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    Infineon Technologies AG CHL8328-22CRT

    IC REG CTRLR DDR 2OUT 56VQFN
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    Infineon Technologies AG CHL8328-14CRT

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    Infineon Technologies AG CHL8328-34CRT

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    Infineon Technologies AG CHL8328-31CRT

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    Infineon Technologies AG CHL8328-23CRT

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    HL832 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HL832 Samsung Electronics Original PDF
    HL8325G Hitachi Semiconductor GaAlAs Laser Diode Original PDF
    HL8325G OpNext GaAlAs Laser Diode Original PDF
    HL8325G Renesas Technology GaAlAs Laser Diode Original PDF
    HL8325G98 OpNext Laser Diode, 40mW Power, 840nm Wave Length, 40mA Current Original PDF
    HL832-HS Samsung Electronics Original PDF
    HL832-NB Samsung Electronics Original PDF

    HL832 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA002726

    Abstract: No abstract text available
    Text: HL8325G GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical


    Original     		PDF HL8325G HL8325G HL8325G: Hitachi DSA002726

    HL8325G

    Abstract: No abstract text available
    Text: HL8325G GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical


    Original     		PDF HL8325G HL8325G

    HL8325G

    Abstract: No abstract text available
    Text: HL8325G ODE-208-048A Z Rev.1 May 08, 2007 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light


    Original     		PDF HL8325G ODE-208-048A HL8325G HL8325G:

    HL8325G

    Abstract: No abstract text available
    Text: HL8325G GaAlAs Laser Diode ODE-208-582C Z Rev.3 Mar. 2005 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It


    Original     		PDF HL8325G ODE-208-582C HL8325G HL8325G:

    Untitled

    Abstract: No abstract text available
    Text: HL8325G ODE-208-048B Z Rev.2 Feb. 01, 2008 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light


    Original     		PDF HL8325G ODE-208-048B HL8325G HL8325G:

    Untitled

    Abstract: No abstract text available
    Text: HL8325G ODE2051-00 M Rev.0 Aug. 01, 2008 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 m band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light


    Original     		PDF HL8325G HL8325G ODE2051-00 HL8325G:

    Hitachi DSA00164

    Abstract: No abstract text available
    Text: HL8325G GaAlAs Laser Diodes ADE-208-582 Z 1st. Edition October 1997 Description The HL8325G is a high - power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is


    Original     		PDF HL8325G ADE-208-582 HL8325G D-85622 Hitachi DSA00164

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: HL8325G GaAlAs Laser Diode ADE-208-582A Z 2nd Edition Dec. 2000 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It


    Original     		PDF HL8325G ADE-208-582A HL8325G HL8325G: D-85622 Hitachi DSA00279

    HL8325G

    Abstract: Hitachi DSA0047
    Text: HL8325G GaAlAs Laser Diode ADE-208-582A Z 2nd Edition Dec. 2000 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is


    Original     		PDF HL8325G ADE-208-582A HL8325G HL8325G: Hitachi DSA0047

    Untitled

    Abstract: No abstract text available
    Text: HL8325G ODE-208-048 Z Rev.0 Oct. 17, 2006 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light


    Original     		PDF HL8325G HL8325G ODE-208-048 HL8325G:

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    opnext

    Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
    Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring


    Original     		PDF D-85622 opdb-090103 opnext HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g

    AU-85B

    Abstract: Taiyo AUS-308 bi8921t prepreg GHPL-830 Bi8921 GHPL-830 GHPL MOMBD420G1A GHPL prepreg Samsung CMOS Image sensor
    Text: Specification for Approval Samsung Electro-Mechanics Co.,LTD PDF created with pdfFactory Pro trial version www.pdffactory.com Specification for Approval Revision History Rev. Date Description of Change Rev. Page 1 2005.07.30 The Primary Specification 1.0 Rev.


    Original     		PDF AU-85B MOMBD420G1A AU-85B Taiyo AUS-308 bi8921t prepreg GHPL-830 Bi8921 GHPL-830 GHPL MOMBD420G1A GHPL prepreg Samsung CMOS Image sensor

    ge100lfcsv

    Abstract: GE100LFCS SPIL mold compound aus308 GE-100LFCS-V HL832NX Ablestik 89HPES12N3AZGBCGI AUS-308 89HPES10T4G2ZBBCG
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A1008-03 Product Affected: DATE: September 10, 2010 MEANS OF DISTINGUISHING CHANGED DEVICES: 19mm x 19mm CABGA-324 (Standard & Green)


    Original     		PDF A1008-03 CABGA-324 89HPES12N3A2ZCBCI8 89HPES12N3AZCBC 89HPES12N3AZCBCG 89HPES12N3AZCBCI 89HPES12N3AZGBC 89HPES12N3AZGBCG 89HPES12N3AZGBCGI 89HPES12N3AZGBCI ge100lfcsv GE100LFCS SPIL mold compound aus308 GE-100LFCS-V HL832NX Ablestik 89HPES12N3AZGBCGI AUS-308 89HPES10T4G2ZBBCG

    nitto GE

    Abstract: GE-100L SXVX-50BHG nitto GE-100L SXVX-210BHG SXVX-50 HL832NX SXVX-210 Nitto GE 100 HL832HS
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A1008-07 Product Affected: DATE: September 17, 2010 MEANS OF DISTINGUISHING CHANGED DEVICES: 17mm x 17mm TEBGA-580 (Green) Product Mark


