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    HFE-1000 BC Search Results

    HFE-1000 BC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SF-NLMAMB0001-0001 Amphenol Cables on Demand Amphenol SF-NLMAMB0001-0001 OSFP 400G Loopback Adapter Module for OSFP Port Testing - 0dB Attenuation & 0W Power Consumption [400-Gigabit Ethernet Ready] Datasheet
    SF-NLNAMB0001-0001 Amphenol Cables on Demand Amphenol SF-NLNAMB0001-0001 QSFP-DD 400G Loopback Adapter Module for QSFP-DD Port Testing - 0dB Attenuation & 0W Power Consumption [400-Gigabit Ethernet Ready] Datasheet
    10005639-11109LF Amphenol Communications Solutions Vertical Through-Hole 240 Position DDR2 DIMM Connector, 1.00mm pitch Visit Amphenol Communications Solutions
    10008026-201 Amphenol Communications Solutions GIG-Array®, Mezzanine Connectors, 13mm Plug 296 Position. Visit Amphenol Communications Solutions
    10005639-12328HLF Amphenol Communications Solutions DDR2 DIMM, Storage and Server Connector, Vertical, Through Hole, 240 Position, 1.00mm (0.039in) Pitch Visit Amphenol Communications Solutions

    HFE-1000 BC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJD112

    Abstract: MJD117 MJD122 MJD127 MJD6036 MJD6039
    Text: SMD Darlington Power Transistors Part No. MJD6039 MJD112 MJD122 MJD6036 MJD117 MJD127 20070515 Polarity NPN PNP IC A 4 2 8 4 2 8 VCEO (V) 80 100 100 80 100 100 PC (W) 20 20 20 20 20 20 hFE @ VCE & IC Min. Max. 1000 1000 1000 1000 1000 1000 12K 12K 12K 12K


    Original     		PDF MJD6039 MJD112 MJD122 MJD6036 MJD117 MJD127 800Transistors MJD112 MJD117 MJD122 MJD127 MJD6036 MJD6039

    transistor mj11032 equivalent

    Abstract: transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc


    Original     		PDF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 transistor mj11032 equivalent transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326

    C2611

    Abstract: MJE-13002 lb123 MJE13002 2SB772 MJE13003 MJE-13003 controler 2SD882 ecb transistors
    Text: TO-251 PACKAGE MX MICROELECTRONICS ● Applied for power drive power switch . PD TYPE NPN *Tc= ICBO Ic VCBO VCEO * ICEO OR 25℃ PNP mW ▲ (mA) VCES ICES VCB hFE fT PIN IC IB VCE IC *TPY (mA) (mA) (V) (mA) (MHZ) 123 60-400 60-400 2 2 1000 1000 80 90 ECB


    Original     		PDF O-251 2SB772 2SD882 C2611 MJE13002 MJE13003 LB123 LB123 MXB1184L C2611 MJE-13002 MJE-13003 controler ecb transistors

    TIP142 TRANSISTOR REPLACEMENT

    Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V


    Original     		PDF TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142

    mj11015 equivalent

    Abstract: MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor


    Original     		PDF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 mj11015 equivalent MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000

    BDV65B equivalent

    Abstract: buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistors


    Original     		PDF BDV65B BDV64B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BDV65B equivalent buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340

    BC327 45V 800mA PNP Transistor

    Abstract: TRANSISTOR BC337-25 PNP BC337 45V 800mA TRANSISTOR BC337-40 PNP BC337-25 PNP transistor marking EB 202 transistor TRANSISTOR BC337-25 BC327 45V 800mA PNP Transistors TRANSISTOR BC327-40 OF TRANSISTOR BC337
    Text: BC327 SERIES PNP GENERAL PURPOSE TRANSISTORS 5 VOLTAGE 45 POWER 625mW FEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = -800mA MECHANICAL DATA 1 COLLECTOR Case: TO-92 Terminals: Solderable per MIL-STD-202, Method 208


    Original     		PDF BC327 625mW -800mA MIL-STD-202, BC327-16: BC327-25: BC327-40: BC327-xx BC327 45V 800mA PNP Transistor TRANSISTOR BC337-25 PNP BC337 45V 800mA TRANSISTOR BC337-40 PNP BC337-25 PNP transistor marking EB 202 transistor TRANSISTOR BC337-25 BC327 45V 800mA PNP Transistors TRANSISTOR BC327-40 OF TRANSISTOR BC337

