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    Hitachi Ltd HM5225805BTTAGPC100

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    Elpida Memory Inc HM5225805BTT-75

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    HM5225805BTT Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HM5225805BTT Hitachi Semiconductor 256M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword x 8-bit x 4-bank Original PDF
    HM5225805BTT-75 Elpida Memory 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 16-bit x 4-bank/8-Mword x 8-bit x 4-bank /16-Mword x 4-bit x 4-bank PC/133, PC/100 SDRAM Original PDF
    HM5225805BTT-75 Renesas Technology 256M LVTTL interface SDRAM Original PDF
    HM5225805BTT-A6 Elpida Memory 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 16-bit x 4-bank/8-Mword x 8-bit x 4-bank /16-Mword x 4-bit x 4-bank PC/133, PC/100 SDRAM Original PDF
    HM5225805BTT-A6 Renesas Technology 256M LVTTL interface SDRAM Original PDF
    HM5225805BTT-B6 Elpida Memory 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 16-bit x 4-bank/8-Mword x 8-bit x 4-bank /16-Mword x 4-bit x 4-bank PC/133, PC/100 SDRAM Original PDF
    HM5225805BTT-B6 Renesas Technology 256M LVTTL interface SDRAM Original PDF

    HM5225805BTT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ADJ-203-581A

    Abstract: Hitachi DSA00176
    Text: HB52RF648DC-B, HB52RD648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword x 64-bit, 133/100 MHz Memory Bus, 2-Bank Module 16 pcs of 64 M × 4 components PC133/100 SDRAM ADJ-203-581A (Z) 暫定仕様 Rev. 0.1 ’00. 10. 20 概要 HB52RF648DC，HB52RD648DC は，256M ビット SDRAM HM5225805BTT/BLTT（TSOP パッケージ）を


    Original     		PDF HB52RF648DC-B, HB52RD648DC-B 64-Mword 64-bit, PC133/100 ADJ-203-581A HB52RF648DCHB52RD648DC HM5225805BTT/BLTTTSOP ADJ-203-581A Hitachi DSA00176

    HM5225405B-75

    Abstract: pec 730 ic LK 1628 Hitachi CS 45 EM Hitachi DSA00164 Nippon capacitors
    Text: HB52E648EN-A6B/B6B, HB52E649EN-A6B/B6B 512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E648EN 64-Mword x 64-bit, 2-Bank Module (16 pcs of 32 M × 8 Components) (HB52E649EN) 64-Mword × 72-bit, 2-Bank Module (18 pcs of 32 M × 8 Components) PC100 SDRAM


    Original     		PDF HB52E648EN-A6B/B6B, HB52E649EN-A6B/B6B HB52E648EN) 64-Mword 64-bit, HB52E649EN) 72-bit, PC100 ADE-203-1116A HM5225405B-75 pec 730 ic LK 1628 Hitachi CS 45 EM Hitachi DSA00164 Nippon capacitors

    el 1533

    Abstract: pec 730 Hitachi CS 45 EM Hitachi DSA00174 Nippon capacitors
    Text: HB52E648EN-A6B/B6B, HB52E649EN-A6B/B6B 512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E648EN 64-Mword x 64-bit, 2-Bank Module (16 pcs of 32 M × 8 Components) (HB52E649EN) 64-Mword × 72-bit, 2-Bank Module (18 pcs of 32 M × 8 Components) PC100 SDRAM


    Original     		PDF HB52E648EN-A6B/B6B, HB52E649EN-A6B/B6B HB52E648EN) 64-Mword 64-bit, HB52E649EN) 72-bit, PC100 ADE-203-1116A el 1533 pec 730 Hitachi CS 45 EM Hitachi DSA00174 Nippon capacitors

    HM5225405BTT-A6

    Abstract: HM5225165B
    Text: EO HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 L 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM Pr Description E0082H10 1st edition (Previous ADE-203-1073B (Z)


    Original     		PDF HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 Hz/100 16-bit /16-Mword PC/133, PC/100 E0082H10 ADE-203-1073B HM5225405BTT-A6 HM5225165B

    HM5225405BTT-75

    Abstract: HM5225405BTT-A6 HM5225165BLTT-A6 Hitachi DSA00167
    Text: HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM ADJ-203-462A Z ’99. 11. 25 暫定仕様 Rev. 0.1


    Original     		PDF HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 Hz/100 16-bit /16-Mword PC/133, PC/100 ADJ-203-462A HM5225165B HM5225405BTT-75 HM5225405BTT-A6 HM5225165BLTT-A6 Hitachi DSA00167

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 256MB Unbuffered SDRAM DIMM HB52E328EM-A6B, -B6B 32M words x 64 bits, 1 bank HB52E329EM-A6B, -B6B (32M words × 72 bits, 1 bank) Description The HB52E328EM and HB52E329EM belong to 8-byte DIMM (Dual In-line Memory Module) family, and have been developed as an optimized main memory solution


