Untitled
Abstract: No abstract text available
Text: Agilent Radiometrically Tested AlInGaP II LED Lamps for Sensor-Based Applications Data Sheet SunPower Series Precision Optical Performance HLMP-ED80-xxxxx Description Radiometrically Tested Precision Optical Performance AlInGaP II aluminum indium gallium
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HLMP-ED80-xxxxx
5989-2895EN
5989-4366EN
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LPD200P70-2
Abstract: LPD200-P70-2 LPD200P70 LPD200-P70-1 LPD200 MIL-HDBK-263 maximum idss transistor Indium LPD200-P70
Text: LPD200P70 PACKAGED HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 16 dB Small Signal Gain at 2 GHz ♦ 0.8 dB Noise Figure at 2 GHz • DESCRIPTION AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
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LPD200P70
LPD200P70
LPD200
MIL-STD-1686
MIL-HDBK-263.
LPD200P70-2
LPD200-P70-2
LPD200-P70-1
MIL-HDBK-263
maximum idss transistor
Indium
LPD200-P70
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Untitled
Abstract: No abstract text available
Text: VISIBLE LED LAMPS Super flux Page 1 of 1 SMx28W series Package Features 0.76 ±0.1 x 0.4 ±0.2 2.5 1.55 ±0.2 CATHODE High luminous output through Indium technology 7.62 ±0.5 Wide viewing angle ø3.0 ±0.2 5.08 ±0.3 0.5 Water clear lens 5.08 1.9 7.62 ±0.5
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SMx28W
100mA
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MVL-904UYL
Abstract: DSA003696
Text: Super Flux LEDS MVL-904UYL Description Package Dimensions Unit: mm inches The MVL-904UYL , utilizes the latest absorbing subsstrate aluminum indium gallium phosphide AlInGap LED technology. This LED material has outstanding light output efficiency over a wide range of drive current. The package
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MVL-904UYL
MVL-904UYL
DSA003696
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circuit diagram of moving LED message display
Abstract: MVL-663UOLK-S
Text: ELLIPSE 4.7 X 5.7 High Performance AllnGaP LED Lamps MVL-663UOLK-S Description Package Dimensions The MVL-663UOLK-S , utilizes the latest absorbing Unit: mm ( inches ) φ4.70 (.191) substrate Aluminum Indium Gallium Phosphide 4.7 (.191) (AllnGaP) LED technology. This LED material
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MVL-663UOLK-S
circuit diagram of moving LED message display
MVL-663UOLK-S
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MVL-914UYL
Abstract: MVL-914UYLK DSA003696
Text: Super Flux LEDS MVL-914UYL Description Package Dimensions Unit: mm inches The MVL-914UYLK , utilizes the latest absorbing subsstrate aluminum indium gallium phosphide AlInGap LED technology. This LED material has outstanding light output efficiency over a wide range of drive current. The package
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MVL-914UYL
MVL-914UYLK
MVL-914UYL
MVL-914UYLK
DSA003696
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MVL-504UOL
Abstract: No abstract text available
Text: T-1 3/4 5mm PACKAGE HIGH POWER AlInGaP LED LAMPs Description MVL-504UOL Package Dimensions The MVL-504UOL utilizes the latest absorbing Unit: mm ( inches ) φ5.05 (.200) substrate Aluminum Indium Gallium Phosphide (AlInGaP) LED technology. This LED material
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MVL-504UOL
MVL-504UOL
12mil
54TYP.
