
SEC irf630
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PDF
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tektronix 576 curve tracer
Abstract: No abstract text available
Text: VISHAY SILICONIX Power MOSFETs Application Note AN-957 Measuring Power MOSFET Characteristics TABLE OF CONTENTS Page 1. General Information . 2
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AN-957
18-Nov-10
tektronix 576 curve tracer
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PDF
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transistor 2N2222 smt
Abstract: 200v 5A mosfet 4n29 optocoupler Bill Andreycak 1K 1/4W Resistor 2N2222 circuit 2N2222 NPN Transistor features UNITRODE product and applications handbook transistor 2N2222 smt npn Unitrode Semiconductor 1n4148
Text: DN-67 Design Note UCC3913 Electronic Circuit Breaker for Negative Voltage Applications Evaluation Kit List of Materials for a -48V/1A Test Circuit by Bill Andreycak Many battery powered and Telecommunications power supplies use some form of protection to prevent high currents from flowing during a short
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DN-67
UCC3913
-48V/1A
UDG-95072
F/16VDC
5nF/16VDC
1N4148
IRF630
00V/5A
transistor 2N2222 smt
200v 5A mosfet
4n29 optocoupler
Bill Andreycak
1K 1/4W Resistor
2N2222 circuit
2N2222 NPN Transistor features
UNITRODE product and applications handbook
transistor 2N2222 smt npn
Unitrode Semiconductor 1n4148
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PDF
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2N2222 TRANSISTOR TOSHIBA
Abstract: 99127 SLUU077 smd2512 toshiba power supply SMD-2512 4n29 optocoupler Unitrode Semiconductor 1n4148 Bill Andreycak 2N2222 circuit
Text: DN-67 Design Note UCC3913 or UCC3921 Hot Swap Power Manager for Negative Voltage Applications Evaluation Kit, Schematic, and List of Materials for a –48V/1A Test Circuit by Bill Andreycak Many battery powered and telecommunications power supplies use some form of protection to prevent high currents from flowing during a short circuit or overload condition. This function is often
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DN-67
UCC3913
UCC3921
F/16VDC
5nF/16VDC
1N4148
IRF630
IRF630S
2N2222
00V/5A
2N2222 TRANSISTOR TOSHIBA
99127
SLUU077
smd2512
toshiba power supply
SMD-2512
4n29 optocoupler
Unitrode Semiconductor 1n4148
Bill Andreycak
2N2222 circuit
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PDF
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TRANSISTOR REPLACEMENT GUIDE
Abstract: SMD-2512 texas instruments transistor manual smd2512 transistor 99127 48VDC POWER SUPPLY UCC3921 SLUS274 HOT SWAP UDG-99127
Text: Application Report SLUU076A - August 2000 UCC3913 or UCC3921 Hot Swap Power Manager Evaluation Board Power Management Products 1 Evaluation Board Operation This user’s guide highlights the UCC3913/ UCC3921 evaluation board in a typical –48-Vdc, 1-A application circuit.
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Original
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SLUU076A
UCC3913
UCC3921
UCC3913/
48-Vdc,
swit12
IRF630
IRF630S
PN2222/A
TRANSISTOR REPLACEMENT GUIDE
SMD-2512
texas instruments transistor manual
smd2512
transistor 99127
48VDC POWER SUPPLY
SLUS274
HOT SWAP
UDG-99127
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PDF
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2n2222 texas instruments mosfet
Abstract: transistor 2N2222 smt 2N2222 Replacement 2n2222 npn Unitrode Semiconductor 1n4148 Unitrode DN-67 1N4148 DN-67 UCC3831 UCC3913
Text: DN-67 Design Note UCC3913 or UCC3921 Hot Swap Power Manager for Negative Voltage Applications Evaluation Kit, Schematic, and List of Materials for a –48V/1A Test Circuit by Bill Andreycak Many battery powered and telecommunications power supplies use some form of protection to prevent high currents from flowing during a short circuit or overload condition. This function is often
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Original
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DN-67
UCC3913
UCC3921
2n2222 texas instruments mosfet
transistor 2N2222 smt
2N2222 Replacement
2n2222 npn
Unitrode Semiconductor 1n4148
Unitrode DN-67
1N4148
DN-67
UCC3831
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PDF
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TRANSISTOR REPLACEMENT GUIDE
Abstract: SMD2512 UDG-99127 UCC3921 1N4148 IRF630 IRF630S UCC3913 SLUS274 texas instruments transistor manual
Text: Application Report SLUU076A - August 2000 UCC3913 or UCC3921 Hot Swap Power Manager Evaluation Board Power Management Products 1 Evaluation Board Operation This user’s guide highlights the UCC3913/ UCC3921 evaluation board in a typical –48-Vdc, 1-A application circuit.
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Original
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SLUU076A
UCC3913
UCC3921
UCC3913/
48-Vdc,
TRANSISTOR REPLACEMENT GUIDE
SMD2512
UDG-99127
1N4148
IRF630
IRF630S
SLUS274
texas instruments transistor manual
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PDF
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IRFBE30 equivalent
Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566
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May-97
Sep-95
Sep-94
IRFBE30 equivalent
irf9640 REPLACEMENT GUIDE
IRGKI200F06
IRGP440U replacement
IRF3205 smd
IRGBC20FD2
IRFK3D450
IRFBg30 equivalent
IRGNIN150M06
irc540
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PDF
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IRF734
Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
Text: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566
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FA38SA50LC
OT-227
FA57SA50LC
FB180SA10
IRC530
O-220
IRC540
IRF734
irf9640 REPLACEMENT GUIDE
IRF3205 smd
IRGTI165F06
irg4pc50fd
*g4pc50w
IRGKI115U06
IRGTI200F06
*gBC20f
IRLIZ34
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF630 IRF630FP N - CHANNEL 200V - 0.35Î2 - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE V IR F 630 IR F 6 3 0 F P • . . . dss 200 V 200 V R D S o n Id < 0 .4 0 Q. < 0 .4 0 Q. 9 A 9 A TYPICAL RDS(on) = 0.35 EXTREMELY HIGHdV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES
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OCR Scan
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IRF630
IRF630FP
O-220/FP
IRF630/FP
O-22QFP
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PDF
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IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313
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OCR Scan
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
IRF722P
IRF732P
SGSP3055
IRF730P
1rfp450
IRF510
SGSP312
IRF540FI
irf522p
MTP20N10
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PDF
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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OCR Scan
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
TP8N10
th15n20
TH7N50
TP4N10
TP10N05
IRFP350FI
TP5N35
tp5n40
TP4N45
TP3N40
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PDF
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