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GeneSic Semiconductor Inc GB01SHT12-CAL SiC Schottky Diodes SiC 1200V 1A 225DegC AI Top and Au Bottom
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	GB01SHT12-CAL					1 - 10 - 100 $91.81 1000 $91.81 10000 $91.81	Get Quote
Navitas Semiconductor GB01SHT12-CAU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	GB01SHT12-CAU					1 - 10 - 100 $125.49 1000 $125.49 10000 $125.49	Buy Now
Navitas Semiconductor GB01SHT12-CAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	GB01SHT12-CAL					1 - 10 - 100 $87.08 1000 $87.08 10000 $87.08	Buy Now

GB01SHT12 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
GB01SHT12-CAU SPICE Abstract: high-temperature-sic-bare-die Text: Die Datasheet GB01SHT12-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SHT12-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *	Original	PDF	GB01SHT12-CAU GB01SHT12-CAU. 05-SEP-2013 GB01Semperature GB01SHT12 88E-18 90E-11 00E-10 GB01SHT12-CAU SPICE high-temperature-sic-bare-die
Untitled Abstract: No abstract text available Text: Electrical Datasheet* GB01SHT12-CAL Silicon Carbide Power Schottky Diode Chip Features •       1200 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	PDF	GB01SHT12-CAL TEMP-24) GB01SHT12 88E-18 90E-11 00E-10 00E-03
Untitled Abstract: No abstract text available Text: Die Datasheet GB01SHT12-CAU High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 1200 V 2.5 A 6 nC Features •        1200 V Schottky rectifier 250°C maximum operating temperature Zero reverse recovery charge	Original	PDF	GB01SHT12-CAU Mil-PRF-19500 parall99) GB01SHT12 88E-18 90E-11 00E-10 00E-03
GB01SHT12-CAL SPICE Abstract: high-temperature-sic-bare-die Text: Die Datasheet GB01SHT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SHT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *	Original	PDF	GB01SHT12-CAL GB01SHT12-CAL. 05-SEP-2013 GB01Semperature GB01SHT12 88E-18 90E-11 00E-10 GB01SHT12-CAL SPICE high-temperature-sic-bare-die
Untitled Abstract: No abstract text available Text: Electrical Datasheet* GB01SHT12-CAU Silicon Carbide Power Schottky Diode Chip Features •       1200 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	PDF	GB01SHT12-CAU TEMP-24) GB01SHT12 88E-18 90E-11 00E-10 00E-03
Untitled Abstract: No abstract text available Text: Die Datasheet GB01SHT12-CAL High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 1200 V 2.5 A 6 nC Features •        1200 V Schottky rectifier 250°C maximum operating temperature Zero reverse recovery charge	Original	PDF	GB01SHT12-CAL Mil-PRF-19500 parall99) GB01SHT12 88E-18 90E-11 00E-10 00E-03