HFA16TB60
Abstract: HFA20TB120 FA08TB60 hfa16tb60c HFA15TB60 Telex-95219
Text: International [ « ] Rectifier i r ylPPUCKTION NOTES PUBLISHED BY INTERNATIONAL RECTIFIER. 233 KANSAS STREET. EL SEGUNDO. CA 90245 310 322-3331 AN-993 Utilizing HEXFRED Ultra-Fast Recovery Diode Die In Assembly (HEXFRED is a trademark of International Rectifier)
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AN-993
HFA16TB60
HFA20TB120
FA08TB60
hfa16tb60c
HFA15TB60
Telex-95219
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86CNQ200
Abstract: No abstract text available
Text: bSE 1> INTERNATIONAL RECTIFIER 4Ö5545B QGl?bT 3?b PD-2.348 International e !Rectifier 86CNQ200 SCHOTTKY RECTIFIER 80 Amp Major Ratings and Characteristics Characteristics Description/Features 86CNQ200 Units The 86CNQ200, center tap Schottky rectifier module has
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5545B
86CNQ200
86CNQ200,
D-6380
86CNQ200
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E2733
Abstract: E2715
Text: INTERNATIONAL RECTIFIER SbE D m MfiSS45E 0010b47 fi B Selection Guide E1007F INTERNATIONAL RECTIFIER \ ïA> ENCAPSULATED BRIDGE RECTIFIERS INTERNATIONAL RECTIFIER EN C AP SU LA TED B R ID G E EbE D • 4B 55 4S 2 a010b4fi T ■ R E C T IF IE R S _
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MfiSS45E
0010b47
E1007F
a010b4fi
1DMB40,
26MB120A
KPBC13SB.
S-162
IL60067.
E2733
E2715
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D • MÔSSHSE QQ177bl Q6S * I N F PD-2.343 International [Ior| Rectifier mbr4045pt SCHOTTKY RECTIFIER 40 Amp Major Ratings and Characteristics Characteristics Description/Features MBR4045PT Units lF AV Rectangular waveform 40
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QQ177bl
4045pt
MBR4045PT
20Apk
TJ-125Â
O-247
475-18S7.
EW380
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10MF
Abstract: 10MF2 10MF2TR
Text: bSE D • MASSES? 00177Q3 MÔ3 H I N R Data Sheet No. PD-2.212 INTERNATIONAL RECTIFIER _ INTERNATIONAL RECTIFIER llO R l 10MFS 1 Amp Surface Mount Ultra Fast Recovery Rectifier Major Ratings and Characteristics Description/Features Units 'o 1.0 A @ Max.
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00177Q3
10MFS
D-6380
ASIA-190
10MF
10MF2
10MF2TR
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105 08049
Abstract: No abstract text available
Text: □BE D I 4 £155452 GGDflDMM 1 02E 08044 D 7 * - &3 INTERNATIONAL RECTIFIER Data Sheet No. PD-2.128 I«R INTERNATIONAL RECTIFIER R38BF SERIES 2000-1800 VOLTS RANGE REVERSE RECOVERY TIME 2.25//S 555 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES VOLTAGE RATINGS
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R38BF
25//S
R38BF18A.
4fl55452
D0-200AB
E1017
105 08049
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Untitled
Abstract: No abstract text available
Text: PD-9.1000 International j»g Rectifier IRF744 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer
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IRF744
O-220
D-6380
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1401 International Rectifier IRHY9230CM JANSR2N7383 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL RAD HARD -200 Volt, 0.8Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology
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IRHY9230CM
JANSR2N7383
MIL-PRF-19500/615]
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IR 50RIA120
Abstract: 50RIA5 HALF WAVE RECTIFIER CIRCUITS high speed FULL WAVE RECTIFIER CIRCUITS with scr A14U T30 rectifier 50RIA120 50RIA60 SCR 50RIA20 50RIA20
Text: INTERNATIONAL RECTIFIER 4ÖSS4S2 0G13M53 bT7 • INR STE D OCT 0 3 1990 Data Sheet No. PD-3.062B INTERNATIONAL RECTIFIER 50RIA SERIES 8 0 Amp RMS SCRs Description/Features Major Ratings and Characteristics This series of medium power thyristors is intended for
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0G13M53
50RIA
000V/MS
S-16212
IL60067.
