Untitled
Abstract: No abstract text available
Text: MAXQ FAMILY USER’S GUIDE Program Memory Data Memory IR Instruction Decoder Source Destination IP DP SP 1:16 16:1 ALU I/O I/O Functional Diagrams I/O Note: The MAXQ Family User's Guide should be used in conjunction with the data sheet s for MAXQ microcontrollers.
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MAXQ10
Abstract: MAXQ20 sram book BP3150
Text: Rev: 6; 9/08 MAXQ FAMILY USER’S GUIDE Program Memory Data Memory IR Instruction Decoder Source Destination IP DP SP 1:16 16:1 ALU I/O I/O I/O Note: The MAXQ Family User's Guide should be used in conjunction with the data sheet s for MAXQ microcontrollers.
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1838 infrared
Abstract: 1838 ir receiver 1836 3v Photo 1838 b infrared IR 1838 T Pin number IR 1836 3v IR 1838 ir receivers 1838 IR 1838 T photo transistor ir receivers 1838 datasheet
Text: TFMN18. Vishay Telefunken Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TFMN 1830 TFMN 1836 TFMN 1838 TFMN 1856 fo 30 kHz 36 kHz 38 kHz 56 kHz Type TFMN 1833 TFMN 1837 TFMN 1840 fo 33 kHz 36.7 kHz 40 kHz
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TFMN18.
D-74025
16-Mar-99
1838 infrared
1838 ir receiver
1836 3v Photo
1838 b infrared
IR 1838 T Pin number
IR 1836 3v
IR 1838
ir receivers 1838
IR 1838 T photo transistor
ir receivers 1838 datasheet
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1838 b infrared
Abstract: 1838 t ir sensor 1838 t ir sensor, 3 pin IR 1838 3v IR 1838 T Pin number 1838 ir remote sensor 1838 t infrared 1838 infrared 1836 3v Photo 1838 b ir sensor
Text: TFMM18. Vishay Telefunken Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TFMM 1830 TFMM 1836 TFMM 1838 TFMM 1856 fo 30 kHz 36 kHz 38 kHz 56 kHz Type TFMM 1833 TFMM 1837 TFMM 1840 fo 33 kHz 36.7 kHz 40 kHz
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TFMM18.
D-74025
16-Mar-99
1838 b infrared
1838 t ir sensor
1838 t ir sensor, 3 pin
IR 1838 3v
IR 1838 T Pin number
1838 ir remote sensor
1838 t infrared
1838 infrared
1836 3v Photo
1838 b ir sensor
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ph 4148 zener diode
Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vHN-db1102-0407
ph 4148 zener diode
ka6 transistor smd
Marking Code SMD databook
melf diodes color code 4148
TRANSISTOR SMD MARKING CODE w2
GLUE IR-130
smd diode sod-323 marking code L2
smd diode marking 5d SOD-323
SOD-123 a2 4148
TRANSISTOR SMD MARKING CODE 352
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Untitled
Abstract: No abstract text available
Text: 4/16/2010 120W Constant Current LED Driver LEDWC120 series FEATURES ¾Ultra High Efficiency Up to 91% ¾Active Power Factor Correction (Up to 0.99) ¾Waterproof (IP67) ¾Dimming Function ¾Lightning Protection ¾Over Voltage, Over Temp. & Short Circuit Protection
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LEDWC120
UL8750
EN61347
230Vac
CA93065
120SXXXST
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Untitled
Abstract: No abstract text available
Text: BAR63V-04W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-04W
OT-323
BAR63V-04W
D-74025
17-Sep-03
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Untitled
Abstract: No abstract text available
Text: BAR63V-03W VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-03W
OT-323
BAR63V-03W
D-74025
17-Sep-03
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Untitled
Abstract: No abstract text available
Text: BAR64V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-03W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be
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BAR64V-03W
OT-323
BAR64V-03W
2002/95/EC
2002/96/EC
D-74025
15-Apr-05
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BAR64V-03W
Abstract: BAR64V-03W-GS08 BAR64V-03W-GS18
Text: BAR64V-03W VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-03W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be
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BAR64V-03W
OT-323
BAR64V-03W
OT-323)
D-74025
26-Apr-04
BAR64V-03W-GS08
BAR64V-03W-GS18
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BAR63V-04W
Abstract: BAR63V-04W-GS08 BAR63V-04W-GS18
Text: BAR63V-04W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-04W
OT-323
BAR63V-04W
OT-323)
D-74025
26-Apr-04
BAR63V-04W-GS08
BAR63V-04W-GS18
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Untitled
Abstract: No abstract text available
Text: BAR63V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-03W
OT-323
BAR63V-03W
2002/95/EC
2002/96/EC
OT-323
D-74025
15-Apr-05
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Untitled
Abstract: No abstract text available
Text: BAR63V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-04W
OT-323
BAR63V-04W
2002/95/EC
2002/96/EC
OT-323
D-74025
15-Apr-05
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Untitled
Abstract: No abstract text available
Text: BAR63V-04W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-04W
OT-323
BAR63V-04W
D-74025
17-Dec-03
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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LM1871 LM1872
Abstract: 3361a LM386LM 8 pin lm 386 LM-1040 LM833AM LM3189 LM1035 Dolby S cassette Lm4500
Text: Radio Circuits Selection Guide ZWANational ÉSA Semiconductor R a d io C ir c u it s S e le c tio n G u id e AM RF/IF Detector « . Device » Portable . Home . . Auto „ „ , Synthesized LM1863 LM1866 LM1868 LM3820 • • • • • • • • • •
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0-18V
0EM00
LM1871 LM1872
3361a
LM386LM
8 pin lm 386
LM-1040
LM833AM
LM3189
LM1035
Dolby S cassette
Lm4500
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ROE eb capacitor
Abstract: No abstract text available
Text: 7 ^ 2 3 7 G 0225b 4 T S G S - T H O M S O N ^ 0 g ^ ( s lL iÙ ir [ K M 0 S 30E D S G S-THOMSON 3.5A SWITCHING REGULATOR ADVANCE DATA • ■ ■ ■ ■ ■ ■ ■ . ■ ■ ■ ■ 3.5A OUTPUT CURRENT 5.1 V TO 40V OUTPUT VOLTAGE RANGE 0 TO 90% DUTY CYCLE RANGE
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0225b
200KHz
L4974
10OKHz)
V/12V
L4970.