    Original     		PDF A1008-07 TEBGA-580 facilitSD22-A110 JESD22-A104 JESD22-A103 JESD22-A113 SXVX-110BHG SXVX-200BHG SXVX-210BHG nitto GE GE-100L SXVX-50BHG nitto GE-100L SXVX-210BHG SXVX-50 HL832NX SXVX-210 Nitto GE 100 HL832HS

    hitachi DC9300

    Abstract: 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW
    Text: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage, Hitachi offers a complete line-up of 635nm to 830nm laser diodes


    Original     		PDF 635nm 830nm HE7601 HE8404 HE8807 HE8811 HE8812 HE7601SG HE8404SG hitachi DC9300 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW

    Untitled

    Abstract: No abstract text available
    Text: HL8325G GaAIAs LD Description The HL8325G is a high-power 0.8 jim band GaAIAs la ser diode with a TQW i triple quantum w ell structure. Its internal circuit configuration is suited for oper ation on a single positiv e supply voltage. It is suitable as a light source for optical disk memories, card re aders and various other types o f optical equipment.


    OCR Scan     		PDF HL8325G HL8325G

    Untitled

    Abstract: No abstract text available
    Text: HL8325G GaAlAs Laser Diodes HITACHI ADE-208-582 Z 1st. Edition October 1997 Description The HL8325G is a high - power 0.8 (Am band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is


    OCR Scan     		PDF HL8325G ADE-208-582 HL8325G

    MA177

    Abstract: No abstract text available
    Text: HL8325G GaAIAs Laser Diode Description The HL8325G is a high-power 0.8 jim band GaAIAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types o f optical


    OCR Scan     		PDF HL8325G HL8325G HL8325G: MA177

    CCL-HL832

    Abstract: PSR4000 taiyo PSR4000
    Text: REV I S I ONS 80X r 0.45 (80X (4) A □_P 0.3) TO D O C U M E N T C O N T R O L E.C.N. DATE 12401 04/19/2000 BY/APP'D TL/GN TYP) □ _ o □ a a a □ a _p a □ 0.5) RELEASE I (1 o □ a ( 72X DESCRIPTION LTR r □□ o □ o (4) □ a □ a •-Q - □


    OCR Scan     		PDF p-7-7-7-7-77- CCL-HL832 PSR4000 MQ-208, taiyo PSR4000

    PSR4000

    Abstract: CCL-HL832 HL832
    Text: REV I S I ONS LTR 48X 0.45 ( 6 : A DESCRIPTION RELEASE TO D O C U M E N T C O N T R O L E.C.N. DATE 12450 04/19/2000 BY/APP'D T L / WL 1 ( 48X ( 44X T 0.3) □ □ □ □ o □ a a □ □ _P 0.5) X_° a (6 a_ "a ! □ Q - I a □ I □ T' □ a DIMENSIONS ARE IN MILLIMETERS


    OCR Scan     		PDF CCL-HL832 PSR4000 MQ-208, SOMKT-SLB48B HL832

    HL7806

    Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
    Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G


    OCR Scan     		PDF HL6314M HL6316G HL6411G* HL6315G HL6312G 6313G HL6720G HL6724M HL6712G HL6722G HL7806 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851

    CCL-HL-832

    Abstract: PSR-4000 CCL-HL832 PSR4000 taiyo PSR4000
    Text: 96X ( 96X r 0.45 0.3) J 1=1 ' I ! I o _ a _ ! I o a Q-E3Q-E3J a a - i— 0.5) LTR A a I a a a a a a ( 88X REV I S I ONS (5) I I ! I (1 DESCRIPTION RELEASE TO D O C U M E N T C O N T R O L E.C.N. DATE 12334 12/13/1999 BY/APP'D TL/GN TYP) l a a a a a a a


    OCR Scan     		PDF CCL-HL832 PSR4000 MQ-208, SOMKT-SLB96A CCL-HL-832 PSR-4000 taiyo PSR4000

    TAIYO PSR 4000

    Abstract: TAIYO soldermask MO-208 psr-4000 CCL-HL832 PSR-4000 h PSR4000
    Text: R E 24X 0 .4 5 — H ¿ ( 24X h I I i—i rii -l=l LTR H ( 2 .5 ) (—i I □ [J] □_ a 0.25) V 1 S 1 O N S DESCRIPTION BY/APP'D E . C. N . DATE A RELEASE 1195 7 03/19/1998 TL/AP B R E V I S E METAL & SOLDERMASK L A Y E R S ; PKG T H I C K N ES S WAS 0 . 9 - 1 . 1 ; R E V I S E T I T L E ;


    OCR Scan     		PDF CCL-HL832 PSR4000 MO-208, TAIYO PSR 4000 TAIYO soldermask MO-208 psr-4000 PSR-4000 h