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    GT100DA120 Search Results

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    GT100DA120 Price and Stock

    Vishay Semiconductors VS-GT100DA120UF

    IGBT MOD 1200V 187A 890W SOT227
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    DigiKey VS-GT100DA120UF Bulk 160 1
    • 1 $37.2
    • 10 $28.629
    • 100 $37.2
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    Vishay Semiconductors VS-GT100DA120U

    IGBT MOD 1200V 258A 893W SOT227
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    DigiKey VS-GT100DA120U Bulk 180
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    Microchip Technology Inc APTGT100DA120T1G

    IGBT MODULE 1200V 140A 480W SP1
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    DigiKey APTGT100DA120T1G Bulk 17
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    • 100 $64.89
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    Avnet Americas APTGT100DA120T1G Tube 27 Weeks 17
    • 1 $63.5922
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    • 100 $54.71794
    • 1000 $53.85286
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    Mouser Electronics APTGT100DA120T1G
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    Newark APTGT100DA120T1G Bulk 17
    • 1 $64.89
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    • 100 $47.59
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    Microchip Technology Inc APTGT100DA120T1G 27 Weeks
    • 1 $64.89
    • 10 $64.89
    • 100 $47.59
    • 1000 $43.26
    • 10000 $40.67
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    NAC APTGT100DA120T1G Tube 5
    • 1 $61.8
    • 10 $61.8
    • 100 $56.92
    • 1000 $52.76
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    Master Electronics APTGT100DA120T1G
    • 1 -
    • 10 $61.28
    • 100 $58.21
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    Vishay Intertechnologies VS-GT100DA120UF

    Modules IGBT - SOT-227 IGBT (Alt: VS-GT100DA120UF)
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    Avnet Americas VS-GT100DA120UF 12 Weeks 160
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    • 1000 $29.0379
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    Mouser Electronics VS-GT100DA120UF 382
    • 1 $37.2
    • 10 $28.71
    • 100 $28.7
    • 1000 $28.34
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    Newark VS-GT100DA120UF Bulk 103 1
    • 1 $40.7
    • 10 $36.26
    • 100 $31.96
    • 1000 $31.96
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    TTI VS-GT100DA120UF Tube 160
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    • 1000 $28.14
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    TME VS-GT100DA120UF 1
    • 1 $58.81
    • 10 $48.35
    • 100 $41.28
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    ComSIT USA VS-GT100DA120UF 8
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    EBV Elektronik VS-GT100DA120UF 13 Weeks 10
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    Vishay Intertechnologies VS-GT100DA120U

    Igbt Single Transistor, 258 A, 1.73 V, 893 W, 1.2 Kv, Sot-227, 4 |Vishay VS-GT100DA120U
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    Newark VS-GT100DA120U Bulk 180
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    GT100DA120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		PDF GT100DA120U OT-227 E78996 2002/95/EC 18-Jul-08 GT100DA120U

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		PDF GT100DA120U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA120U

    GT100DA120U

    Abstract: gt100da120 A5034 gt100 GT100DA
    Text: GT100DA120U Vishay High Power Products Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		PDF GT100DA120U OT-227 2002/95/EC 18-Jul-08 GT100DA120U gt100da120 A5034 gt100 GT100DA

    vs-gt100da120u

    Abstract: No abstract text available
    Text: VS-GT100DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		PDF VS-GT100DA120U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 vs-gt100da120u

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		PDF GT100DA120U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA120U

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		PDF GT100DA120U OT-227 2002/95/EC 18-Jul-08 GT100DA120U

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		PDF GT100DA120U OT-227 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GT100DA120U