Untitled
Abstract: No abstract text available
Text: Rev. 0. GoldStar GMM791000BNS-60/70/80 1,048,576 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE GOLDSTAR ELECTRON CO., LTD. Description Features The GMM791000BNS is a 1M x 9 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin
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GMM791000BNS-60/70/80
GMM791000BNS
GM71C4400BJ,
71C1000BJ,
GMM791000BNS
067f1
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ras 0515
Abstract: BNS-60
Text: LG Semicon. Co. LTD. Description Features The GMM781000BNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package. The GMM781000BNS is a socket type memory module, suitable for easy change or addition
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GMM781000BNS
GM71C4400BJ,
GMM781000BNS
GM71C4400B
GMM781000BNS-60
GMM781000BNS-70
GMM781000BNS-80
0DD74Q5
ras 0515
BNS-60
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GM71C4400BJ
Abstract: GM71C4400 GM71C1000 GM71C4 GMM791000
Text: @ LG Semicon. Co. LTD. Description Features The GMM791000BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and 1M bit DRAM (GM71C1000BJ, lM x l) in 20 pin SOJ package. The GMM791000BNS is a
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GMM791000BNS
GM71C4400BJ,
GM71C1000BJ,
GMM791000BNS
GM71C4400BJ
GM71C4400
GM71C1000
GM71C4
GMM791000
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GMM791100BNS70
Abstract: ras 0515 irp 540
Text: @ LG Semicon. Co. LTD. Description Features The GMM791100BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and lM xl DRAM in 20 pin SOJ package. The GMM791100BNS is a socket type memory
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GMM791100BNS
GM71C4400BJ,
GMM791100BNS-60
GMM791100BNS-70
GMM791100BNS70
ras 0515
irp 540
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GM71C4400BJ
Abstract: GM71C4400 gm71c4400b
Text: @ LG Semicon. Co. LTD Description Features The GMM781100BNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package. The GMM781100BNS is a socket type memory module, suitable for easy change or addition
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GMM781100BNS
GM71C4400BJ,
GMM781100BNS
GM71C4400B
GMM7811OOBNS-60
GMM781100BNS-70
GMM781100BNS-80
88888888fo
GM71C4400BJ
GM71C4400
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Untitled
Abstract: No abstract text available
Text: Rev. 0. G M M 7 3 21000B S /B S G -60/70/80 G oldStar 1 ,0 4 8 ,5 7 6 W O R D S x 3 2 B IT G M M 7322000B S /B S G 6 0 /7 0 /8 0 GOLDSTAR ELECTRON CO., LTD. 2 ,0 9 7 ,1 5 2 W O R D S x 3 2 BIT CMOS D YN AM IC RAM M O D U LE Description Features The GM M 7321000BS/BSG is a iM x 3 2 bits dy
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21000B
7322000B
7321000BS/BSG
7322000BS/BSG
000DQ
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71C4400Bj
Abstract: No abstract text available
Text: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 71C4400BJ, 1M x 4 sealed in 2 pin
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GMM781000BN
S-60/70/80
781000BN
71C4400BJ,
4400BJ
0003fl2fl
GMM781000BNS
M0267S7
71C4400Bj
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GM71C18160AJ7
Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
Text: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I
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GM71C1000B-60
GM71C
1OO0BJ-60
1000BZ-60
100OBL-6O
1000BLJ-60
GM71C1000BLZ-60
GM71C18160AJ7
GM71C4260AJ70
GM71C4400BJ60
GM71C4400BJ70
gm71c4100cj60
GM71C1000BJ70
GM76C256ALL-70
GM76C256BLLFW70
GM71C4100BJ70
GM76C88ALFW15
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Untitled
Abstract: No abstract text available
Text: GMM781100BNS-60/70/80 LG Semicon Co.,Ltd. 1,048,576 W O R D S x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The G M M 781100B N S is an 1M x 8 bits D ynam ic R A M M odule w hich is assem bled 2 • H igh D ensity Standard 30 pin m ounting 2 pcs o f 4 M D R A M G M 71C 4400B J SO J
