AM27C128
Abstract: zi11
Text: ADV MI C RO MEMORY 4 ÔE D 055752Û 003G327 1 «AMD4 T -4 6 -1 3-29 & Advanced Micro Devices Am27C128 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tlme-55 ns JEDEC-approved pinout ■ Low power consumption: -1 0 0 pA maximum standby current
|
OCR Scan
|
PDF
|
003G327
T-46-13â
Am27C128
tlme-55
128K-bit,
T-46-13-29
1420-009A
zi11
|
Untitled
Abstract: No abstract text available
Text: KM416V1200BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
|
OCR Scan
|
PDF
|
KM416V1200BJ
1Mx16
416V1200BJ)
003072D
3D721
|
GG3Q
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N » E OPA128 1 Difet Electrometer-Grade OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • ULTRA-LOW BIAS CURRENT: 75fA max LOW OFFSET : SOO^V max
|
OCR Scan
|
PDF
|
OPA128
110dB
AD515
AD549
OPA128
100fA
17313b5
SD-020-11-21-011
GG3Q
|
Untitled
Abstract: No abstract text available
Text: KM4 1 6C2 5 4 DT CMOS D R AM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
|
OCR Scan
|
PDF
|
256Kx16
KM416C254DT
00304flb
|
Untitled
Abstract: No abstract text available
Text: KM416V1004BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a lamily of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
|
OCR Scan
|
PDF
|
KM416V1004BT
1Mx16
|
Untitled
Abstract: No abstract text available
Text: Preliminary KM68FU1000, KM68FS1000, KM68FR1000 Family CMOS SRAM 128Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION Process Technology : 0.4 um Full CMOS The KM68FU1000, KM68FS1000 and KM68FR1000 Organization : 128K x 8
|
OCR Scan
|
PDF
|
KM68FU1000,
KM68FS1000,
KM68FR1000
128Kx8
KM68FU1000
KM68FS1000
32-SOP,
32-TSOP
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VHCT08F/FN/FS TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT08F, TC74VHCT08FN, TC74VHCT08FS QUAD 2 -INPUT AND GATE The TC74VHCT08 is an advanced high speed CMOS 2INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ila r to
|
OCR Scan
|
PDF
|
TC74VHCT08F/FN/FS
TC74VHCT08F,
TC74VHCT08FN,
TC74VHCT08FS
TC74VHCT08
CH724Ã
DD3D113
14PIN
200mil
|
SGS30DA060
Abstract: SGS30DA060D
Text: 3QE D • 7 ^ 2 3 7 QG30bb0 1 ■ '’ ~ P 3 V ? * 5 ' rZZ SCS-THOMSON ^ 7 # s 6 ^ _ S G S 3 0 D A 0 60D c s m ’T j o m s o n NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS ■ LOW Rih JUNCTION TO CASE ■ FREEWHEELING DIODE
|
OCR Scan
|
PDF
|
QG30bb0
O-240)
PC-029«
SGS30DA060
SGS30DA060D
|
6N0 953 235
Abstract: No abstract text available
Text: Preliminary Data Sheet microelectronics group Lucent Technologies Bell Labs Innovations ORCA OR3Cxx 5 V and OR3Txxx (3.3 V) Series Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 nm 4-level metal technology, with a migration plan to 0.25 urn
|
OCR Scan
|
PDF
|
16-bit
208-Pin
240-Pin
256-Pin
352-Pin
432-Pin
600-Pin
PS208
PS240
BA256
6N0 953 235
|
HXD BUZZER
Abstract: No abstract text available
Text: N E C ELECTRONICS INC NEC Electronics Inc. fc,7E J> • b457525 OüBTHfil 3TQ « N E C E JUPD78064 Family frfPD78062/063/064/P064 8-Bit, K-Series Microcontrollers With LCD Controller/Driver, UART, and A/D Converter September 1993
|
OCR Scan
|
PDF
|
b457525
JUPD78064
frfPD78062/063/064/P064)
JUPD78062,
pPD78063,
/PD78064,
PD78P064
100-Pin
P100GF-65-3BA)
83YL-5S11B
HXD BUZZER
|
Untitled
Abstract: No abstract text available
Text: KA2410 Telephone ELECTRONICS INTRODUCTION The KA2410/KA2411 is a bipolar integrated circuit designed for telephone bell replacement. FUNCTIONS • Two oscillators • Output amplifier • Power supply control circuit FEATURES • • • » • • • •
|
OCR Scan
|
PDF
|
KA2410
KA2410/KA2411
KA2410)
KA2411
00307bS
KA2410
|
GG3Q
Abstract: No abstract text available
Text: TOSHIBA TC74VHCT138AF/AFN/AFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT138AF, TC74VHCT138AFN, TC74VHCT138AFT 3 -T O -8 L IN E DECODER The TC74VHCT138 is an advanced high speed CMOS 3 - TO - 8 LINE DECODER fabricated with silicon gate C2MOS
|
OCR Scan
|
PDF
|
TC74VHCT138AF/AFN/AFT
TC74VHCT138AF,
TC74VHCT138AFN,
TC74VHCT138AFT
TC74VHCT138
3012b
16PIN
OP16-P-3QO-1
GG3Q
|