mallory 150 series
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
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Inte153
MRF20030R
mallory 150 series
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BD136
Abstract: MJD47 MRF20030R
Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
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MRF20030R/D
MRF20030R
BD136
MJD47
MRF20030R
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Motorola 946
Abstract: MRF2003 BD136 MJD47 MRF20030R RF amplifier mtbf
Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
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MRF20030R/D
MRF20030R
Motorola 946
MRF2003
BD136
MJD47
MRF20030R
RF amplifier mtbf
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Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class AB amplifier
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MRF20030R/D
MRF20030R
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RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
Abstract: MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030
Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
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MRF20030/D
MRF20030
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
MOTOROLA TRANSISTOR 935
BD136
bd136 transistor
10J capacitor
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
transistor NPN 30 watt
BD135
MJD47
MRF20030
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BD135
Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
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MRF20030/D
MRF20030
BD135
BD136
MJD47
MRF20030
RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ
MOTOROLA 727
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diode t25 4 L5
Abstract: celeron 600 mobile MOTHERBOARD CIRCUIT diagram agtl manual mobile 478 SOCKET PIN LAYOUT
Text: R Mobile Intel Celeron® Processor 0.18µ in Micro-FCBGA and Micro-FCPGA Packages at 933 MHz, 866 MHz, 800A MHz, and 733 MHz Datasheet October 2001 Order Number: 298514-001 ® ® Mobile Intel Celeron Processor (0.18µ) in Micro-FCBGA and Micro-FCPGA Packages
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UPC8128TB
Abstract: UPC8151TB UPC8151TB-E3-A UPC8152TB
Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V Tuned at 1 GHz
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UPC8151TB
UPC8151TB;
OT-363
UPC8128TB
UPC8151TB
UPC8151TB-E3-A
UPC8152TB
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RH80536
Abstract: RJ80536 910GM Micro-FCPGA
Text: R Mobile Intel Celeron® Processor 0.18µ in Micro-FCBGA and Micro-FCPGA Packages at 933 MHz, 866 MHz, 800A MHz, and 733 MHz Datasheet October 2001 Order Number: 298514-001 ® ® Mobile Intel Celeron Processor (0.18µ) in Micro-FCBGA and Micro-FCPGA Packages
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i7-2630QM/i7-2635QM,
i7-2670QM/i72675QM,
i5-2430M/i5-2435M,
i5-2410M/i5-2415M.
ucts/27146/Intel-Celeron-M-Processor-380-
06-Sep-2011
RH80536
RJ80536
910GM
Micro-FCPGA
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NX8570SD
Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Text: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
NX8570SD
409d
766d
ETALON
362d
TLD 521
315D
346D
377D
967D
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1583 Series
Abstract: 362d 766d
Text: LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571
1583 Series
362d
766d
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ci 7445
Abstract: ibm usa 2001 P6 MOTHERBOARD ibm usa 2001 P6 MOTHERBOARD SERVICE MANUAL Ibm 865 MOTHERBOARD pcb CIRCUIT diagram ic 7455
Text: Advance Information MPC7455EC Rev. 4, 9/2003 MPC7455 RISC Microprocessor Hardware Specifications The MPC7455 and MPC7445 are implementations of the PowerPC microprocessor family of reduced instruction set computer RISC microprocessors. This document is primarily
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MPC7455EC
MPC7455
MPC7445
MPC7455;
MPC7445.
MPC7455.
MPC7450
MPC7400,
MPC7410,
ci 7445
ibm usa 2001 P6 MOTHERBOARD
ibm usa 2001 P6 MOTHERBOARD SERVICE MANUAL
Ibm 865 MOTHERBOARD pcb CIRCUIT diagram
ic 7455
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bc 945
Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Text: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549
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O-92-GehÃ
BC238
BC309
O-126
OT-32.
O-220-A.
