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    HL63133DG Price and Stock

    Ushio Opto Semiconductors Inc HL63133DG

    638nm / 170mW AlGaInP Laser Diode - Trays (Alt: HL63133DG)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HL63133DG Tray 12 Weeks, 6 Days 20
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    • 1000 $57.0745
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    Ushio Opto Semiconductors Inc HL63133DG98

    LASER DIODE - Trays (Alt: HL63133DG98)
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    Avnet Americas HL63133DG98 Tray 10
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    HL63133DG Datasheets Context Search

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    Abstract: No abstract text available
    Text: Data Sheet HL63133DG AIGaInP Laser Diode 638nm/170mW Features: Outline • Visible light output: 638nm Typ.  Optical output power: 170mW CW  Single transverse mode  Low operating current: 250mA Typ.  Low operating voltage: 2.8V Typ.  Small package: 5.6mm


    Original     		PDF HL63133DG 638nm/170mW 638nm 170mW 250mA HL63133DG

    hl63133dg

    Abstract: opnext laser diode HL63133DG
    Text: HL63133DG ODE2071-01 P Preliminary Rev.1 Dec. 14, 2009 Low Operating Current Visible High Power Laser Diode Description The HL63133DG is 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as light sources for miniature laser display, laser module and optical equipment for measurement.


    Original     		PDF HL63133DG ODE2071-01 HL63133DG HL63133DG: opnext laser diode HL63133DG

    opnext laser diode HL63133DG

    Abstract: HL63133DG
    Text: HL63133DG ODE2071-02 M Rev.2 Apr. 13, 2010 Low Operating Current Visible High Power Laser Diode Description The HL63133DG is 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as light sources for pico projector, show laser and optical equipment for measurement.


    Original     		PDF HL63133DG HL63133DG ODE2071-02 HL63133DG: opnext laser diode HL63133DG