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J23-5I-R02M-2
Abstract: J23TE2-66G-R01M-2 50E-12 39E-15 56E-11 21E12 18E-14 13E12 56E14 J22-18I-R40U
Text: Indium Gallium Arsenide Detectors ISO 9001 Certified Distributor: LASER COMPONENTS GmbH, Germany, Phone: +49 0 8142 28640, E-Mail: [email protected] J22 and J23 Detector Operating Notes (0.8 to 2.6 µm) General The J22 and J23 series are high performance InGaAs detectors
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D-82140
J23-5I-R02M-2
J23TE2-66G-R01M-2
50E-12
39E-15
56E-11
21E12
18E-14
13E12
56E14
J22-18I-R40U
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J23-5I-R02M-2
Abstract: J23TE2-66C-R02M-2 39E-15 J22-5I-R02M J22-18i-R01M
Text: Indium Gallium Arsenide Detectors Judson Technologies LLC 221 Commerce Drive Montgomeryville, PA 18936 USA Tel: 215-368-6900 Fax: 215-362-6107 Visit us on the web. ISO 9001 Certified www.judsontechnologies.com J22 and J23 Detector Operating Notes 0.8 to 2.6 µm
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HSMA-C197
Abstract: AV01-0520EN HSMC-C197
Text: HSMx-C120, HSMx-C177, HSMx-C197 and HSMx-C265 High Performance Chip LEDs Data Sheet Description Features These chip type LEDs utilize Aluminium Indium Galium Phosphide AlInGaP material technology. The AlInGaP material has a very high luminous efficiency, capable of
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HSMx-C120,
HSMx-C177,
HSMx-C197
HSMx-C265
HSMx-C177/C197)
HSMx-C120)
HSMx-C265)
AV01-0520EN
AV02-0975EN
HSMA-C197
HSMC-C197
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MVL-534UYL
Abstract: No abstract text available
Text: T-1 3/4 φ5mm High Performance AllnGaP LED Lamps Description MVL-534UYL Package Dimensions The MVL-534UYL , utilizes the latest absorbing φ5.05 (.200) substrate Aluminum Indium Gallium Phosphide Unit: mm ( inches ) (AllnGaP) LED technology. This LED material
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MVL-534UYL
00MIN.
54TYP.
MVL-534UYL
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MVL-663TUYLK-S
Abstract: No abstract text available
Text: ELLIPSE 4.7 X 5.7 High Performance AllnGaP LED Lamps Description MVL-663TUYLK-S Package Dimensions The MVL-663TUYLK-S, utilizes the latest transparent Unit: mm ( inches ) φ4.70 (.191) substrate Aluminum Indium Gallium Phosphide 4.7 (.191) (AllnGaP) LED technology. This LED material
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MVL-663TUYLK-S
MVL-663TUYLK-S,
00MIN.
54TYP.
MVL-663TUYLK-S
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Untitled
Abstract: No abstract text available
Text: [CQ-2235] CQ-2235 High-Speed Small Current Sensor 1. Genaral Description CQ-2235 is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional to the AC/DC current. Quantum well ultra-thin film InAs Indium Arsenide is used as the Hall sensor,
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CQ-2235]
CQ-2235
CQ-2235
MS1569-E-01
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Untitled
Abstract: No abstract text available
Text: [CQ-2334] CQ-2334 High-Speed Small Current Sensor 1. Genaral Description CQ-2334 is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional to the AC/DC current. Quantum well ultra-thin film InAs Indium Arsenide is used as the Hall sensor,
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CQ-2334]
CQ-2334
CQ-2334
MS1573-E-01
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785nm
Abstract: LD chip optical discs United Epitaxy Company
Text: UEL-H78 國 聯 光 電 科 技 United Epitaxy Company, Ltd. Preliminary Product Description: Essential: 780nm Laser Chip AlGaInP/GaAs MOVPE Process Strained MQW UEL-H78 is a 780nm infrared high power LD chip fabricated from aluminum gallium indium phosphide AlGaInP
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UEL-H78
780nm
UEL-H78
500um
785nm
300um
300um
LD chip
optical discs
United Epitaxy Company
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12065A104JAT2A
Abstract: F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E
Text: Freescale Semiconductor Technical Data MMG2401 Rev. 0, 11/2004 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • •
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MMG2401
MMG2401R2
12065A104JAT2A
F QFN 3X3
020C
JESD22
MMG2401
MMG2401R2
A114-G
12065A105JAT2A
156 qfn
TRANSISTOR A114 E
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MVL-514UYL