OT-78
T0-220-B.
bc 945
BC 945 p
BC 948
BC 937
BD 139 N
ic 933 bd
BD135N
bu110
bd 3055
bd135
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bdw 93
Abstract: No abstract text available
Text: NPN SILICON POWER DARLINGTON BDW93 SERIES • 80 W at 25 °C Case Temperature • 12 A Rated Collector Current • Min hpg of 750 @ 5 A /3 V mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted BDW 93 BD W 93A BDW 93B
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BDW93
bdw 93
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HN3C14F
Abstract: No abstract text available
Text: HN3C14F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 14 F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO v EBO ic Ib MARKING
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HN3C14F
HN3C14F
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HN3C14
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.2 2.8 -0 .3 Including Two Devices in SM6 Super Mini Type with 6 Leads t-0.2 - EE MAXIMUM RATINGS (Ta = 25°C)
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HN3C14F
HN3C14
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rohm mtbf
Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this
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1S211
1S22I
MRF20030
rohm mtbf
kermet case b
bd136 equivalent
933 TRANSISTOR
SILICON PNP POWER TRANSISTOR b 861
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DBT134
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this
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MRF20030R/D
DBT134
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zt158
Abstract: BD 149 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030 RF Pow er Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this
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IS22I
MRF20030
zt158
BD 149 transistor
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BFR96
Abstract: BFR96 philips Transistor 933 Transistor s44 transistor bfr96 transistorbfr96
Text: Philips Semiconductors Product specification - 3 /- . Z 3 NPN 5 GHz wideband transistor DESCRIPTION 711002b 004577b 1A7 • P H I N 5bE D PHILIPS INTERNATIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as
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ON4487)
BFQ32.
BFR96
711DflSb
r-31-23
711Dfl2b
BFR96
BFR96 philips
Transistor 933
Transistor s44
transistor bfr96
transistorbfr96
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VA-PC 10
Abstract: rf DIRECT with qpsk modulation AN6494NSA B3255
Text: Panasonic Mobile Communication AN6494NSA Digital Communication Orthogonal Modulator IC • Overview The AN6494NSA is an orthogonal modulator 1C for dig ital cellular telephones. It incorporates a phase shifter and an APC circuit for indirect modulation in the 1.5GHz
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AN6494NSA
AN6494NSA
65dBc
13dBm
178MHz
SSOPOI6-P-0225A
32flS2
D0132EM
VA-PC 10
rf DIRECT with qpsk modulation
B3255
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Untitled
Abstract: No abstract text available
Text: Panasonic Mobile Communication AN6494NSA Digital Communication Orthogonal Modulator 1C • Overview The AN6494NSA is an orthogonal modulator 1C for dig ital cellular telephones. It incorporates a phase shifter and an APC circuit for indirect modulation In the 1.5GHz
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AN6494NSA
AN6494NSA
65dBc
13dBm
178MHz
l78MHZ,
20dBm
1619MHZ,
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40107
Abstract: 40107B BM025 hcg resistor
Text: n n r w u r s fi b U o / H lu o INTEGRATED CIRCUIT s-thohson 07C t I 7=i23a_3j?_npisg5s_5_ hcc/hcfwbi 1 _ 14iC09116 S SEMICONDUCTOR CORP J o '1r9-Z-2.i 7929225 S G DUAL 2-INPUT NAND BUFFER/DRIVER • 32 T IM E S S T A N D A R D B - S E R IE S O U T P U T C U R R E N T D R IV E S IN K IN G C A P A B IL IT Y -136 mA
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4iC09116
S-3398
40107
40107B
BM025
hcg resistor
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4069U8
Abstract: 40107B 40107 dc motor 5v 2watt IC 2030 schematic diagram HCF40107 S-3411 s3411
Text: nnrwur s fi s - t h o h s o n 07C t I 7=i23a_3j?_npisg5s_5_ b U o /H lu o 1 INTEGRATED CIRCUIT hcc/hcfwbi J _ 14iC 09116 S G S SEMICONDUCTOR CORP o '1 r 9 - Z - 2 .i 7929225 DUAL 2-INPUT NAND BUFFER/DRIVER • • • • • • 32 TIMES STANDARD B-SERIES OUTPUT CURRENT DR IVE SINKING C A PAB ILITY -136 mA
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40107B
I/4HCC/HCF400IAE
2HCC/HCF40107B
4069U8
40107B
40107
dc motor 5v 2watt
IC 2030 schematic diagram
HCF40107
S-3411
s3411
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