L4974
100KHz
ROE eb capacitor
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TIL Display
Abstract: No abstract text available
Text: OPERATING MANUAL Industrial Products A DIVISION OF NORTH AMERICAN AVIATION, I NC. 3 5 8 4 W IL S H IR E BOULEVARD, LOS ANG ELES 5, CALIFORNIA 1336 OPERATING MANUAL FOR RECOMP II The in f o r m a tio n c o n ta in e d in this m a n u a l is g e n e r a lly a p p lic a b le
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512-E
TIL Display
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M39022/13-B106GP
Abstract: M39022/10-L334JP
Text: € 1 SPRAGUE MIL STYLE FILM CAPACITORS MIL-C-39022/01 HERMETICALLY-SEALED CAPACITORS TO MILITARY SPECIFICATION MIL-C- 39022/01 MIL STYLE CHR09 PART NUM BERING SYSTEM M39022/01 - 1001 DASH NUMBER. S E E S T A N D A R D R A T IN G T A B LE S . N U M B E R S H A L L C O R R E S P O N D T O D E S IR E D V O L T A G E R A T IN G , C A P A C IT A N C E V A LU E ,
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MIL-C-39022/01
CHR09
M39022/01
MIL-C-39022/01.
M39022/08M39022/08M39022/08M39022/08-
M39022/13-B106GP
M39022/10-L334JP
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Untitled
Abstract: No abstract text available
Text: 4 7 THIS DRAWING 15 UNPUBLI5HED. COPYRIGHT - 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST AA 00 LTR DESCRIPTION B DATE ECO —06 —01 1837 DWN APVD LAM JW 20M AY 2006 MATERIAL: HOUSING - HIGH TEM P ERATU RE
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16JUN2005
16JUN2005
31MAR2000
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R T SCAN18373T Transparent Latch with 3-STATE Outputs General Description Features The S C A N 18373T is a high speed, low -pow er transparent latch featuring separate data inputs organized into dual 9-bit bytes with byte-oriented latch enable and output enable con
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SCAN18373T
18373T
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smd code A06
Abstract: smd diode UJ 64 A 5962-9320701MXA SCAN18374T SCAN18374TFMQB SCAN18374TSSC SCAN18374TSSCX
Text: EMICDNDUCTOR t SCAN18374T D Flip-Flop with 3-STATE Outputs General Description Features The S C A N 18374T is a high speed, low -pow er D-type flip-flop featuring separate D -type inputs organized into dual 9-bit bytes with byte-oriented clock and output enable control
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SCAN18374T
SCAN18374T
smd code A06
smd diode UJ 64 A
5962-9320701MXA
SCAN18374TFMQB
SCAN18374TSSC
SCAN18374TSSCX
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cassette tape head
Abstract: LM1837
Text: SGS-THOMSON LM 1837 DUAL LOW NOISE TAPE PREAMPLIFIER WITH AUTOREVERSE • PROGRAMM ABLE TURN-ON DELAY ■ TRANSIENT-FREE MUTING AND POWER-UP NO POPS ■ LOW-NOISE 0.6 p.V/ CCIR/ARM ■ HIGH POWER SUPPLY REJECTION - 95 dB ■ LOW DISTORTION 0.03 % AND HIGH SLEW
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LM1837
cassette tape head
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IRF730
Abstract: IRF731 IRF733 RF733 transistor IRF730 IRF732 LMIT
Text: 3875081 G E SOL I D ST ATE T-39-11 □ 1 Standard Pow er M O S F E T s _ IRF730, IRF731, IRF732, IRF733 File Number 1580 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C E M E N T M ODE N-Channel Enhancement-Mode Power Field-Effect Transistors
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3fl75Dfl
T-39-11
IRF730,
IRF731,
IRF732,
IRF733
50V-400V
IRF732
IRF730
IRF731
IRF733
RF733
transistor IRF730
LMIT
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