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Microchip Technology Inc GC4374-00 Si NIP Non Hermetic Chip, Projected EOL: 2044-08-15
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Microchip Technology Inc	GC4374-00			16 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc GC4374-150A Si NIP Non Hermetic EPSM SMT, Projected EOL: 2044-08-15
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Microchip Technology Inc	GC4374-150A			18 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now

GC4374 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GC4374		Unknown	Shortform Semicon, Diode, and SCR Datasheets		Short Form	PDF

GC4374 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: GC4374-35 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 70 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.0.5 @If (A)20m Ct{Cj} Nom. (F) Junction Cap.0.4p Carrier Lifetime (S)70n @I(F) (test) (A)10m @I(R) (A) (Test Condition)6.0m	Original	PDF	GC4374-35 -10mA
Untitled Abstract: No abstract text available Text: GC4374-30 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 70 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.0.5 @If (A)20m Ct{Cj} Nom. (F) Junction Cap.0.4p Carrier Lifetime (S)70n @I(F) (test) (A)10m @I(R) (A) (Test Condition)6.0m	Original	PDF	GC4374-30 -10mA
GC4310 Abstract: GC4311 GC4371 GC4372 GC4373 GC4374 GC4375 GC4200 Text: GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes TM RoHS Compliant KEY FEATURES The GC4300 series are high speed anode base NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by	Original	PDF	GC4310 GC4375 GC4300 18Ghz GC4310 GC4311 GC4371 GC4372 GC4373 GC4374 GC4375 GC4200
Untitled Abstract: No abstract text available Text: GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes TM RoHS Compliant K EY FEAT U RES The GC4300 series are high speed anode base NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by	Original	PDF	GC4310 GC4375 GC4300 18Ghz