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    IB 100MA NPN Search Results

    IB 100MA NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    IB 100MA NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D2150

    Abstract: D2150 s BTD2150A3 NPN transistor ECB TO-92 500ma 1A
    Text: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA


    Original     		PDF C848A3 BTD2150A3 100mA BTB1424A3 UL94V-0 D2150 D2150 s BTD2150A3 NPN transistor ECB TO-92 500ma 1A

    D2150

    Abstract: NPN transistor ECB TO-92 PT10m BTD2150A3
    Text: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2006.03.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA


    Original     		PDF C848A3 BTD2150A3 100mA BTB1424A3 UL94V-0 D2150 NPN transistor ECB TO-92 PT10m BTD2150A3

    N02 Transistor

    Abstract: N02 npn DN050S DP050S N02 MARKING N02
    Text: DN050S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.07V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP050S • Switching Application.


    Original     		PDF DN050S 100mA/10mA) DP050S OT-23F KST-2115-000 100mA 500mA 100mA, N02 Transistor N02 npn DN050S DP050S N02 MARKING N02

    DN030

    Abstract: Transistor DP030
    Text: DN030 Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030 • Switching Application


    Original     		PDF DN030 100mA/10mA) DP030 DNO30 KST-9082-000 100mA 300mA 100mA, DN030 Transistor DP030

    DN030U

    Abstract: DP030U Transistor N01 marking
    Text: DN030U Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030U • Switching Application


    Original     		PDF DN030U 100mA/10mA) DP030U OT-323F KST-3054-000 100mA 300mA 100mA, DN030U DP030U Transistor N01 marking

    N01 marking

    Abstract: T 2109 DN030S DP030S
    Text: DN030S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030S • Switching Application


    Original     		PDF DN030S 100mA/10mA) DP030S OT-23F KST-2109-000 100mA 300mA 100mA, N01 marking T 2109 DN030S DP030S

    DN030E

    Abstract: Transistor IC 4009 DATASHEET Datasheet ic 4009 4009 kst40 4009 be 4009 NOT GATE IC in 4009 N01 marking
    Text: DN030E Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030E • Switching Application


    Original     		PDF DN030E 100mA/10mA) DP030E OT-523F KST-4009-000 100mA 300mA 100mA, DN030E Transistor IC 4009 DATASHEET Datasheet ic 4009 4009 kst40 4009 be 4009 NOT GATE IC in 4009 N01 marking

    DN050

    Abstract: DP050
    Text: DN050 Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.07V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP050 • Switching Application.


    Original     		PDF DN050 100mA/10mA) DP050 KST-9083-000 100mA 500mA 100mA, DN050 DP050

    2SCR542P

    Abstract: No abstract text available
    Text: Midium Power Transistors 30V / 5A 2SCR542P  Dimensions (Unit : mm)  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) (1) (2) (3) 2) High speed switching


    Original     		PDF 2SCR542P 100mA) R0039A 2SCR542P

    DN030U

    Abstract: DP030U
    Text: DN030U NPN Silicon Transistor Features PIN Connection • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030U • Switching Application


    Original     		PDF DN030U 100mA/10mA) DP030U OT-323 OT-323F KSD-T5D007-000 DN030U DP030U

    DN030S

    Abstract: DP030S N01 MARKING CODE marking N01
    Text: DN030S NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030S • Switching Application PIN Connection


    Original     		PDF DN030S 100mA/10mA) DP030S OT-23F KSD-T5C008-000 DN030S DP030S N01 MARKING CODE marking N01

    DN050S

    Abstract: DP050S
    Text: DN050S NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.07V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP050S • Switching Application. PIN Connection


    Original     		PDF DN050S 100mA/10mA) DP050S OT-23F KSD-T5C073-000 DN050S DP050S

    2SCR542P

    Abstract: T100
    Text: Midium Power Transistors 30V / 5A 2SCR542P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) (1) 2) High speed switching  Applications


    Original     		PDF 2SCR542P 100mA) R0039A 2SCR542P T100

    TS13002 TRANSISTOR

    Abstract: 400V 100MA NPN TS13002 TS13002CT
    Text: TS13002 High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 0.2A Pin assignment: 1. Emitter 2. Collector 3. Base Features VCE SAT , = 0.5V @ Ic / Ib = 100mA / 10mA Ordering Information High voltage. Part No. High speed switching Structure Silicon triple diffused type.


    Original     		PDF TS13002 100mA TS13002CT 100mA, 125ohm TS13002 TRANSISTOR 400V 100MA NPN TS13002

    DN050

    Abstract: DP050
    Text: DN050 NPN Silicon Transistor PIN Connection C E B B • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.07V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP050 • Switching Application.


    Original     		PDF DN050 100mA/10mA) DP050 KSD-T0A036-000 DN050 DP050

    DN030

    Abstract: DP030
    Text: DN030 NPN Silicon Transistor PIN Connection C E B B • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030 • Switching Application


    Original     		PDF DN030 100mA/10mA) DP030 DNO30 KSD-T0A002-000 DN030 DP030

    Untitled

    Abstract: No abstract text available
    Text: 2SCR543R Datasheet NPN 3.0A 50V Middle Power Transistor lOutline Parameter Value VCEO IC 50V 3.0A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR543R 3) Low VCE sat) VCE(sat)=0.35V(Max.) (IC/IB=2A/100mA)


    Original     		PDF 2SCR543R 2SAR543R A/100mA) SC-96) R1102A

    ztx341

    Abstract: Vce-80V
    Text: ZTX341 140 0.16 120 hFE - Gain % VCE(sat) - Volts IC/IB=10 0.12 0.10 0.08 0.06 C B 100 80 ABSOLUTE MAXIMUM RATINGS. 100µA 1mA 10mA 100mA 10µA 100µA 1mA IC IC hFE v IC VCE(sat) v IC 10mA 100mA E E-Line TO92 Compatible 60 40 20 0.04 0.02 10µA ZTX341 ISSUE 2 – MARCH 94


    Original     		PDF ZTX341 100mA 60MHz ztx341 Vce-80V

    sot-23 Marking Lf

    Abstract: transistor marking LF sot-23 sot-23 Marking LG marking NF sot-23 transistor marking LF SOT-23 lf
    Text: 2SC3052 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SC3052 OT-23 100mA 100mA, sot-23 Marking Lf transistor marking LF sot-23 sot-23 Marking LG marking NF sot-23 transistor marking LF SOT-23 lf

    18BSC

    Abstract: TSB1412 TSD2118 TSD2118CP
    Text: TSD2118 Low Vcesat NPN Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 50V BVCEO 20V IC 5A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.35 @ IC / IB = 4A / 100mA (Typ.) Complementary part with TSB1412


    Original     		PDF TSD2118 O-252 100mA TSB1412 TSD2118CP 18BSC TSB1412 TSD2118

    2sc3052

    Abstract: sot-23 Marking LG
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain


    Original     		PDF OT-23 OT-23 2SC3052 100mA 100mA, 2sc3052 sot-23 Marking LG

    A08 transistor

    Abstract: No abstract text available
    Text: TSD965A Low Vcesat NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics


    Original     		PDF TSD965A 100mA TSD965ACT A08 transistor

    transistor E11

    Abstract: No abstract text available
    Text: TSD1858 Low Vcesat NPN Transistor TO-251 IPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 180V BVCEO 160V IC 1.5A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.) High BVCEO Part No.


    Original     		PDF TSD1858 O-251 100mA TSD1858CH 75pcs transistor E11

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain


    Original     		PDF OT-23 OT-23 2SC3052 100mA 100mA,