Abstract: No abstract text available
Text: T-1 3/4 φ 5mm High Performance AllnGaP LED Lamps Description MVL-514UYL Package Dimensions Unit: mm ( inches ) The MVL-514UYL , utilizes the latest absorbing substrate aluminum indium gallium phosphide (AllnGaP) LED technology. This LED material has outstanding light output efficiency over
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MVL-514UYL
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MVL-504UOL
Abstract: No abstract text available
Text: T-1 3/4 φ 5mm PACKAGE HIGH POWER AlInGaP LED LAMPs Description MVL-504UOL Package Dimensions Unit: mm ( inches ) The MVL-504UOL utilizes the latest absorbing substrate Aluminum Indium Gallium Phosphide (AlInGaP) LED technology. This LED material has outstanding light output efficiency over a
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MVL-504UOL
MVL-504UOL
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Untitled
Abstract: No abstract text available
Text: Agilent HSMx-C110/170/190/C191/C150 High Performance ChipLED Data Sheet HSMA-C110/C170/C190/C191/C150 HSML-C110/C170/C190/C191/C150 HSMC-C110/C170/C190/C191/C150 HSMZ-C110/C170/C190 Description These chip-type LEDs utilize Aluminum Indium Gallium Phosphide
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HSMx-C110/170/190/C191/C150
HSMA-C110/C170/C190/C191/C150
HSML-C110/C170/C190/C191/C150
HSMC-C110/C170/C190/C191/C150
HSMZ-C110/C170/C190
HSMx-C170/C190/C191/C150)
5988-0493EN
5988-1977EN
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Untitled
Abstract: No abstract text available
Text: Agilent HSMx-C110/170/190/C191/C150 High Performance ChipLED Data Sheet HSMA-C110/C170/C190/C191/C150 HSML-C110/C170/C190/C191/C150 HSMC-C110/C170/C190/C191/C150 HSMZ-C110/C170/C190 Description These chip-type LEDs utilize Aluminum Indium Gallium Phosphide
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HSMx-C110/170/190/C191/C150
HSMA-C110/C170/C190/C191/C150
HSML-C110/C170/C190/C191/C150
HSMC-C110/C170/C190/C191/C150
HSMZ-C110/C170/C190
HSMx-C170/C190/C191/C150)
5980-1043E
5988-0493EN
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Untitled
Abstract: No abstract text available
Text: Agilent Precision Optical Performance AlInGaP II LED Lamps Data Sheet HLMP-ELxx HLMP-EHxx HLMP-EDxx Description Precision Optical Performance AlInGaP II aluminum indium gallium phosphide LEDs offer superior light output for excellent readability in sunlight
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T-13/4
5989-0661EN
5989-2896EN
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Model 430
Abstract: SH-430
Text: 16 Indium Antimonide SH Series Hall Sensors Description The SH series Hall effect sensors are four terminal Indium Antimonide devices that are extremely sensitive to low magnetic fields. These devices produce an output voltage, Vh, proportional to the product of the input current, Ic, and the magnetic flux density, B.
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SH-400
SH-410
SH-420
SH-430
550mm
100mm)
700mm)
000mm)
Model 430
SH-430
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LED traffic light signs
Abstract: LED traffic light signs technical data LED traffic light vms LED traffic light Hewlett-Packard amber LED chips
Text: hH Projection of Long Term Light Output Performance for AS AlInGaP LED Technology Application Brief I-007 Long Term Light Output Performance is Different than MTBF The long term reliability of AS AlInGaP absorbing substrate, aluminum-indium-gallium-phosphide LEDs is an important
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I-007
5964-6228E
LED traffic light signs
LED traffic light signs technical data
LED traffic light
vms LED traffic light
Hewlett-Packard amber LED chips
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J12TE4-3CN-R01M
Abstract: J12TE3-66D-R01M HgCdTe J12TE2-66D-R02M J12TE1-37S-R01M J12-18C J12TE3-66D-R250U judson PA-9 J12TE3 J12TE2-66D-R01M
Text: J}^EGsG JUDSON Indium Arsenide Detector Operating Notes 1.0 to 3.8 ¡am General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.8 |am wavelength range. The equivalent circuit is a photon
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J12TE2-66S
J12TE3-66S
J12TE4-3CN-R01M
J12TE3-66D-R01M
HgCdTe
J12TE2-66D-R02M
J12TE1-37S-R01M
J12-18C
J12TE3-66D-R250U
judson PA-9
J12TE3
J12TE2-66D-R01M
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