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    onsemi H11G2M

    OPTOISO 4.17KV DARL W/BASE 6DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11G2M Tube 2,229 1
    • 1 $1.09
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    • 100 $1.09
    • 1000 $0.34626
    • 10000 $0.28963
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    Avnet Americas H11G2M Bulk 8 Weeks, 5 Days 1
    • 1 $0.359
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    H11G2M Bulk 15 Weeks 3,000
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    Mouser Electronics H11G2M 20,339
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    Arrow Electronics H11G2M 3,000 15 Weeks 1,000
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    • 1 $0.381
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    H11G2M Bulk 405 1
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    Onlinecomponents.com H11G2M 1,850
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    TME H11G2M 610 1
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    Avnet Asia H11G2M 15 Weeks 3,000
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    Avnet Silica H11G2M 2,000 16 Weeks 1,000
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    EBV Elektronik H11G2M 17 Weeks 1,000
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    Master Electronics H11G2M 1,850
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    New Advantage Corporation H11G2M 2,000 1
    • 1 -
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    onsemi H11G2SR2M

    OPTOISO 4.17KV DARL W/BASE 6SMD
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    DigiKey H11G2SR2M Cut Tape 1,495 1
    • 1 $1.27
    • 10 $0.787
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    H11G2SR2M Digi-Reel 1,495 1
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    H11G2SR2M Reel 1,000 1,000
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    Mouser Electronics H11G2SR2M 7,353
    • 1 $1.13
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    Verical H11G2SR2M 7,000 1,000
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    H11G2SR2M 2,003 18
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    H11G2SR2M 2,000 1,000
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    Arrow Electronics H11G2SR2M 7,000 15 Weeks 1,000
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    H11G2SR2M Cut Strips 2,003 15 Weeks 1
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    Newark H11G2SR2M Bulk 872 1
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    H11G2SR2M Reel 1,000
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    Onlinecomponents.com H11G2SR2M 2,000
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    TME H11G2SR2M 1
    • 1 $1.206
    • 10 $0.666
    • 100 $0.51
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    Avnet Asia H11G2SR2M 15 Weeks 3,000
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    Avnet Silica H11G2SR2M 16 Weeks 1,000
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    EBV Elektronik H11G2SR2M 17 Weeks 1,000
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    Master Electronics H11G2SR2M 2,000
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    onsemi H11G2SR2VM

    OPTOISO 4.17KV DARL W/BASE 6SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11G2SR2VM Digi-Reel 996 1
    • 1 $1.09
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    H11G2SR2VM Cut Tape 996 1
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    H11G2SR2VM Reel 1,000
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    • 10000 $0.28963
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    Avnet Americas H11G2SR2VM Reel 15 Weeks 3,000
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    Mouser Electronics H11G2SR2VM 611
    • 1 $1.04
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    Arrow Electronics H11G2SR2VM 2,000 1
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    Newark H11G2SR2VM Reel 1,000
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    Rochester Electronics H11G2SR2VM 19,000 1
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    onsemi H11G2SM

    OPTOISO 4.17KV DARL W/BASE 6SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11G2SM Tube 478 1
    • 1 $1.22
    • 10 $1.22
    • 100 $1.22
    • 1000 $0.39682
    • 10000 $0.33432
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    Avnet Americas H11G2SM Bulk 15 Weeks 3,000
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    Mouser Electronics H11G2SM 793
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    Isocom Components H11G2SM

    6PIN DARLINGTON OUTPUT, HIGH VOL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11G2SM Tube 65 1
    • 1 $1.58
    • 10 $0.976
    • 100 $1.58
    • 1000 $0.49067
    • 10000 $0.36844
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    • 1 $0.532
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    H11G2 Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H11G2 Fairchild Semiconductor High Voltage Photodarlington Optocoupler Original PDF
    H11G2 Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G2 Isocom Components 3V, 60mA high voltage darlington output optically coupled isolator Original PDF
    H11G2 On Semiconductor Phototransistor, 6-Pin, DIP, Optoisolators Transistor Darlington Output(On Chip Resistor) Original PDF
    H11G2 Fairchild Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - High-Voltage Photo Darlington Output 5.3kV 80V Min. BV CEO Scan PDF
    H11G2 General Instrument 80 V, high voltage photodarlington optocoupler Scan PDF
    H11G2 Isocom Components Optoelectronics Data Book 1996 Scan PDF
    H11G2 Motorola European Master Selection Guide 1986 Scan PDF
    H11G2 Motorola Optoelectronics Device Data 1988 Scan PDF
    H11G2 Motorola Switchmode Datasheet Scan PDF
    H11G2 QT Optoelectronics HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPERS Scan PDF
    H11G2300 Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G2300 Fairchild Semiconductor HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLER Original PDF
    H11G2300W Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G2300W Fairchild Semiconductor HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLER Original PDF
    H11G23S Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G23S Fairchild Semiconductor HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLER Original PDF
    H11G23SD Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G23SD Fairchild Semiconductor HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLER Original PDF
    H11G2G Isocom Components HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR Original PDF

