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    GB01SHT12-CAU SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB01SHT12-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SHT12-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *


    Original     		PDF GB01SHT12-CAU GB01SHT12-CAU. 05-SEP-2013 GB01Semperature GB01SHT12 88E-18 90E-11 00E-10 GB01SHT12-CAU SPICE high-temperature-sic-bare-die

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GB01SHT12-CAU Silicon Carbide Power Schottky Diode Chip Features •       1200 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original     		PDF GB01SHT12-CAU TEMP-24) GB01SHT12 88E-18 90E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GB01SHT12-CAU High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 1200 V 2.5 A 6 nC Features •        1200 V Schottky rectifier 250°C maximum operating temperature Zero reverse recovery charge


    Original     		PDF GB01SHT12-CAU Mil-PRF-19500 parall99) GB01SHT12 88E-18 90E-11 00E-10 00E-03