    Original     		PDF 256MB HB52E328EM-A6B, HB52E329EM-A6B, HB52E328EM HB52E329EM HM5225805BTT) E0185H10

    Untitled

    Abstract: No abstract text available
    Text: HB52F648EN-75B, HB52F649EN-75B 512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus HB52F648EN 64-Mword x 64-bit, 2-Bank Module (16 pcs of 32 M × 8 Components) (HB52F649EN) 64-Mword × 72-bit, 2-Bank Module (18 pcs of 32 M × 8 Components) PC133 SDRAM E0012H10 (1st edition)


    Original     		PDF HB52F648EN-75B, HB52F649EN-75B HB52F648EN) 64-Mword 64-bit, HB52F649EN) 72-bit, PC133 E0012H10

    HM5225405BTT-75

    Abstract: HITACHI HX 2272 HM5225405BTT-A6 HM5225165BTTA 2272 decoder Hitachi DSA00164
    Text: HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-1073A Z Preliminary Rev. 0.1 Nov. 25, 1999


    Original     		PDF HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 Hz/100 16-bit /16-Mword PC/133, PC/100 ADE-203-1073A HM5225165B HM5225405BTT-75 HITACHI HX 2272 HM5225405BTT-A6 HM5225165BTTA 2272 decoder Hitachi DSA00164

    HM5225805BTT

    Abstract: 649E
    Text: HB52E648EN-A6B/B6B, HB52E649EN-A6B/B6B 512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E648EN 64-Mword x 64-bit, 2-Bank Module (16 pcs of 32 M × 8 Components) (HB52E649EN) 64-Mword × 72-bit, 2-Bank Module (18 pcs of 32 M × 8 Components) PC100 SDRAM


    Original     		PDF HB52E648EN-A6B/B6B, HB52E649EN-A6B/B6B HB52E648EN) 64-Mword 64-bit, HB52E649EN) 72-bit, PC100 E0013H10 HM5225805BTT 649E

    HM5225805BTT

    Abstract: HB52E328EM-B6
    Text: DATA SHEET 256MB Unbuffered SDRAM DIMM HB52E328EM-A6B, -B6B 32M words x 64 bits, 1 bank HB52E329EM-A6B, -B6B (32M words × 72 bits, 1 bank) Description The HB52E328EM and HB52E329EM belong to 8-byte DIMM (Dual In-line Memory Module) family, and have been developed as an optimized main memory solution


    Original     		PDF 256MB HB52E328EM-A6B, HB52E329EM-A6B, HB52E328EM HB52E329EM HM5225805BTT) E0185H10 HM5225805BTT HB52E328EM-B6

    HM5225405BTT-75

    Abstract: Hitachi DSA002745
    Text: HM5225165B-75/A6/B6, HM5225805B-75/A6/B6, HM5225405B-75/A6/B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword ¥ 16-bit ¥ 4-bank/8-Mword ¥ 8-bit ¥ 4-bank /16-Mword ¥ 4-bit ¥ 4-bank PC/133, PC/100 SDRAM ADE-203-1073 Z Preliminary Rev. 0.0 Jun. 14, 1999


    Original     		PDF HM5225165B-75/A6/B6, HM5225805B-75/A6/B6, HM5225405B-75/A6/B6 Hz/100 16-bit /16-Mword PC/133, PC/100 ADE-203-1073 HM5225165B HM5225405BTT-75 Hitachi DSA002745

    HM5225405BTT-75

    Abstract: No abstract text available
    Text: HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM E0082H10 1st edition (Previous ADE-203-1073B (Z)


    Original     		PDF HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 Hz/100 16-bit /16-Mword PC/133, PC/100 E0082H10 ADE-203-1073B HM5225405BTT-75

    HM5225805BTT

    Abstract: No abstract text available
    Text: DATA SHEET 256MB Unbuffered SDRAM DIMM HB52F328EM-75B 32M words x 64 bits, 1 bank HB52F329EM-75B (32M words × 72 bits, 1 bank) Description The HB52F328EM and HB52F329EM belong to 8-byte DIMM (Dual In-line Memory Module) family, and have been developed as an optimized main memory solution


    Original     		PDF 256MB HB52F328EM-75B HB52F329EM-75B HB52F328EM HB52F329EM HM5225805BTT) E0184H10 HM5225805BTT

    Hitachi DSA00174

    Abstract: Nippon capacitors
    Text: HB52F648EN-75B, HB52F649EN-75B 512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus HB52F648EN 64-Mword x 64-bit, 2-Bank Module (16 pcs of 32 M × 8 Components) (HB52F649EN) 64-Mword × 72-bit, 2-Bank Module (18 pcs of 32 M × 8 Components) PC133 SDRAM ADE-203-1115A (Z)


