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    D004 power ic

    Abstract: 72B4
    Text: > « Y U N D A I H Y ? 1 „D lDA 1 2 B K X B - b lt .S e r i e s CM OS SRAM PRELIMINARY DESCRIPTION The HY6ZB100A is a h ig h -s p e e d , law p o w s r an d 131,072 x B-bils CMOS s tatic RAM fabricated using Hyundai's h ig h p e rfo rm a n c e twin lu b CMOS p ro c e s s te c h n o lo g y . This high reliability p ro c e s s c uup lB d with in novativB circuit


    OCR Scan     		PDF HY6ZB100A HY62B1D0A 050fl| 1DD02-11-MAYS4 HY62B1DDA HY62B100ALP HY5201DOALLP HYS281DOAG HYB281D0ALG HY62B1DCALLG D004 power ic 72B4

    5331m

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 52 B1 OOA-I S e rie s 1 2 0 K Jl B - b l t CM D 5 SRAM PRELIMINARY DESCRIPTION The HYB2B1DOA-I is a high-speed, low power and 131,D72 a B-bils CMOS static RAM fabricated using Hyundai's high pBrform anca twin tub CMOS process technology. This high reliability process couplBd with Innovative circuit


    OCR Scan     		PDF HY52B1 HY62B1 002IQ 1DD03-11-MAYB4 HY52B1D HY62B1DOALP-I HY6ZB100ALLP-I HY52B1DOALG-I HY52B1DOALLG-I HY62B1DOALTM 5331m