HL8312 Search Results

HL8312 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HL8312E		Hitachi Semiconductor	Laser Diode: 20mW Power: 850nm Wave Length: 60mA Current		Scan	PDF
HL8312G		Hitachi Semiconductor	Laser Diode: 20mW Power: 850nm Wave Length: 60mA Current		Scan	PDF

HL8312 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HL8312E-Laser Diode Description H L 8 3 1 2 E is a h ig h -p o w e r 0 .8 iin G a A IA s la se r d io d e w ith d o u b le h e te ro ju n c tio n s tru c tu re . It is s u ita b le as a lig h t s o u rc e in o p tical disc m e m o rie s a n d v a rio u s o th e r ty p e s o f o p tic a l e q u ip	OCR Scan	PDF	HL8312E---------------Laser HL8312E
HE8813VG Abstract: HE8403 HE8807SG HE8811 HE8815VG HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807 Text: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^2 0 5 G0120b7 « H i m -4 1 -os The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment	OCR Scan	PDF	HL8312E/G HL8312E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HE8813VG HE8403 HE8807SG HE8811 HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807
Untitled Abstract: No abstract text available Text: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^ 2 0 5 G0120b7 «Him -4 1 - o s The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment	OCR Scan	PDF	HL8312E/G G0120b7 HL8312E/G 44Tfei5D5 001E070
Untitled Abstract: No abstract text available Text: HL8312G Laser Diode Description H L 8 3 1 2 G is a high-pow er 0.8 iin G aA IA s laser d io d e with d o u b le h etero ju n ctio n structure. It is su itab le as a light source in optical disc m em o rie s and v arious o th e r types o f optical equip	OCR Scan	PDF	HL8312G HL8312G
HL7801 Abstract: HL7806 Text: §2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).	OCR Scan	PDF
HL7801 Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301 Text: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838	OCR Scan	PDF	HL671IG HL671I HL7801 HL7802 HL7806 HL7831 HL7832 HL7836 HL7838 HL83H HE8807CL HL7801E HL1324MF HL83M HE8812 hitachi he1301
free transistor equivalent book 2sc Abstract: HA13108 HL7801G HL7801E free thyristor equivalent book 2sc 2SC1707 HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint HD44237 semi catalog pic micro weighing scale code example Text: RELIABILITY 1. 1.1 R E L IA B IL IT Y R E L IA B IL IT Y C H A R A C T E R IS T IC S F O R S E M IC O N D U C T O R D E V IC E S Hitachi semiconductor devices are designed, manufactured and inspected so as to achieve a high level of reliability. Accordingly, system reliability can be improved by com	OCR Scan	PDF
HA 12058 Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P Text: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION	OCR Scan	PDF	HD25/HD HMCS40 HL8314E" HL8312 HL8311 HLP1000 HL7802 HL7801 HL1221 HLP5000 HA 12058 HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P