IEGT 2100
Abstract: IEGT ARF672 Ansaldo SPA
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF672
IEGT 2100
IEGT
ARF672
Ansaldo SPA
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IEGT
Abstract: ARF670 1370a
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF670
IEGT
ARF670
1370a
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IEGT
Abstract: ARF695
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF695
IEGT
ARF695
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MG800FXF1US53
Abstract: IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT MG800FXF MG800FX TOSHIBA IGBT DATA BOOK
Text: MG800FXF1US53 TOSHIBA GTR Module Silicon N-Channel IEGT MG800FXF1US53 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C E E G E Maximum Ratings Ta = 25°C
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MG800FXF1US53
MG800FXF1US53
IEGT
TOSHIBA IEGT
TOSHIBA SILICON N-CHANNEL IEGT
MG800FXF
MG800FX
TOSHIBA IGBT DATA BOOK
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IEGT
Abstract: TOSHIBA IEGT MG400FXF2YS53 TOSHIBA SILICON N-CHANNEL IEGT IEGT toshiba TOSHIBA IEGT diode 4 kw Toshiba AC motor MG400FXF VARISTOR k275
Text: MG400FXF2YS53 TOSHIBA GTR Module Silicon N-Channel IEGT MG400FXF2YS53 High Power Switching Applications Motor Control Applications Features High input impedance Enhancement mode Electrodes are isolated from case. Equivalent Circuit E1 C2 E1 C2 G1 G2 IEGT 2
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MG400FXF2YS53
IEGT
TOSHIBA IEGT
MG400FXF2YS53
TOSHIBA SILICON N-CHANNEL IEGT
IEGT toshiba
TOSHIBA IEGT diode
4 kw Toshiba AC motor
MG400FXF
VARISTOR k275
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ARF673
Abstract: v990a
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF673
ARF673
v990a
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V435A
Abstract: ARF462
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF462
V435A
ARF462
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IEGT
Abstract: ARF794HT
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF794HT
IEGT
ARF794HT
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IEGT
Abstract: TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 Transistor Silicon N Channel IEGT 39tf Induction Heating Resonant Inverter
Text: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 µs typ. (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)
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GT40Q321
IEGT
TOSHIBA IEGT
TOSHIBA SILICON N-CHANNEL IEGT
GT40Q321
Transistor Silicon N Channel IEGT
39tf
Induction Heating Resonant Inverter
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IEGT
Abstract: TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51
Text: 2003-12 News New Product Guide 3.3 kV IEGT Module Switching devices for inverter equipment used to drive large motors, such as rail car, locomotive, and steel production, and to construct power transmission and distribution systems have been changing from Thyristors to high voltage power transistors, which are capable of faster switching.
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BEE0030A
IEGT
TOSHIBA IEGT
MG1200FXF1US53
MG400FXF2YS53
MG800FXF1US53
MG800FXF
toshiba gto
IEGT toshiba
MG800FX
MG1200FXF1US51
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ST2100GXH22A
Abstract: TOSHIBA IEGT nikkei S-200 TOSHIBA IEGT 4500V ST1500GXH22 1000GXHH25 IEGT 4500V TOSHIBA SILICON N-CHANNEL IEGT IEGT nikkei S200
Text: TOSHIBA ST2100GXH22A TOSHIBA SILICON N-CHANNEL IEGT TENTATIVE DATA ST2100GXH22A HIGH POWER SWITCHING APPRICATIONs MOTOR CONTROL APPRICATIONs ・Enhancement Mode. ・Double side cooling type EQUIVALENT CIRCUIT Ｃ Ｅ Ｅ Ｇ MAXIMUM RATINGS (Ta=25degC) ITEMs
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ST2100GXH22A
25degC)
ST2100GXH22A
TOSHIBA IEGT
nikkei S-200
TOSHIBA IEGT 4500V
ST1500GXH22
1000GXHH25
IEGT 4500V
TOSHIBA SILICON N-CHANNEL IEGT
IEGT
nikkei S200
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MG1200FXF1US53
Abstract: IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT 800 kw Toshiba AC motor IEGT toshiba
Text: MG1200FXF1US53 TOSHIBA GTR Module Silicon N-Channel IEGT MG1200FXF1US53 High Power Switching Applications Motor Control Applications Features High input impedance Enhancement mode Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings Ta = 25°C
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MG1200FXF1US53
