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Catalog Datasheet	MFG & Type	Document Tags	PDF
HMF2402 Abstract: HMF-2400 hmf 2402 hmf-2402 power transistor gaas hmf2400 Text: HARRIS m SEMICONDUCTOR r V T? D ^ \| 4 3 D a E b ci 0000035 ' T ' S I ~ * L 5 \| HMF-2400 POWER GaAs FET — * 2-14 GHz 6.0dB Gain N O V EM B ER 1987 J PRODUCT DATA HARRIS MICROWAVE SEMICONDUCTOR FEATURES DEVICE OUTLINE +30.5dBm Typical Linear Power □ High Efficiency Performance, 30%	OCR Scan	HMF-2400 9-24000-B® HMF2402 hmf 2402 hmf-2402 power transistor gaas hmf2400	PDF
HMF-24000-200 Abstract: No abstract text available Text: HARRIS ¿ 2 flu S E M I C O N D U C T O R H A R R I S 4bE » • 43022^ OOGQlfll □ « H M S H MF-2 4 0 0 G 100 -2 0 0 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +30.5 dBm Output Power -200 with 5.5 dB Associated Gain at 8 GHz • Large Cross Section Ti/Pt/Au Gates	OCR Scan	Optimiz80 HMF-24000-200	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC J*j HARRIS LOE D • 7 ^ 4 1 4 2 GGllflMb E3G ■ SHGK HMF-24000 100 -,200 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +30.5 dBm Output Power -200 with 5.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates	OCR Scan	HMF-24000 Th680	PDF
hmf-2402 Abstract: hmf-24 HMF24020-200 Text: SAMSUNG ELECTRONICS INC HARRIS büE D 7^4142 D011Ö63 IGfi HMF-24020 -200 Power Optimized GaAs FET 2-12 GHz PRODUCT DATA Features • +30.5 dBm Output Power with 5 dB Associated Gain at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers • Power Optimized Design Provides	OCR Scan	HMF-24020 F-24020-200 HMF24000-200. hmf-2402 hmf-24 HMF24020-200	PDF
HMF24020-200 Abstract: F24000 hmf-2402 harris 723 HMF-24020 Text: 4bE D HARRIS Mil SEMICONDUCTOR HARRIS • 000052^ 5 ■ HMS HMF-24020 Power Optimized GaAs FET PRODUCT DATA 2 -1 2 GHz Features * +30.5 dBm Output Power with 5 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers	OCR Scan	HMF-24020 F-24020-200 F24000-200. HMF24020-200 F24000 hmf-2402 harris 723 HMF-24020	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC ÍE H A R R IS 7TbmM2 DOiiaab t i ? bOE HMF-24030 -200 Power Optimized GaAs FET 2-10 GHz PRODUCT DATA Features • +30.5 dBm Output Power with 5 dB Associated Gain at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers	OCR Scan	HMF-24030 HMF-24030-200 HMF24000-200. HMF-24030-200	PDF
hmf-24 Abstract: No abstract text available Text: HARRIS 33 H NW S E M I C O N D U C T O R a r r is 4bE D • M B O S S b 11! 0 0 0 0 2 3 3 4 ■ H M F-24030 00 Power Optimized GaAs FET 2-10 GHz PRODUCT DATA Features < +30.5 dBm Output Power with 5 dB Associated Gain at 8 GHz • Chip Devices are Selected from	OCR Scan	F-24030 HMF-24030-200 HMF24000-200. 430EEbT D00053S HMF-24030-200 hmf-24	PDF