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GMM781100BNS-60/70/80
781100B
4400B
Cyc81100BNS
GMM781100BNS
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GM71C4400B
Abstract: GM71C4400BJ GM71C4400 GM71C4100C GM71C4100 GM71C44 gm71c4400bz
Text: @ LG Semicon. Co. LTD. Description Features The GM71C4400B/BL is the new generation dynamic RAM organized 1,048,576 x 4 bit. GM71C4400B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The
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GM71C4400B/BL
300mil
20pin
400mil
GM71C4400B
GM71C4400BJ
GM71C4400
GM71C4100C
GM71C4100
GM71C44
gm71c4400bz
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GM76C88AL FW
Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20
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GM71C1000B/BJ/BZ-60
GM71C1000B/BJ/BZ-70
GM71C1Q0
B/BJ/BZ-80
GM71C1000BL/BLJ/BLZ-60
GM71C1OOOBL/BLJ/BLZ-
GM71C1000BL/BIJ/BLZ-80
200uA)
512cydes/8ms
18DIP
GM76C88AL FW
71C4260
GM71G
GM76C28A
GM23C32000
LR-80
CLR-80
HR80
Tlr8
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Untitled
Abstract: No abstract text available
Text: G M M 7 401000B S /B S G -60/70/80 GoldStar 1,048,576 WORDS x 40 BIT G M M 740200 0 B S /B S G -6 0 /7 0 /8 0 2,097,152 WORDS x 40 BIT GOLDSTAR ELECTRON CO, LTD. CMOS DYNAMIC RAM MODULE Description Features The GMM7401000BS/BSG is a 1M x 40 bits dy namic RAM MODULE which is assembled 10
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401000B
GMM7401000BS/BSG
GMM7402000BS/BSG
GMM7401OOOBS/BSG
GMM7402000BS/BSG
GMM7401000BS/BSG(
REF1750
R62Q57)
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Untitled
Abstract: No abstract text available
Text: Rev 0. GMM7361000BS/BSG-60/70/80 GMM7361000BSS/BSGS-60/70/80 GoldStar 1,048,576 WORDS x 36 BIT GOLDSTAR ELECTRON CO., LTD. GMM7362000BS/BSG-60/70/80 2,097,152 WORDS x 36 BIT/CMOS DYNAMIC RAM MODULE Description Features The GMM7361000BSG/BSGS is a 1M x 36 bits dy
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GMM7361000BS/BSG-60/70/80
GMM7361000BSS/BSGS-60/70/80
GMM7362000BS/BSG-60/70/80
GMM7361000BSG/BSGS
GMM7362000BS/BSG
1IV13Q-
JliJULNJL1111111
IJ11IUI11IL!
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GMM791000BNS70
Abstract: GMM791000BNS-70 GMM791000 791000BNS-60
Text: GMM791000BNS-60/70/80 LG S e m ic o n C o .,L td . Description Features The G M M 791000B N S is an 1M x 9 bits D ynam ic R A M M odule w hich is assem bled 2 pieces o f 4M bit D R A M G M 71C 4400B J, 1M x 4 sealed in 20 pin S O J package and 1M bit D R A M (G M 71C 1000B J, I M x l) in 20 pm
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GMM791000BNS-60/70/80
791000B
4400B
1000B
GMM791000BNS
GMM791000BNS
GMM791000BNS70
GMM791000BNS-70
GMM791000
791000BNS-60
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GMM781000BNS
Abstract: 71C4400B 7IC4400BJ BNS-70
Text: GMM781000BNS-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 W O R D S x 8 BIT CMOS DYNAMIC RAM MODULE Features 1 H igh D ensity Standard 30 pin m ounting 2 pcs o f 4M D R A M G M 7 1C 4400B J SO J T he G M M 781000B N S is an 1M x 8 bits D ynam ic R A M M odule w hich is assem bled 2
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GMM781000BNS
4400B
781000B
GMM781000BNS-60/70/80
GMM781000BNS
71C4400B
7IC4400BJ
BNS-70
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GM71C4400BJ70
Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
Text: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80
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71C1000B-70
1OOOBJ-70
71C1000BZ-70
71C1000B-80
1OOOBJ-80
71C1000BZ-80
71C1000BL-80
1000B
I000H
GM71C1000B-60
GM71C4400BJ70
GM71C4400BLT70
GM71C4100CJ60
GM76C256BLL-70
GM76C8128ALLFW70
GM71C4100CJ70
1gm7
GM76C256BLL70
GMM7362000BSG-70
76C256
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