NJ07650.
IR 50RIA120
50RIA5
HALF WAVE RECTIFIER CIRCUITS high speed
FULL WAVE RECTIFIER CIRCUITS with scr
A14U
T30 rectifier
50RIA120
50RIA60
SCR 50RIA20
50RIA20
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IR2113 APPLICATION NOTE
Abstract: IR2113 16 pin
Text: INTERNATIONAL RECTIFIER bSE î • 4Ö55M52 GCUÖ2G2 TET ■ INR Data Sheet No. PD-6.021 INTERNATIONAL. RECTIFIER HIGH VOLTAGE MOS GATE DRIVER IRS113 General Description Features The IR2113 is a high voltage, high speed MOSgated power device driver with independent high side
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55M52
IRS113
IR2113
D-6380
IR2113 APPLICATION NOTE
IR2113 16 pin
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Untitled
Abstract: No abstract text available
Text: 4BSS4S2 DD1S13D 131 • INR PD-9.738 International i»R Rectifier _IRFI634G HEXFET Pow er M O S F E T INTERNATIONAL RECTIFIER • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating
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DD1S13D
IRFI634G
O-220
M65S452
001513S
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ir21xx
Abstract: IR2125 kira 1N4107 1N4110
Text: International Hü] Rectifier D e sig n T ips DT 94-1A INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 KEEPING THE BOOTSTRAP CAPACITOR CHARGED IN BUCK CONVERTERS By Laszlo Kiraly
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IR2125.
1N4110
1N4107.
ir21xx
IR2125
kira
1N4107
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Untitled
Abstract: No abstract text available
Text: bSE D INTERNATIONAL RECTIFIER • MÖ55452 DG177SS flôl ■ INR PD-2.342 International B Rectifier HEXFRED Provisional Data Sheet HFA16TA60C u l t r a f a s t , s o f t RECOVERY DIODE 600V, 16A Major Ratings and Characteristics per Leg Characteristics
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DG177SS
HFA16TA60C
D-6380
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117 ajg
Abstract: 50WF10 50WF10F 50WF20 027B 50WF20F SS452
Text: INTERNATIONAL RECTIFIER bSE D • HflSSHSS □ G 1 7 b cìS Sfl7 HIINR Data Sheet No. PD-2.205 INTERNATIONAL. RECTIFIER IO R 50W F, 50W F-F SERIES 5 Amp Ultra Fast Recovery Rectifiers Description Major Ratings and Characteristics Characteristic 50WF, 50WF-F Units
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SS452
D17bciS
50WF-F
d4000
0041u
il00107.
07ss0.
04345s4.
