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    I428 Search Results

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    I428 Price and Stock

    Alpha & Omega Semiconductor AOI4286

    MOSFET N-CH 100V 4A/14A TO251A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AOI4286 Tube 10,073 1
    • 1 $0.77
    • 10 $0.77
    • 100 $0.374
    • 1000 $0.27582
    • 10000 $0.21238
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    TME AOI4286 89 1
    • 1 $0.598
    • 10 $0.216
    • 100 $0.193
    • 1000 $0.174
    • 10000 $0.174
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    E-Z LOK HI-428-WH

    THREAD INSERT 0.34"DIA X 0.50"H
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HI-428-WH Bag 2,444 1
    • 1 $0.4
    • 10 $0.4
    • 100 $0.3436
    • 1000 $0.3436
    • 10000 $0.3436
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    Vishay Siliconix SI4286DY-T1-GE3

    MOSFET 2N-CH 40V 7A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4286DY-T1-GE3 Cut Tape
    • 1 -
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    SI4286DY-T1-GE3 Digi-Reel 1
    • 1 $0.64
    • 10 $0.64
    • 100 $0.64
    • 1000 $0.64
    • 10000 $0.64
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    SI4286DY-T1-GE3 Reel
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    Vishay Siliconix SI4288DY-T1-GE3

    MOSFET 2N-CH 40V 9.2A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4288DY-T1-GE3 Reel 2,500
    • 1 -
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    • 10000 $0.54256
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    RS SI4288DY-T1-GE3 Bulk 2,500
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    • 10000 $1.28
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    ES Components SI4288DY-T1-GE3
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    Vishay Intertechnologies SI4288DY-T1-GE3

    DUAL N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SI4288DY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4288DY-T1-GE3 Reel 7,500 8 Weeks 2,500
    • 1 -
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    • 10000 $0.5
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    SI4288DY-T1-GE3 Ammo Pack 7 Weeks, 4 Days 1
    • 1 $1.33
    • 10 $1.05
    • 100 $0.849
    • 1000 $0.849
    • 10000 $0.849
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    Mouser Electronics SI4288DY-T1-GE3 14,289
    • 1 $1.43
    • 10 $1.09
    • 100 $0.83
    • 1000 $0.603
    • 10000 $0.5
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    Newark SI4288DY-T1-GE3 Reel 20,000 2,500
    • 1 -
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    • 1000 -
    • 10000 $0.617
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    SI4288DY-T1-GE3 Cut Tape 1,708 1
    • 1 $0.471
    • 10 $0.471
    • 100 $0.471
    • 1000 $0.471
    • 10000 $0.471
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    TTI SI4288DY-T1-GE3 Reel 2,500 2,500
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    • 10000 $0.5
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    TME SI4288DY-T1-GE3 4,612 1
    • 1 $1.26
    • 10 $1.12
    • 100 $0.9
    • 1000 $0.83
    • 10000 $0.83
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    Avnet Asia SI4288DY-T1-GE3 10 Weeks 2,500
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    EBV Elektronik SI4288DY-T1-GE3 9 Weeks 2,500
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    I428 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    r9824

    Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
    Text: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16


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    PDF 1/10W XW9902 XC9901 50R28 U9500 XW9903 25MIL 10MIL R9915 r9824 R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523

    IRF5505

    Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
    Text: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT


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    PDF TEST10 TEST11 CS8406 RA300 RA302 1/16W IRF5505 C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi

    APPLE A6 CHIP

    Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
    Text: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6


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    PDF RF420 CF414 1/16W RF424 APPLE A6 CHIP cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342

    IRLM2402

    Abstract: c4977 cf325 NEC c5292 VD357 C5292 nec NEC "C4305" cf406 C4934 C5248
    Text: 8 6 7 2 3 4 5 CK APPD FINO M23 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 19 397409 ENGINEERING RELEASED


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    PDF RF420 CF414 1/16W RF424 IRLM2402 c4977 cf325 NEC c5292 VD357 C5292 nec NEC "C4305" cf406 C4934 C5248

    SMC1602

    Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
    Text: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3


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    PDF CS8406 RA300 RA302 1/16W SMC1602 SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900

    ISL9504

    Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
    Text: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


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    PDF 03/19/m 100-ohm 95-ohms ISL10 ISL11 ISL9504 j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H

    ISL6258

    Abstract: Diode C1280 c1295 battery C2240 3A967 820-2179 U4900 u3150 OZ9956 g5551
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN SCHEM,MLB,M82 PVT 11/14/2007 ENG APPD DESCRIPTION OF CHANGE DATE DATE


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    PDF

    cf325

    Abstract: Broadcom EMI NEC c5292 UE401 c5885 CF-325 CE015 CF219 I1016 C1900 PCB
    Text: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS 2 System Block Diagram FINO-M23 08/26/2005 4 Power Block Diagram FINO-M23 08/26/2005 5 Table Items FINO-M23 10/07/2005 6 FUNC TEST 1 OF 2 FINO-M23 08/26/2005 7 POWER CONN / ALIAS M33-PC 06/20/2005 8


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    PDF RF420 CF414 1/16W RF424 cf325 Broadcom EMI NEC c5292 UE401 c5885 CF-325 CE015 CF219 I1016 C1900 PCB

    R9810

    Abstract: HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335
    Text: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 B 1 2 3 4 6 7 8 9 10 11 13* 14 16 17 18 21* 22


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    PDF 1/10W XW9902 XC9901 50R28 U9500 XW9903 25MIL 10MIL R9915 R9810 HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    Diode SMD ED 9C

    Abstract: FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428
    Text: IQR IRFN Series Devices IRFN Series Data Sheet alph abetical order. W h e re the inform ation is d evice specific, w e h ave assig n ed a n um eric c h a ra cte r for the graph type and an alph a c h a ra c te r to a given device. S e e T a b le A b elo w . W h e re graphs are


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    PDF I-445 Diode SMD ED 9C FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428

    i424

    Abstract: 4455C i428
    Text: PA R T No. No. OF DIM n. 'A ' CKTS. ENG No. DIM n. 'B ' 3 8 - 0 0 - I422 AE-4455C-2CAA 2 2 .5 4 / .I00 -I423 -3CAA 3 (5 .0 8 )/ .2 0 0 (7 .5 2 )/.2 9 6 - I424 -4CAA 4 (7 .6 2 )/.3 0 0 ( I0 .0 6 Í/.3 9 6 ( I2.601/.496 DEPTH. (4 .9 8 )/. I96 -I425 -5CAA


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    PDF AE-4455C-2CAA i424 4455C i428

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    MC 1466 L

    Abstract: i424 WI450 S0MC20
    Text: GENERAL SPECIFICATIONS High AC and Surge Currents All Tantalum Construction Of Constiuent Units Operating Temperature: -55°C to +125°C Voltage Range: 6 to 125 VDC Capacitance Range: 230 to 7500 ju.F Ripple Current: Max at 85°C, 40kHz up to 11.7A rms, dependent on C/V rating


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    PDF TypeW14 40kHz 75/iA I47500M 0006M 146000MOO10MB 145000M 0010MB 14340OM0015MB 142800M0025MB MC 1466 L i424 WI450 S0MC20