TOSHIBA RF Power Module S-AV24
Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106DAD1
3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
TOSHIBA RF Power Module S-AV24
diode varicap BB 112
varicap v147
2SC386A
2SK1310
3SK78
2sc5066
V101 varicap diode
1SV149
2SK192
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3SK73
Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106DAD1
3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
3SK73
S-AV24
3SK121
3SK114
TOSHIBA RF Power Module S-AV24
3SK101
S-AU82VL
diode varicap BB 112
2SC2328
3SK112
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transistor 2SC5066
Abstract: 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450
Text: Cross Reference RF Product Cross Reference Tachyonics THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z THN4201E THN4201KF THN4201U THN4301E THN4301KF THN4301U THN4501E THN4501KF THN4501U THN6201E THN6201KF THN6201S THN6201U
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THN5601B
THN5702F
THN6601B
THN6701B
THN405Z
THN420Z
THN450Z
THN520Z
THN620Z
THN640Z
transistor 2SC5066
2sc5066
2SC5067
BFP620
UPC2709
2SC5066 data sheet
thn6601b
2SC5066 datasheet
NESG260234
BFP450
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BB 505 Varicap Diode
Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
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3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
S-AV26H
BB 505 Varicap Diode
s-av24
V101 varicap diode
varicap v101
varicap v147
varicap v103
replacement for 2sc5088 horizontal transistors
TOSHIBA S-AV29H
Zener c9v
3SK114
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FET K161
Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
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3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
S-AV26H
FET K161
S-AV24
k192a
Transistor C1923
C1923 transistor
k161 jfet
fet k241
k161 mosfet
C1923 transistor base
c2498 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: TO SHIBA HN3C10F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 OF Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS h0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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HN3C10F
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TENTATIVE HN3C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C10FT V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1
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HN3C10FT
2SC5086
203C10FT
1000MHz
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Untitled
Abstract: No abstract text available
Text: TO SHIBA HN3C10FT TENTATIVE TOSHIBA TRANSISTOR H M • ■ m 'm SILICON NPN EPITAXIAL PLANAR TYPE i f HF l n F T■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 ±0.1 • TW O devices are built in to the super-thin and ultra super 1.25 ± 0.1
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HN3C10FT
500MHz
--20mA,
1000MGHz
1000MHz
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE HN3C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 -1
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HN3C10FT
2SC5086
500MHz
1000M
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C10FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6pins package : ES6 O o p MOUNTED DEVICES Q1/Q2
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HN3C10FE
2SC5086
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C10FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6pins package : ES6 O o p MOUNTED DEVICES Q1/Q2
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HN3C10FE
2SC5086
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2SC5086
Abstract: HN3C10FE
Text: TOSHIBA HN3C10FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFE Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6pins package : ES6 p: 6 o o o p MOUNTED DEVICES
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HN3C10FE
2SC5086
2SC5086
HN3C10FE
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HN3C10FU
Abstract: No abstract text available
Text: TOSHIBA HN3C10FU T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C10FU V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS Unit in mm 2.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads ± 0.1 M A X IM U M RATINGS (Ta = 25°C)
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HN3C10FU
HN3C10FU
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2SC5086
Abstract: HN3C10FT
Text: TO SH IBA TENTATIVE HN3C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C10FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1
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HN3C10FT
2SC5086
2SC5086
HN3C10FT
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C10F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 OF Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • h0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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HN3C10F
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HN3C10FU
Abstract: No abstract text available
Text: TO SH IBA HN3C10FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL
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HN3C10FU
HN3C10FU
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HN3C10F
Abstract: No abstract text available
Text: TO SHIBA HN3C10F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 OF Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • + 0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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HN3C10F
HN3C10F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C10FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C10FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN3C10FU
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transistor marking c3n
Abstract: No abstract text available
Text: TOSHIBA HN3C10F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 HF • ■ 'm ■ mmr ■ U nit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN3C10F
transistor marking c3n
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Untitled
Abstract: No abstract text available
Text: HN3C10FU TOSHIBA TOSHIBA TRANSISTOR h SILICON NPN EPITAXIAL PLANAR TYPE N3 r 1 nFh VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC
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HN3C10FU
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marking IAY
Abstract: HN3C10F
Text: HN3C10F TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 OF Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • + 0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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HN3C10F
marking IAY
HN3C10F
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Untitled
Abstract: No abstract text available
Text: TO SHIBA HN3C10FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C1OFU Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN3C10FU
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Untitled
Abstract: No abstract text available
Text: TO SHIBA HN3C10FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C1OFU Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN3C10FU
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2SC5086
Abstract: HN3C10FT
Text: TO SH IBA TENTATIVE HN3C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C10FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1
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HN3C10FT
2SC5086
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