    H11G2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    h11g1 case 730c-04

    Abstract: H11GX 1N4004 H11G1 H11G2 H11G3 motorola 1n4004
    Text: MOTOROLA Order this document by H11G1/D SEMICONDUCTOR TECHNICAL DATA H11G1 * [CTR = 1000% Min] GlobalOptoisolator H11G2* 6-Pin DIP Optoisolators Darlington Output On-Chip Resistors The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral


    Original
    PDF H11G1/D H11G1 H11G2* H11G1, H11G2 H11G3 H11G3 H11Ging h11g1 case 730c-04 H11GX 1N4004 H11G1 motorola 1n4004

    H11G2M

    Abstract: No abstract text available
    Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon


    Original
    PDF H11G1M, H11G2M, H11G3M H11GXM H11G1M H11G2M E90700, H11G2M

    H11G1

    Abstract: H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M H11G1M H11G1SM fairchild logic
    Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon


    Original
    PDF H11G1M, H11G2M, H11G3M H11GXM H11G1M H11G2M E90700, H11G1 H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M H11G1M H11G1SM fairchild logic

    H11GX

    Abstract: H11G1 datasheet H11G2 H11G1 H11G3
    Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor


    Original
    PDF H11G1 H11G2 H11G3 H11GX E90700 00045A H11G1 datasheet H11G2 H11G1 H11G3

    H11G1

    Abstract: H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M
    Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon


    Original
    PDF H11G1M, H11G2M, H11G3M H11GXM H11G1M H11G2M E90700, H11G1 H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M

    H11G2

    Abstract: H11G1 E91231 H11G1X H11G3 Diode smd code sm
    Text: H11G1, H11G2, H11G3 H11G1X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS H11G1X VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802


    Original
    PDF H11G1, H11G2, H11G3 H11G1X E91231 H11G1X DB92008 H11G2 H11G1 E91231 H11G3 Diode smd code sm

    H11GX

    Abstract: H11G1 H11G2 H11G3
    Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor


    Original
    PDF H11G1 H11G2 H11G3 H11GX E90700 H11G1 H11G2 H11G3

    H11GX

    Abstract: H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M
    Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers tm Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon


    Original
    PDF H11G1M, H11G2M, H11G3M H11GXM H11G1M H11G2M E90700, H11GX H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M

    E91231

    Abstract: H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X
    Text: H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form Dimensions in mm 2.54 7.0 6.0


    Original
    PDF H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 E91231 DB92008m-AAS/a1 E91231 H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X

    Untitled

    Abstract: No abstract text available
    Text: H11G1, H11G2, H11G3 H11G1X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS z UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS z H11G1X VDE 0884 in 3 available lead form:- STD - G form - SMD approved to CECC 00802


    Original
    PDF H11G1, H11G2, H11G3 H11G1X E91231 H11G1X DB92008m-AAS/A5

    E91231

    Abstract: H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X
    Text: H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS VDE 0884 in 2 available lead forms : - STD - G form Dimensions in mm 2.54 7.0 6.0 l


    Original
    PDF H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 E91231 DB92008-AAS/A1 E91231 H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X

    H11G1

    Abstract: H11G1X H11G2 H11G2X H11G3 H11G3X E91231
    Text: H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form Dimensions in mm 2.54 7.0 6.0


    Original
    PDF H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 E91231 DB92008m-AAS/a1 H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X E91231

    h11q

    Abstract: H11Q2 H11U
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE UL CSA <D ® ® 8ET1 H11G1* H11G2* H11G3 8 EMKO DEMKO NEMKO [CTR • 1000% Min] GlobalOptdsolfttor 6 -Pin DIP Optoisolators Darlington Output On-Chip Resistors The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs


    OCR Scan
    PDF H11G1, H11G2 H11G3 H11G1* H11G2* H11G3 H11G1 H11G1 H11Gx h11q H11Q2 H11U

    H11GX

    Abstract: GE H11G1 H11G2 H11G1 IEC204 VDE0113 VDE0160 VDE0832
    Text: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA H11G1 H11G2 H11G3 6-Pin DIP O ptoisolators Darlington Output . . . consists of gallium -arsenide IREDs optically coupled to silicon photodarlington detec­ tors which have integral base-emitter resistors. The on-chip resistors improve higher


    OCR Scan
    PDF H11G1 H11G2 H11G1, H11G2, H11G3 50-VOLT, H11Gx H11Gx GE H11G1 H11G2 H11G1 IEC204 VDE0113 VDE0160 VDE0832

    Untitled

    Abstract: No abstract text available
    Text: [sO HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS i I -I H11G1 H11G2 PACKAGE DIMENSIONS DESCRIPTION The H11G1 and H 11G 2arethe photodarlington-type optically coupled optoisolators. Both devices have a gallium arsenide infrared em itting diode coupled with a