MG1200FXF1US53
IEGT
TOSHIBA IEGT
TOSHIBA SILICON N-CHANNEL IEGT
800 kw Toshiba AC motor
IEGT toshiba
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nikkei S-200
Abstract: TOSHIBA IEGT IEGT 4500V ST1500GXH22 TOSHIBA IEGT 4500V IEGT nikkei S200 IEGT 4500V 1500A ST1500GXH22 IEGT ST1500GXH
Text: TOSHIBA ST1500GXH22 TOSHIBA SILICON N-CHANNEL IEGT TENTATIVE DATA ST1500GXH22 HIGH POWER SWITCHING APPRICATIONs MOTOR CONTROL APPRICATIONs ・Enhancement Mode. ・Double side cooling type EQUIVALENT CIRCUIT Ｃ Ｅ Ｅ Ｇ MAXIMUM RATINGS (Ta=25degC) ITEMs
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ST1500GXH22
25degC)
10ms-Halransportation
nikkei S-200
TOSHIBA IEGT
IEGT 4500V
ST1500GXH22
TOSHIBA IEGT 4500V
IEGT
nikkei S200
IEGT 4500V 1500A
ST1500GXH22 IEGT
ST1500GXH
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TOSHIBA IEGT
Abstract: IGBT GT40Q321 with IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 TOSHIBA IEGT diode
Text: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 s typ. (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)
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GT40Q321
TOSHIBA IEGT
IGBT GT40Q321 with
IEGT
TOSHIBA SILICON N-CHANNEL IEGT
GT40Q321
TOSHIBA IEGT diode
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IEGT
Abstract: ARF794LT
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF794LT
IEGT
ARF794LT
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IEGT
Abstract: ARF694 igbt 3 KA C645A
Text: POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - Fax + 39 010 8681180 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF694
IEGT
ARF694
igbt 3 KA
C645A
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TOSHIBA IEGT
Abstract: Toshiba injection
Text: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 µs typ. (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)
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GT40Q321
TOSHIBA IEGT
Toshiba injection
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ARF360
Abstract: No abstract text available
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF360
ARF360
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IEGT 2100
Abstract: ARF671 IEGT Ansaldo SPA IEGT 1500 IGBT I
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF671
IEGT 2100
ARF671
IEGT
Ansaldo SPA
IEGT 1500
IGBT I
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IEGT
Abstract: ARF664
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF664
IEGT
ARF664
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IEGT
Abstract: TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321
Text: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • The 5th generation · Enhancement-mode · High speed : tf = 0.41 µs typ. (IC = 40A) · Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)
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GT40Q321
IEGT
TOSHIBA IEGT
TOSHIBA SILICON N-CHANNEL IEGT
GT40Q321
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IEGT
Abstract: Ansaldo Trasporti ARF360 ARF462 ARF664 ARF671 ARF672 ARF673 ARF681 ARF694
Text: FAST RECOVERY DIODES FOR IGBT's, IEGT's AND GTC's APPLICATIONS -Snubberless operation -Low losses -Improved recovery softness Tj blocking voltage current Vdc link forward voltage VT0 ANSALDO rt di/dt Irr Qrr case type Tjmax Tjmax Tjmax Tjmax [A] 180 [uC] 80
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ARF360
ARF664
ARF462
ARF671
ARF681
ARF771
IEGT
Ansaldo Trasporti
ARF360
ARF462
ARF664
ARF671
ARF672
ARF673
ARF681
ARF694
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IEGT
Abstract: 500A1000 ARF681
Text: POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - Fax + 39 010 8681180 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation ARF681 FAST RECOVERY DIODE FOR IGBT, IEGT, GCT APPLICATIONS
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ARF681
IEGT
500A1000
ARF681
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BD139 N
Abstract: BD 139 BD139 NPN BD140 BD135 BD136
Text: S C S -T H O M S O N M im [iEgTO *S BD135 BD137/BD139 NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD 135, BD 137 and BD 139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers
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BD135
BD137/BD139
OT-32
BD136
BD138
BD140.
BD135
BD137
BD139
BD139 N
BD 139
BD139 NPN
BD140
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