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Infineon Technologies AG IPD50R380CEAUMA1 MOSFET N-CH 500V 14.1A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD50R380CEAUMA1	Cut Tape	20,245		1	1 $1.61 10 $1.021 100 $1.61 1000 $0.49136 10000 $0.49136	Buy Now
	IPD50R380CEAUMA1	Digi-Reel	20,245		1	1 $1.61 10 $1.021 100 $1.61 1000 $0.49136 10000 $0.49136	Buy Now
	IPD50R380CEAUMA1	Reel	15,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.40625	Buy Now
Avnet Americas	IPD50R380CEAUMA1	Reel		15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD50R380CEAUMA1		8,314			1 $1.08 10 $0.866 100 $0.605 1000 $0.45 10000 $0.406	Buy Now
Chip1Stop	IPD50R380CEAUMA1	Cut Tape	6			1 - 10 $0.702 100 $0.702 1000 $0.702 10000 $0.702	Buy Now
EBV Elektronik	IPD50R380CEAUMA1		940,000	16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

New Advantage Corporation	IPD50R380CEAUMA1		745,000		1	1 - 10 - 100 - 1000 - 10000 $0.5694	Buy Now
Infineon Technologies AG IPD50P04P413ATMA2 MOSFET P-CH 40V 50A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD50P04P413ATMA2	Digi-Reel	8,119		1	1 $1.68 10 $1.065 100 $1.68 1000 $0.51303 10000 $0.51303	Buy Now
	IPD50P04P413ATMA2	Cut Tape	8,119		1	1 $1.68 10 $1.065 100 $1.68 1000 $0.51303 10000 $0.51303	Buy Now
	IPD50P04P413ATMA2	Reel	7,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.46042	Buy Now
Avnet Americas	IPD50P04P413ATMA2	Reel		12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD50P04P413ATMA2		7,945			1 $1.09 10 $0.899 100 $0.631 1000 $0.485 10000 $0.412	Buy Now
Arrow Electronics	IPD50P04P413ATMA2		2,500	12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.4104	Buy Now
	IPD50P04P413ATMA2		2,500	12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.4603	Buy Now
Newark	IPD50P04P413ATMA2	Cut Tape	8,988		1	1 $1.42 10 $1.1 100 $0.895 1000 $0.626 10000 $0.626	Buy Now

Rochester Electronics	IPD50P04P413ATMA2		48,806		1	1 $0.4583 10 $0.4583 100 $0.4308 1000 $0.3896 10000 $0.3896	Buy Now
Chip1Stop	IPD50P04P413ATMA2	Cut Tape	2,490			1 $1.23 10 $0.83 100 $0.58 1000 $0.513 10000 $0.512	Buy Now
EBV Elektronik	IPD50P04P413ATMA2		7,500	13 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IPD50P04P413ATMA2		5,000		1	1 - 10 - 100 - 1000 - 10000 $0.6015	Buy Now
Infineon Technologies AG IPD50N06S2L13ATMA2 MOSFET N-CH 55V 50A TO252-31
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD50N06S2L13ATMA2	Cut Tape	4,787		1	1 $2.17 10 $1.388 100 $2.17 1000 $0.69175 10000 $0.69175	Buy Now
	IPD50N06S2L13ATMA2	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.61138	Buy Now
Avnet Americas	IPD50N06S2L13ATMA2	Reel		12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.60404	Buy Now
	IPD50N06S2L13ATMA2	Reel		12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD50N06S2L13ATMA2		30,972			1 $1.38 10 $1.03 100 $0.803 1000 $0.652 10000 $0.603	Buy Now
Newark	IPD50N06S2L13ATMA2	Cut Tape	8,706		5	1 $1.57 10 $1.25 100 $1.04 1000 $0.751 10000 $0.751	Buy Now
Rochester Electronics	IPD50N06S2L13ATMA2		35,364		1	1 $0.6793 10 $0.6793 100 $0.6385 1000 $0.5774 10000 $0.5774	Buy Now