    OCR Scan
    PDF H11G1 H11G2 H11G1 C1706 C1705 C1707 C1708

    H1163

    Abstract: C1709 C1706 MCA11G3 C2083 C2090 H11G1 H11G2 H11G3 MCA11G1
    Text: GENL I N S T R t OPTOELEK 88D aa GENERAL INSTRUMENT 0 2897 DE Ê BôTDlHû 00020^7 D HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS MCA11G1 H11G1 MCA11G2 (H11G2) MCA11G3 (H11G3) PACKAGE DIMENSIONS Æ . hB l iS l r" I 6.86 (.270) 6.35 (.250) 0.36 (.014) I f ¥


    OCR Scan
    PDF T012a MCA11G1 MCA11G2 H11G2) MCA11G3 H11G3) C2090 C2083 MCA11G1 MCA11G2 H1163 C1709 C1706 MCA11G3 C2083 C2090 H11G1 H11G2 H11G3

    Untitled

    Abstract: No abstract text available
    Text: 6 LEADED DEVICES continued Resistor Darlington Output Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Emitter, 5-Collector, 6-Base (Style 1) Current Transfer Ratio (CTR) Device H11G1S,F H11G2S,F H11G3S.F % Min e* If @ mA 1000 1000 200 10 10 1 VCE(sat) VOF Volts Volts


    OCR Scan
    PDF H11G1S H11G2S H11G3S MOC8204$ H11D1S H11D2S H11L1S H11L2S MOC5008S MQC5009S

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONI CS 1 I — I H11G1 H11G2 PACKAGE DIMENSIONS DESCRIPTION 1 6.35 REF o 03 1 W W ^ 7.62 ^ MAX 0.41 OP _ 0.2 1 The H11G1 and H11G2 are the photodarlington-type optically coupled optoisolators. Both devices have a


    OCR Scan
    PDF H11G1 H11G2 H11G2 C1705 C1706 C1707 C1708

    H11U

    Abstract: No abstract text available
    Text: 02897 D J ^ t t a S l 88D flfl T E C H N O L O G I E S CORP GENERAL INSTRUMENT 0DD2S-Ì7 h ig h v o itag e p h o to p a ru n g to n o p to c o u p le r s MCA11G1 H11G1 M C A 11G 2 (H11G2) M C A 11G 3 (H11G3) DESCRIPTION PACKAGE DIMENSIONS t 6.86 (.270) 8.89 (.350)


    OCR Scan
    PDF MCA11G1 H11G1) H11G2) H11G3) MCA11G1 MCA11G2 MCA11G2 H11G1, H11G2, H11U

    h11g1 case 730c-04

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR! TECHNICAL DATA TO Q VD € Ul CSA SETI <§> ® SEMKO DEMKO H11G1* H11G2* H11G3 NEM KO [CTR . 1000% M in] 6-Pin D IP O ptoisolators Darlington Output On-Chip R esistors [CTR = 1000% Min] [CTR * 200% Min] ‘ M otorola P referred


    OCR Scan
    PDF H11G1, H11G2 H11G3 H11G1 H11G2-- H11G1 H11G1* H11G2* H11G3 h11g1 case 730c-04

    NPN Silicon Phototransistor

    Abstract: No abstract text available
    Text: O ptoisolator Specifications H11G1, H11G2 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H U G series consists o f a gallium arsenide, infrared em itting diode coupled with a silicon Darlington-connected


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    PDF H11G1, H11G2 NPN Silicon Phototransistor

    h11q

    Abstract: H11Q1 bvx diode K30H M11G2
    Text: HIGH VOLTAGE PHOTQDARUNGTON OPTOCOUPLERS OPlßELEUHRICS H11G1 H11G2 The H11G1 and M11G2 are the photodarlmgton-type optically coupled oploisoialors. Both devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has


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    PDF H11G1 H11G2 M11G2 C2083 C1706 C1707 C1708 h11q H11Q1 bvx diode K30H

    C1708

    Abstract: C1707 C1706 C2083 C208-3 H11G1 H11G2
    Text: pT| HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS •ÉBEM Â. OPTOELECTRONICS H11G1 H11G2 PACKAGE DIMENSIONS DESCRIPTION d bÆ Æ The H11G1 and H11G2 are the photodarlington-type optically coupled optoisolators. Both devices have a gallium arsenide infrared emitting diode coupled with a


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    PDF H11G1 H11G2 H11G2 C2083 C1706 C1707 C1708 C1708 C1707 C1706 C2083 C208-3

    C2083

    Abstract: C1708 ST1603-02 C1706 C1707 H11G1 H11G2
    Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS OPTD E L E t l f l O H I C S H11G1 H11G2 PACKAGE DIMENSIONS db [& DESCRIPTION i & r ~ O 7.62 MAX 0.41 6.35 REF 03 1 0.2 8.3 BEF The H11G1 and H11G2 are the photodarlington-type optically coupled optoisolators. Both devices have a


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    PDF H11G1 H11G2 E90700 C1705 C1706 C1707 C2083 C1708 ST1603-02