Untitled
Abstract: No abstract text available
Text: HYB39S16400/800/160CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature
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HYB39S16400/800/160CT-8/-10
16MBit
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Untitled
Abstract: No abstract text available
Text: Advance Information SEMICONDUCTORS M U 9C 8358 Quad 10/1 OOMb E th e rn e t F ilte r In te rfa c e DISTINCTIVE CHARACTERISTICS APPLICATION BENEFITS > > 10/1 OOMb Ethernet switching, bridging, and remote access at wire speed Glueless connection to MUSIC LANCAM and
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10/100Mb
100Mb
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hdq10
Abstract: HDQ13
Text: Advance Information S E M I C O N D U C T O R S MU9C8358 Quad 10/1 OOMb Ethernet Filter Interface DISTINCTIVE CHARACTERISTICS APPLICATION BENEFITS > 10/1 OOMb Ethernet switching, bridging, and remote access at wire speed > Four industry-standard 10/100Mb Mil ports
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MU9C8358
100Mb
10/100Mb
hdq10
HDQ13
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Untitled
Abstract: No abstract text available
Text: n i CR ON S E M I C O N D U C T O R IN b3E D • blllS^ OOOflbTb 11b ■ MICRON I k m ,c o n d u c t o » « c NRN M T 4C 16256/7/8/9 L 256K X 16 W ID ED R A M WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions
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256KX16DRAM
MT4C16257/9
MT4C16258/9
512-cyde
MT4C16256/7/8/9
MT4C1C25OTV9L
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Untitled
Abstract: No abstract text available
Text: KM416V4000AS CMOS D R A M ELECTRONICS 4M X 16Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6
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KM416V4000AS
16Bit
4Mx16
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 18 1 65 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5118165A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5118165A achieves high integration, high-speed operation, and low-power
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576-Word
16-Bit
MSM5118165A
42-pin
50/44-pin
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58F400F/401 F/FT-90,10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-MBIT 524,288 W ORDS x 8 BITS/262,144 W O RD S x16 BITS CMOS FLASH M EM O RY DESCRIPTION The TC58F400/401 is a 4,194,304-bit electrically erasable and programmable flash memory organized
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TC58F400F/401
F/FT-90
BITS/262
TC58F400/401
304-bit
44-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: Advance Information C T O R S M U9C8358 Quad 10/1 OOMb Ethernet F ilter Interface DISTINCTIVE CHARACTERISTICS APPLICATION BENEFITS > > 10/1 OOMb Ethernet switching, bridging, and remote access at wire speed Glueless connection to MUSIC LANCAM and > Four industry-standard 10/100Mb Mil ports
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U9C8358
10/100Mb
100Mb
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