Chip1Stop	IPD50N06S2L13ATMA2	Cut Tape	2,440			1 $1.29 10 $1.06 100 $0.824 1000 $0.643 10000 $0.642	Buy Now
EBV Elektronik	IPD50N06S2L13ATMA2			13 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPD50N08S413ATMA1 MOSFET N-CH 80V 50A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD50N08S413ATMA1	Cut Tape	4,138		1	1 $1.66 10 $1.055 100 $1.66 1000 $0.50965 10000 $0.50965	Buy Now
	IPD50N08S413ATMA1	Digi-Reel	4,138		1	1 $1.66 10 $1.055 100 $1.66 1000 $0.50965 10000 $0.50965	Buy Now
	IPD50N08S413ATMA1	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.4245	Buy Now
Avnet Americas	IPD50N08S413ATMA1	Reel		12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD50N08S413ATMA1		7,919			1 $1.29 10 $0.967 100 $0.663 1000 $0.51 10000 $0.424	Buy Now
Rochester Electronics	IPD50N08S413ATMA1		27,910		1	1 $0.4717 10 $0.4717 100 $0.4434 1000 $0.4009 10000 $0.4009	Buy Now
Chip 1 Exchange	IPD50N08S413ATMA1		4,561			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Chip1Stop	IPD50N08S413ATMA1	Cut Tape	2,450			1 $1.22 10 $1.08 100 $0.892 1000 $0.567 10000 $0.565	Buy Now
EBV Elektronik	IPD50N08S413ATMA1		2,500	13 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IPD50N08S413ATMA1		2,500		1	1 - 10 - 100 - 1000 - 10000 $0.6758	Buy Now
UMW IPD50P04P4L11 MOSFET P-CH 40V 50A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD50P04P4L11	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.5125	Buy Now
	IPD50P04P4L11	Digi-Reel	2,500		1	1 $1.58 10 $1.069 100 $1.58 1000 $0.56497 10000 $0.56497	Buy Now
	IPD50P04P4L11	Cut Tape	2,500		1	1 $1.58 10 $1.069 100 $1.58 1000 $0.56497 10000 $0.56497	Buy Now

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IPD50 Datasheets (92)

Part	Manufacturer	Description	Datasheet Type	PDF
IPD5012-760	Inventus Power	Power Supplies - External/Internal (Off-Board) - AC DC Desktop, Wall Adapters - 50 WATT DESKTOP POWER SUPPLY 12V	Original	PDF
IPD5012-760S	Inventus Power	Power Supplies - External/Internal (Off-Board) - AC DC Desktop, Wall Adapters - AC/DC DESKTOP ADAPTER 12V 51W	Original	PDF
IPD5019-760	Inventus Power	Power Supplies - External/Internal (Off-Board) - AC DC Desktop, Wall Adapters - 50 WATT DESKTOP POWER SUPPLY 19V	Original	PDF
IPD5019-760S	Inventus Power	Power Supplies - External/Internal (Off-Board) - AC DC Desktop, Wall Adapters - AC/DC DESKTOP ADAPTER 19V 49.4W	Original	PDF
IPD5024-760	Inventus Power	Power Supplies - External/Internal (Off-Board) - AC DC Desktop, Wall Adapters - 50 WATT DESKTOP POWER SUPPLY 24V	Original	PDF
IPD5024-760S	Inventus Power	Power Supplies - External/Internal (Off-Board) - AC DC Desktop, Wall Adapters - AC/DC DESKTOP ADAPTER 24V 50.4W	Original	PDF
IPD50N03S2-07	Infineon Technologies	Single: N-Channel 30V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS ; V_DS (max): 30.0 V; R_{DS (on)} (max) (@10V): 7.3 mOhm; I_D (max): 50.0 A; R_thJC (max): 1.1 K/W;	Original	PDF
IPD50N03S207ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 50A TO252-3	Original	PDF
IPD50N03S2L-06	Infineon Technologies	Single: N-Channel 30V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS ; V_DS (max): 30.0 V; R_{DS (on)} (max) (@10V): 6.4 mOhm; I_D (max): 50.0 A; R_thJC (max): 1.1 K/W;	Original	PDF
IPD50N03S2L06ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 50A TO252-3	Original	PDF
IPD50N03S4L-06	Infineon Technologies	Single: N-Channel 30V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS -T2; V_DS (max): 30.0 V; R_{DS (on)} (max) (@10V): 5.5 mOhm; I_D (max): 50.0 A; R_thJC (max): 2.7 K/W;	Original	PDF
IPD50N03S4L06ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 50A TO252-3	Original	PDF
IPD50N04S3-08	Infineon Technologies	Single: N-Channel 40V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS -T; V_DS (max): 40.0 V; R_{DS (on)} (max) (@10V): 7.5 mOhm; I_D (max): 50.0 A; R_thJC (max): 2.2 K/W;	Original	PDF
IPD50N04S308ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 50A TO252-3	Original	PDF

