g371
Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371
Text: HE D | MöSSMSa QGCHB'ìM 0 | INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International
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T-39-Ã
G-376
g371
IRFF330
IRFF331
IRFF332
IRFF333
510 MOSFET
EC07
CIRCUIT g371
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5S45S
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi
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IRFY9240CM
-200Volt,
5545S
DD24541
5S45S
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f422
Abstract: transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba
Text: HE D I 4055452 INTERNATIONAL 0001400 2 | Data Sheet No. PD-9.358E RECTIFIER INTERNATIONAL RECTIFIER TOR T-39-09 HEXFET TRANSISTORS IRFF4SQ IRFF421 N-CHANNEL POWER MOSFETs TO-3S PACKAGE Q [I IRFF4SS IRFF4S3 500 Volt, 3.0 Ohm HEXFET Features: T he HEXFET® technology is the key to International
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0GGci400
T-39-09
G-382
f422
transistor f422
tr f422
G-377
IRFF423
358E
IRFF420
IRFF421
IRFF422
420 Diode 2ba
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TR C458
Abstract: transistors c458 IRFP040 IRFP042 C458 C C459 TIL 220 L740 c458 c455
Text: INTERNATIONAL RECTIFIER INTERNATIONAL H E D I 4Ö55455 T-39-13 Data Sheet No. PD-9.463A RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I« R IRFP040 IRFPQ42 N-CHANNEL POWER MOSFETs TO-S47AC PACKAGE Product Summary 50 Volt, 0.028 Ohm, HEXFET TO-247AC TO-3P Plastic Package
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T-39-13
IRFP040
O-S47AC
O-247AC
05BVDSS
C-459
IRFP040,
IRFP042
T-39-13
C-460
TR C458
transistors c458
IRFP040
C458 C
C459
TIL 220
L740
c458
c455
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irf350
Abstract: 1RF35 2clg
Text: HE D I MflSS4S2 GQOTISE T | INTERNATIONAL RECTIFIER Data Sheet No. PD-9.304G T - lî z L l— INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRF3SO fo IRF351 IRF3SS IM - C h a n n e l IRF353 Features: 400 Volt, 0.3 Ohm HEXFET The HEXFET technology is the key to International
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IRF351
IRF353
G-134
irf350
1RF35
2clg
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dts200
Abstract: No abstract text available
Text: International IOR Rectifier Provisional Data Sheet No. PD-9.1547 HEXFET POWER MOSFET IRFN150 N -C H A N N E L Product Summary 100 Voit, 0.0600 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.The effi
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g598
Abstract: IRFH250 irfh260 A220 DLP 100-C 22E8 irfh25u 9411a G595
Text: HE 0 § Mfl554SE INTERNATIONAL 3 | Data Sheet No. PD-9.411A RECTIFIER I“ R INTERNATIONAL RECTIFIER T-39-13 HEXFET TRANSISTORS IRFHS50 N - C H A IN IIM E L M O S F E T s Features: 200 Volt, 0.090 Ohm HEXFET T he HEXFET® technology is the key to International
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s54s2
T-39-13
IRFH25Ã
G-597
IRFH250
G-598
g598
irfh260
A220 DLP
100-C
22E8
irfh25u
9411a
G595
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1546 International IQ R Rectifier HEXFET POWER MOSFET IRFN140 N -C H A N N E L Product Summary 100 Volt, 0.0770 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power M OSFET transistors.The effi
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1290B International ICR Rectifier HEXFET PO W ER M O S FE T IRFY340CM N-CHANNEL Product Summary 400 Volt, 0.55Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
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1290B
IRFY340CM
6C731
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IRF624
Abstract: No abstract text available
Text: H E 0 I 4 ÖS S 4 S 2 0G0ÜMÖL T-39-11 0 | Data Sheet No. PD-9.472A INTERNATIONAL RECTIFIER IOR INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG2 4 IRF6 S 5 IM-CHAIMNEI. 250 Volt, 1.1 Ohm HEXFET T0-220AB Plastic Package The HEXFET technology is the key to International Rec
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T-39-11
T0-220AB
C-239
IRF624,
IRF625
C-240
IRF624
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h253
Abstract: IRHM8450 T600 12 23 2N7270 IRHM7450 iA109 SN7570
Text: Data Sheet No. PD-9.673B INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRHM7450 IRHM8450 N-CHANNEL SN7S70 JANSRSN7570 JANSHSN7S70 _MEGA RAD HARD 500 Volt, 0.45Q, MEGA RAD HARD HEXFET International Rectifier’s M E G A RAD HARD Technology HEXFETs
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IRHM7450
IRHM8450
SN7570
JANSR2N7570
JANSHSN7S70
1x106
IRHM7450D
IRHM7450U
O-254
h253
IRHM8450
T600 12 23
2N7270
iA109
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2N7270
Abstract: diode t3d 44 s452 IRHM7450 IRHM8450 JANSH2N7270 H257 T3D 71 diode DIODE S3H Diode T3D 41 CIRCUIT
