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    Infineon Technologies AG IPI100N08N3GHKSA1

    MOSFET N-CH 80V 70A TO262-3
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    IPI100N08N3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPI100N08N3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 80.0 V; RDS (on) (max) (@10V): 9.7 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 70.0 A; Original PDF
    IPI100N08N3GHKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 70A TO262-3 Original PDF

    IPI100N08N3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100n08n

    Abstract: IPB097N08N3 IEC61249-2-21 PG-TO220-3
    Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 9.7 mΩ ID 70 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPP100N08N3 IPI100N08N3 IPB097N08N3 IEC61249-2-21 PG-TO220-3 PG-TO262-3 PG-TO263-3 100n08n IEC61249-2-21 PG-TO220-3

    097N08N

    Abstract: 100n08n IPP100N08N3 G PG-TO220-3 JESD22 652 smd D46 diode
    Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max (SMD) 9.7 mΩ ID 70 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPP100N08N3 IPI100N08N3 IPB097N08N3 PG-TO220-3 PG-TO262-3 PG-TO263-3 100N08N 097N08N 100n08n IPP100N08N3 G PG-TO220-3 JESD22 652 smd D46 diode

    aK 9AA diode

    Abstract: No abstract text available
    Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 Q฀ @D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC V 9H 0( J R ,?>=1H฀,& 1&/ Y


    Original     		PDF IPP100N08N3 IPI100N08N3 IPB097N08N3 CG9D389 381B75à D5CD54 D1B75Dà 931D9? aK 9AA diode

    75D diode

    Abstract: No abstract text available
    Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 0( J 1&/ Y" /( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		PDF IPP100N08N3 IPI100N08N3 IPB097N08N3 75D diode

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J