IPD50N04S3-09	Infineon Technologies	Single: N-Channel 40V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS -T; V_DS (max): 40.0 V; R_{DS (on)} (max) (@10V): 9.0 mOhm; I_D (max): 50.0 A; R_thJC (max): 2.4 K/W;	Original	PDF
IPD50N04S309ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 50A TO252-3	Original	PDF
IPD50N04S4-08	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 50A TO252-3-313	Original	PDF
IPD50N04S408ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 50A TO252-3-313	Original	PDF
IPD50N04S4-10	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 50A TO252-3-313	Original	PDF
IPD50N04S410ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 50A TO252-3-313	Original	PDF

IPD50 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
g51 smd Abstract: 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPD50N06S3L-08 PG-TO252-3-11 3N06L08 g51 smd 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L
4N03L06 Abstract: smd diode 77a IPD50N03S4L-06 PG-TO252-3-11 Text: IPD50N03S4L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 5.5 mΩ ID 50 A PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)	Original	PDF	IPD50N03S4L-06 PG-TO252-3-11 4N03L06 4N03L06 smd diode 77a IPD50N03S4L-06 PG-TO252-3-11
3N06L06 Abstract: ANPS071E IPD50N06S3L-06 PG-TO252-3-11 Text: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPD50N06S3L-06 PG-TO252-3-11 3N06L06 3N06L06 ANPS071E IPD50N06S3L-06 PG-TO252-3-11
3N0607 Abstract: ANPS071E IPD50N06S3-07 PG-TO252-3-11 Text: IPD50N06S3-07 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.9 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPD50N06S3-07 PG-TO252-3-11 3N0607 3N0607 ANPS071E IPD50N06S3-07 PG-TO252-3-11
PN06L06 Abstract: No abstract text available Text: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPD50N06S3L-06 PG-TO252-3-11 PN06L06 PN06L06
Infineon 5R399P Abstract: 5r399p Infineon+5R399P Text: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.399 Ω 17 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant	Original	PDF	IPD50R399CP PG-TO252 IPD50R399CP PG-TO252 5R399P Infineon 5R399P 5r399p Infineon+5R399P
g51 smd Abstract: D60015 Text: IPD50N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 9.0 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPD50N06S3-09 PG-TO252-3-11 QN0609 g51 smd D60015
Untitled Abstract: No abstract text available Text: IPD50N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 9.0 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPD50N06S3-09 PG-TO252-3-11 QN0609
PN06L13 Abstract: Application Note ANPS071E PG-TO252-3-11 Diode d29 08 ANPS071E IPD50N06S3L-13 Text: IPD50N06S3L-13 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 13 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPD50N06S3L-13 PG-TO252-3-11 PN06L13 PN06L13 Application Note ANPS071E PG-TO252-3-11 Diode d29 08 ANPS071E IPD50N06S3L-13
4N03L06 Abstract: IPD50N03S4L-06 PG-TO252-3-11 J2009 smd diode 77a Text: IPD50N03S4L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 5.5 mW ID 50 A PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)	Original	PDF	IPD50N03S4L-06 PG-TO252-3-11 4N03L06 4N03L06 IPD50N03S4L-06 PG-TO252-3-11 J2009 smd diode 77a
4P04L11 Abstract: IPD50P04P4L-11 Text: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mΩ ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPD50P04P4L-11 PG-TO252-3-313 4P04L11 -10V1) -10V2) 4P04L11 IPD50P04P4L-11
PN03L06 Abstract: IPD50N03S2L-06 marking 113a ANPS071E PG-TO252-3-11 Text: IPD50N03S2L-06 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 6.4 mΩ ID 50 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11	Original	PDF	IPD50N03S2L-06 PG-TO252-3-11 PN03L06 PN03L06 IPD50N03S2L-06 marking 113a ANPS071E PG-TO252-3-11
diode AY 101 Abstract: IPD50R520CP Text: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V฀EL;HI฀<?=JG;฀E<฀C;G?I฀0IH฀M฀/Y V฀3BIG7฀BEL฀=7I;฀9>7G=; V"1฀9N\_Si // P R>M#a`$&_Si * /,* +- `= QY&ejb V฀#MIG;C;฀:K :I฀G7I;: V฀&?=>฀F;7A฀9JGG;DI฀97F78?B?IN	Original	PDF	IPD50R520CP 97F78 799EG: 87BB7HI diode AY 101 IPD50R520CP
4P04L11 Abstract: PG-TO252-3-313 IPD50P04P4L-11 IPD50p04 IPD50P04p4l11 IPD50P04P4L PG-TO252-3 IPD50 Text: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mW ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPD50P04P4L-11 PG-TO252-3-313 PG-TO252-3-313 4P04L11 -10V1) -10V2) 726-IPD50P04P4L-11 4P04L11 IPD50P04P4L-11 IPD50p04 IPD50P04p4l11 IPD50P04P4L PG-TO252-3 IPD50