    BC807

    Abstract: BC807-16 BC807-25 BC807-40
    Text: BC807 SERIES PNP GENERAL PURPOSE TRANSISTORS POWER 45 Volts VOLTAGE SOT- 23 225 mWatts Unit: inch mm FEATURES • General purpose amplifier applications .103(2.60) .056(1.40) .047(1.20) • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		PDF BC807 500mA 2002/95/EC OT-23, BC807-16 MIL-STD-750, BC807-25 BC807-40 BC807-16 BC807-25 BC807-40

    BC327 NATIONAL SEMICONDUCTOR

    Abstract: *327-25 bc327 bc338 complementary bc3271 BC327 vishay BC328-25
    Text: BC327 / BC328 VISHAY Vishay Semiconductors Small Signal Transistors PNP Features • PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. • These types are also available subdivided into


    Original     		PDF BC327 BC328 BC337 BC338 BC327-16 BC327-25 BC327-40 BC328-16 BC328-25 BC328-40 BC327 NATIONAL SEMICONDUCTOR *327-25 bc338 complementary bc3271 BC327 vishay

    2n3072

    Abstract: No abstract text available
    Text: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE(sat) VCE max (V) (V) (A) 2N2243A 2N2270 2N2297 2N2303 2N2309 N N N P N TO-39 TO-39 TO-39 TO-39 TO-39 800 1000 800 600 600 1 1 1 0.5


    OCR Scan     		PDF 2N2243A 2N2270 2N2297 2N2303 2N2309 2N2380 2N2380A 2N2405 2N2479 2N2800 2n3072

    Transistor BC177

    Abstract: 2N697 2N2475 audio BC108 2N1131 2N1132 2N4037 2N696 BC107 BC177
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 2N2475 audio BC108 2N1131 2N1132 2N4037 BC177

    N706A

    Abstract: 2N2368 2N2475 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Max Vc b V c e O ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at Pto t at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 N706A 2N2368 2N2475 2N1131 2N1132 2N4037 BC177

    2N2905A complement

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: 2N3053 CÛ U > > Type 60 VCEO Max Ic hFE Max VcE sat at V ic mA IB mA Min Max 50 250 V mA 40 700 1 -4 150 15 Min fT at at ic ic mA MHz mA 150 100 60 150 50 I s = ! M Hn1 NPN GENERAL PURPOSE - Continued 1000 Package Comple­ ment T039 2N4037 2N696 60 40 500 1 -5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2N2905A complement 2N1131 2N1132 2N4037 BC177

    BCY78

    Abstract: 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BCY78 2N1131 2N1132 2N4037 BC177 BCY79

    BCY56

    Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 BCY59A 2N1131 2N1132 2N4037 BC177

    BSY52

    Abstract: BCY56 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    BC178

    Abstract: BC107 BCY56 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BC178 BCY56 2N1131 2N1132 2N4037 BC177

    N706A

    Abstract: BC107 N706 N3053 BC178 2N1131 2n3053 2N4037 2N696 2N697
    Text: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 N706A N706 BC178 2N1131 2n3053 2N4037

    N3053

    Abstract: BC107 2N1131 2N1132 2N4037 2N696 2N697 BC177 BCY59 BCY79
    Text: NPN G EN ER A L P U R P O SE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2N1131 2N1132 2N4037 BC177 BCY79

    2N696

    Abstract: 2n706 BC178 BC107 bc107 complement 2N1131 2N1132 2N4037 2N697 BC177
    Text: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2n706 BC178 bc107 complement 2N1131 2N1132 2N4037 BC177

    Transistor BC177

    Abstract: BCY42 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 BCY59
    Text: NPN G EN ER A L P U R P O SE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 BCY42 2N1131 2N1132 2N4037 BC177

    cv8616

    Abstract: BC107-108-109 2N2905 MOTOROLA 2N2906 JANTX 2N2904 transistor 2N2904A 2N4033 motorola 2n4033 2N2222A JAN 2N2222A JANTXV
    Text: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200 200


    OCR Scan     		PDF N3963 N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 BCY79 BCY71 cv8616 BC107-108-109 2N2905 MOTOROLA 2N2906 JANTX 2N2904 transistor 2N2904A 2N4033 motorola 2n4033 2N2222A JAN 2N2222A JANTXV

    TYP 513 309

    Abstract: philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144
    Text: Philips Semiconductors Surface mounted transistors Selection guide GENERAL PURPOSE APPLICATIONS hFE TYPE NUMBER V CEO •c V (mA) fr Plot (mw) min. max. typ (MHz) PAGE NPN BC817 45 500 250 100 600 200 159 BC818 25 500 250 100 600 200 159 BC846 65 100 250


    OCR Scan     		PDF BC817 BC818 BC846 BC847 BC848 BC868 BCP54 BCP55 BCP56 BCP68 TYP 513 309 philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144