Text: Data Sheet No. PD-9.673B INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRHM7450 IRHM8450 N-CHANNEL 2N727G JANSRSN7S70 JANSHSN7S70 _ MEGA RAP HARD 500 Volt, 0.45Î2, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHM7450
IRHM8450
2N7270
JANSRSN7S70
JANSH2N7270
1x106
1x105
IRHM74500
IRHM7450U
diode t3d 44
s452
H257
T3D 71 diode
DIODE S3H
Diode T3D 41 CIRCUIT
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1438A International IOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM9064 REPETITIVE AVALANCHE AND P-CHANNEL RAD HARD Product Summary -60 Volt, 0.060£1, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology
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IRHM9064
4A554S2
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1293A International IGR Rectifier IRFY9130CM HEXFET9 POWER MOSFET P-CHANNEL -100 Volt, 0.3Q HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The effi
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IRFY9130CM
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I1092
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1289B International IOR Rectifier HEXFET PO W E R M O S F E T IR FY240C M N-CHANNEL Product Summary 200Volt, 0.18Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power M OSFET transistors. The effi
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1289B
FY240C
200Volt,
6C730
I1092
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PD9823
Abstract: u3g diode h243 h249
Text: Data Sheet No. PD-9.823A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7360 IRHM8360 N-CHANNEL MEGA RAD HARD 400 Vblt, 0.22 Q, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHM7360
IRHM8360
1X106
1x10s
H-249
IRHM7360,
IRHM8360
O-254
MIL-S-19500
H-250
PD9823
u3g diode
h243
h249
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irfae42
Abstract: JRFAE42
Text: he o I qassqsa oocnasq y | Data Sheet No. PD-9.579A INTERNATIONAL RECTIFIER T ^ T - fS ' INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED IRFAE40 IRFAE42 HEXFET TRANSISTORS N-CHANNEL 800 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package
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IRFAE40
IRFAE42
O-204AA
G-237
IRFAE40,
IRFAE42
S54S2
G-238
JRFAE42
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet No. PD-9.1400A International I R Rectifier R EPETITIVE AVALANCHE AND IRHY9130CM IRHY93130CM JANSR2N7382 JANSF2N7382 [REF: MIL'^ channel dv/dt RATED HEXFET TRANSISTOR RAD HARD -100Volt, 0.30Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technol
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-100Volt,
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED IRHE7S30 HEXFET TRANSISTORS IRHE8S30 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40i2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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IRHE7S30
IRHE8S30
1x105
1x106
H-109
IRHE7230,
IRHE8230
H-110
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til 31a
Abstract: h196 H199 IRHM7130 IRHM8130 EO 28b H202
Text: Data Sheet No. PD-9.707A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7130 o r IRHM8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHM7130
IRHM8130
1x105
T01ERANCING
IRHM7130D
IRHM7130U
O-254
MIL-S-19500
H-202
til 31a
h196
H199
IRHM7130
IRHM8130
EO 28b
H202
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til 31a
Abstract: IRHF7110 IRHF8110
Text: Data Sheet No. PD-9.671A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHF7110 o r IRHF8T10 J N-CHANNEL MEGA RAD HARD 100 Volt, 0.60C2, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHF7110
IRHF8110
IRHF8110
1x106
1x105
H-125
IRHF7110,
H-126
til 31a
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H-341
Abstract: No abstract text available
Text: Data Sheet No. PD-9.885 INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN915Q RAD HARD -100 Volt, 0.120 2, RAD HARD HEXFET Product Summary International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability
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IRHN915Q
1x105
MIL-STD-750,
-140A/jiS.
H-342
H-341
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h268
Abstract: H269
Text: Data Sheet No. PD-9.889 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM9150 RAD HARD -100 Volt, 0.120», RAD HARD HEXFET Product Summary International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and
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IRHM9150
1x105
1x1012
MIL-STD-750,
H-270
h268
H269
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HEXFETs FETs
Abstract: h184
Text: D a ta INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHG7HO N-CHANNEL RAD HARD 100 Volt, 0.700, RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown
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1x105
1x1012
H-184
IRHG7110
H-185
HEXFETs FETs
h184
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