117 ajg
50WF10
50WF10F
50WF20
027B
50WF20F
SS452
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Untitled
Abstract: No abstract text available
Text: bSE D INTERNATIONAL RECTIFIER • MflSSMSS 0017713 322 * I N R P D -2 .3 3 5 International S Rectifier HEXFRED Provisional Data Sheet HFA30TA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per diode C h a ra c te ris tic s 600 V
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HFA30TA60C
D-6380
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ci ir2110
Abstract: IR igbt gate driver ic dc control using ir2110 and mosfet 47N IGBT h bridge ir2110 IG8T IR2110 10DF6 IR211 IRGPC50F
Text: International Hü] Rectifier D e sig n T ips DT 92-3B INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 USING STANDARD CONTROL IC'S TO GENERATE NEGATIVE GATE BIAS FOR MOSFETS AND IGBTS
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92-3B
RH89BB,
Ligurla49
ci ir2110
IR igbt gate driver ic
dc control using ir2110 and mosfet
47N IGBT
h bridge ir2110
IG8T
IR2110
10DF6
IR211
IRGPC50F
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saa 7321
Abstract: No abstract text available
Text: International Rectifier Preliminary Data Sheet No. PD-9.1331 IR H M 7 1 6 0 IRHM 8I 6O REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTO R 10OVolt, 0.045Q, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail
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10OVolt,
saa 7321
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pj 68 SMD diode
Abstract: smd diode code pj 70 smd diode code pj smd diode code pj 50 smd diode code pj 24 st smd diode marking code smd marking code pj smd diode code pj 40 smd diode pj 55 smd diode code pj 65
Text: PD-9.1006 International S Rectifier IRF644S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third G eneration HEXFETs from International Rectifier provide the designer
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IRF644S
SMD-220
1018witty
47D1484.
pj 68 SMD diode
smd diode code pj 70
smd diode code pj
smd diode code pj 50
smd diode code pj 24
st smd diode marking code
smd marking code pj
smd diode code pj 40
smd diode pj 55
smd diode code pj 65
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transistors H128
Abstract: No abstract text available
Text: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER l l O R I AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS ;n N-CHANNEL IRHF7130 IRHFS13Q SN7S61 JANSRSN7S61 JANSH2N7S61 MEGA RAD HARD 100 Volt, 0.181], MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHF7130
IRHFS13Q
SN7S61
JANSRSN7S61
JANSH2N7S61
1x105
1x10s
H-137
IRHF7130,
IRHF8130,
transistors H128
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IRF734
Abstract: B49A L1029 IRF1010
Text: PD-9.999 International S Rectifier IRF734 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 450V R DS on = 1 lD = 4.9A Description Third Generation HEXFETs from International Rectifier provide the designer
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IRF734
O-220
D-6380
IRF734
B49A
L1029
IRF1010
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Untitled
Abstract: No abstract text available
Text: MASS4S2 0015232 International la g Rectifier PD-9.842 IRFI9Z34G INTERNATIONAL RECTIFIER HEXFET P ow er M O S FE T • • • • • • • 5 m INR Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel 175°C Operating Temperature
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IRFI9Z34G
1RF19Z34G
4A5S452
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IRF744
Abstract: application irf744 100-C IRF1010 Q-36
Text: PD-9.1000 International S Rectifier IRF744 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 450V ^DS on = 0 . 6 3 0 lD = 8.8A Description Third Generation HEXFETs from International Rectifier provide the designer
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IRF744
O-220
T0-220
O-220AB
D-6380
IRF744
application irf744
100-C
IRF1010
Q-36
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Untitled
Abstract: No abstract text available
Text: International US Rectifier Provisional Data Sheet No. FD 9.1273A IRHY7230CM IRHY8230CM HEXFET TRANSISTOR N-CHANNEL JAN5R2N7381 JANSH2N7381 R E F : M IL - S - 1 9 5 0 0 / 6 1 4 M EGA RAD HARD 200Volt, 0.4QQ, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs
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IRHY7230CM
IRHY8230CM
JAN5R2N7381
JANSH2N7381
200Volt,
1X105
1X106
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pj 69 diode
Abstract: FL014 RVM SOT223 FL014 Example mosfet SOT-223 marking code IOR b41 sot223 Ir314 pj 66 diode ON52 AN-994
Text: International S Rectifier PD 9.1298 IRLL1905 PRELIMINARY HEXFET Power MOSFET • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling V dss = 55V f^DS on = 0.30Q Id = 1.6A D escription Fourth Generation HEXFETs from International Rectifier utilize advanced
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IRLL1905
OT-223
pj 69 diode
FL014
RVM SOT223
FL014 Example
mosfet SOT-223 marking code IOR
b41 sot223
Ir314
pj 66 diode
ON52
AN-994
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