    Original     		PDF HB52F648EN-75B, HB52F649EN-75B HB52F648EN) 64-Mword 64-bit, HB52F649EN) 72-bit, PC133 ADE-203-1115A Hitachi DSA00174 Nippon capacitors

    PC133 registered reference design

    Abstract: 512MB 8Mx32 DDR DRAM HM5225645FBP Hitachi DSA002714
    Text: HM5225645F-B60 HM5225325F-B60 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit × 4-bank/2-Mword × 32-bit × 4-bank PC/100 SDRAM ADE-203-1014C Z Rev. 1.0 Oct. 1, 1999 Description The Hitachi HM5225645F is a 256-Mbit SDRAM organized as 1048576-word × 64-bit × 4-bank. The Hitachi


    Original     		PDF HM5225645F-B60 HM5225325F-B60 64-bit 32-bit PC/100 ADE-203-1014C HM5225645F 256-Mbit 1048576-word PC133 registered reference design 512MB 8Mx32 DDR DRAM HM5225645FBP Hitachi DSA002714

    Hitachi DSA00276

    Abstract: Nippon capacitors
    Text: HB52RF648DC-B, HB52RD648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword x 64-bit, 133/100 MHz Memory Bus, 2-Bank Module 16 pcs of 64 M × 4 components PC133/100 SDRAM ADE-203-1214A (Z) Preliminary Rev. 0.1 Oct. 20, 2000 Description The HB52RF648DC, HB52RD648DC are a 32M × 64 × 2 banks Synchronous Dynamic RAM Small Outline


    Original     		PDF HB52RF648DC-B, HB52RD648DC-B 64-Mword 64-bit, PC133/100 ADE-203-1214A HB52RF648DC, HB52RD648DC 256-Mbit HM5225805BTT/BLTT) Hitachi DSA00276 Nippon capacitors

    1115A

    Abstract: HB52F648EN-75B HB52F649EN-75B HM5225805BTT PC133-SDRAM
    Text: HB52F648EN-75B, HB52F649EN-75B 512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus HB52F648EN 64-Mword x 64-bit, 2-Bank Module (16 pcs of 32 M × 8 Components) (HB52F649EN) 64-Mword × 72-bit, 2-Bank Module (18 pcs of 32 M × 8 Components) PC133 SDRAM E0012H10 (1st edition)


    Original     		PDF HB52F648EN-75B, HB52F649EN-75B HB52F648EN) 64-Mword 64-bit, HB52F649EN) 72-bit, PC133 E0012H10 1115A HB52F648EN-75B HB52F649EN-75B HM5225805BTT PC133-SDRAM

    Hitachi DSA00164

    Abstract: Nippon capacitors
    Text: HB52F648EN-75B, HB52F649EN-75B 512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus HB52F648EN 64-Mword x 64-bit, 2-Bank Module (16 pcs of 32 M × 8 Components) (HB52F649EN) 64-Mword × 72-bit, 2-Bank Module (18 pcs of 32 M × 8 Components) PC133 SDRAM ADE-203-1115A (Z)


    Original     		PDF HB52F648EN-75B, HB52F649EN-75B HB52F648EN) 64-Mword 64-bit, HB52F649EN) 72-bit, PC133 ADE-203-1115A Hitachi DSA00164 Nippon capacitors

    HM5225405B-75

    Abstract: HM5225405BTT-75 Hitachi DSA00174 HM5225165BLTT-75
    Text: HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-1073B Z Rev. 1.0 Feb. 10, 2000 Description


    Original     		PDF HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 Hz/100 16-bit /16-Mword PC/133, PC/100 ADE-203-1073B HM5225165B HM5225405B-75 HM5225405BTT-75 Hitachi DSA00174 HM5225165BLTT-75

    Hynix Cross Reference

    Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
    Text: DRAM Cross Reference DDR SDRAM Winbond P/N W946432AD W942504AH W942508AH W942516AH Density 64Mb 256Mb 256Mb 256Mb Org. 2Mx32 64Mx4 32Mx8 16Mx16 Samsung K4D62323HA K4H560438B K4H560838B K4H561638B Hynix Hyundai HY57V643220CT HY5DU56422T HY5DU56822T HY5DU561622T


    Original     		PDF W946432AD W942504AH W942508AH W942516AH 256Mb 2Mx32 64Mx4 32Mx8 Hynix Cross Reference dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v

    Untitled

    Abstract: No abstract text available
    Text: HM5225165B-75/A6/B6, HM5225805B-75/A6/B6, HM5225405B-75/A6/B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM H IT A C H I 4-bank ADE-203-1073 Z Preliminary Rev. 0.0 Jun. 14, 1999


    OCR Scan     		PDF HM5225165B-75/A6/B6, HM5225805B-75/A6/B6, HM5225405B-75/A6/B6 Hz/100 16-bit /16-Mword PC/133, PC/100 ADE-203-1073 HM5225165B