4N0410 Abstract: IPD50N04S4-10 Text: IPD50N04S4-10 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 9.3 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)	Original	PDF	IPD50N04S4-10 PG-TO252-3-313 4N0410 4N0410 IPD50N04S4-10
PN06L13 Abstract: IPD50N06S2L-13 ANPS071E PG-TO252-3-11 Text: IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V DS • N-channel Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID V 12.7 mΩ 50 A • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPD50N06S2L-13 PG-TO252-3-11 PN06L13 PN06L13 IPD50N06S2L-13 ANPS071E PG-TO252-3-11
Untitled Abstract: No abstract text available Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPx50R3K0CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPD50R3K0CE,IPU50R3K0CE 1Description DPAK	Original	PDF	IPx50R3K0CE IPD50R3K0CE, IPU50R3K0CE
5r650ce Abstract: No abstract text available Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPD50R650CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPD50R650CE 1Description DPAK	Original	PDF	IPD50R650CE 5r650ce
Untitled Abstract: No abstract text available Text: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si // P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9	Original	PDF	IPD50R399CP
Untitled Abstract: No abstract text available Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPx50R1K4CE DataSheet Rev.2.2 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPD50R1K4CE,IPU50R1K4CE 1Description DPAK	Original	PDF	IPx50R1K4CE IPD50R1K4CE, IPU50R1K4CE
D70010 Abstract: No abstract text available Text: IPD50N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 9.0 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPD50N06S3-09 PG-TO252-3-11 QN0609 D70010
IPD50R520CP Abstract: 5r520p JESD22 5R52 DIODE D38 -06 Text: Type IPD50R520CP CoolMOSTM Power Transistor Product Summary Package • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.520 Ω 13 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant	Original	PDF	IPD50R520CP PG-TO252 5R520P IPD50R520CP 5r520p JESD22 5R52 DIODE D38 -06
JG Diode Abstract: diode EZD jg transistor T1027 f7 transistor MARKING 7C DIODE marking 7b PG-TO252-3 transistor 7g Text: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si // P R>M#a`$&_Si * /,* " +- `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9	Original	PDF	IPD50R520CP JG Diode diode EZD jg transistor T1027 f7 transistor MARKING 7C DIODE marking 7b PG-TO252-3 transistor 7g
5R520P Abstract: PG-TO-252-3-21 IPD50R520CP JESD22 Text: Type IPD50R520CP CoolMOSTM Power Transistor Product Summary Package • Lowest figure of merit RON x Qg • Ultra low gate charge VDS @Tjmax 550 V RDS on ,max 0.520 Ω 13 nC Qg,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant	Original	PDF	IPD50R520CP PG-TO252 5R520P 5R520P PG-TO-252-3-21 IPD50R520CP JESD22

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Infineon Technologies AG IPD50R380CEAUMA1

Infineon Technologies AG IPD50P04P413ATMA2

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Infineon Technologies AG IPD50N08S413ATMA1

UMW IPD50P04P4L11

IPD50 Datasheets (92)

IPD50 Datasheets Context Search

g51 smd

4N03L06

3N06L06

3N0607

PN06L06

Infineon 5R399P

g51 smd

Untitled

PN06L13

4N03L06

4P04L11

PN03L06

diode AY 101

4P04L11

4N0410

PN06L13

Untitled

5r650ce

Untitled

Untitled

D70010

IPD50R520CP

JG Diode

5R520P