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    GAAS FET SOT89 Search Results

    GAAS FET SOT89 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    GAAS FET SOT89 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HWL30NPA L-Band GaAs Power FET Autumn 2002 V1 Features • Low Cost GaAs Power FETs • Class A or Class AB Operation • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description 2 1 3 The HWL30NPA is a Medium Power GaAs FET using


    Original     		PDF HWL30NPA HWL30NPA

    70808

    Abstract: 82645 56260 0117 0317 HWL26NPA 104780 107867 lS12l GaAs FET sot89 78045
    Text: HWL26NPA L-Band GaAs POWER FET Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Outline Dimensions 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description


    Original     		PDF HWL26NPA HWL26NPA 70808 82645 56260 0117 0317 104780 107867 lS12l GaAs FET sot89 78045

    SHF-0189Z

    Abstract: SHF0189Z
    Text: SHF0189Z SHF0189Z 0.05Ghz to 6GHz, 0.5Watt GaAs HFET 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF0189Z is a high performance AIGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET


    Original     		PDF SHF0189Z 05Ghz SHF0189Z OT-89 27dBm 100mA. 40dBm SHF-0189Z

    SHF-0289Z

    Abstract: SHF0289Z GaAS fet sot89 SHF0289ZSQ
    Text: SHF0289Z SHF0289Z 0.05GHz to 6GHz, 1.0Watt GaAs HFET 0.05GHz to 6GHz, 1.0WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF0289Z is a high performance AIGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves


    Original     		PDF SHF0289Z 05GHz SHF0289Z OT-89 30dBm 200mA. 43dBm SHF-0289Z GaAS fet sot89 SHF0289ZSQ

    SHF-0289

    Abstract: SHF0289Z marking H2Z sot-89 SHF-0289Z GaAS fet sot89 GaAs FET operating junction temperature 0289 marking h2 sot-89 140C .H2 MARKING SOT-89
    Text: SHF-0289 Z SHF-0289(Z) 0.05GHz to 6GHz, 1.0Watt GaAs HFET 0.05GHz to 6GHz, 1.0WATT GaAs HFET RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SHF-0289 is a high performance AIGaAs/GaAs Heterostructure FET (HFET)


    Original     		PDF SHF-0289 05GHz OT-89 30dBm 200mA. 43dBm SHF0289Z marking H2Z sot-89 SHF-0289Z GaAS fet sot89 GaAs FET operating junction temperature 0289 marking h2 sot-89 140C .H2 MARKING SOT-89

    SHF0189Z

    Abstract: SHF-0189Z H1 SOT-89 fet MARKING RFMD H1 SOT-89 transistor rf SHF-0189 lot code RFMD H1 SOT-89
    Text: SHF-0189 Z SHF-0189(Z) 0.05Ghz to 6GHz, 0.5Watt GaAs HFET 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF-0189 is a high performance AIGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET


    Original     		PDF SHF-0189 05Ghz OT-89 27dBm 100mA. 40dBm SHF0189Z SHF-0189Z H1 SOT-89 fet MARKING RFMD H1 SOT-89 transistor rf lot code RFMD H1 SOT-89

    FP101-G

    Abstract: f101g GaAS fet sot89 FP101 JESD22-A114 LL1608-FH MARKING CODE 51 5 fet sot-89 marking 9721
    Text: FP101 The Communications Edge TM High Dynamic Range FET Product Description Functional Diagram The FP101 is a high dynamic range GaAs FET packaged in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point


    Original     		PDF FP101 FP101 OT-89 Lead-free/Gre14 1-800-WJ1-4401 FP101-G f101g GaAS fet sot89 JESD22-A114 LL1608-FH MARKING CODE 51 5 fet sot-89 marking 9721

    MARKING CODE 51 5 fet sot-89

    Abstract: f101g FP101 FP101-G High Dynamic Range FET sot-89 SOT89 FET marking sot89 Marking code fp101
    Text: FP101 The Communications Edge TM High Dynamic Range FET Product Description Functional Diagram The FP101 is a high dynamic range GaAs FET packaged in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point


    Original     		PDF FP101 OT-89 FP101 1-800-WJ1-4401 MARKING CODE 51 5 fet sot-89 f101g FP101-G High Dynamic Range FET sot-89 SOT89 FET marking sot89 Marking code fp101

    KGF1637

    Abstract: GaAS fet sot89
    Text: This version: Jan. 1998 Previous version: Jun. 1996 E2Q0035-27-X3 ¡ electronic components KGF1637 ¡ electronic components KGF1637 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1637, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


    Original     		PDF E2Q0035-27-X3 KGF1637 KGF1637, OT-89 KGF1637 GaAS fet sot89

    KGF1633

    Abstract: GAAS FET AMPLIFIER 3400 Mhz
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0034-38-72 ¡ electronic components KGF1633 ¡ electronic components KGF1633 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


    Original     		PDF E2Q0034-38-72 KGF1633 KGF1633, OT-89 KGF1633 GAAS FET AMPLIFIER 3400 Mhz

    KGF1631

    Abstract: No abstract text available
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0033-38-72 ¡ electronic components KGF1631 ¡ electronic components KGF1631 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1631, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


    Original     		PDF E2Q0033-38-72 KGF1631 KGF1631, OT-89 KGF1631 24dBm

    KGF1638

    Abstract: GaAS fet sot89 112MA1 marking HD SOT89
    Text: This version: Jan. 1998 Previous version: Jun. 1996 E2Q0036-27-X3 ¡ electronic components KGF1638 ¡ electronic components KGF1638 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1638, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


    Original     		PDF E2Q0036-27-X3 KGF1638 KGF1638, OT-89 KGF1638 High33 GaAS fet sot89 112MA1 marking HD SOT89

    Untitled

    Abstract: No abstract text available
    Text: AM048MX-89-R Plastic Packaged GaAs Power FET April 2010 Rev 3 DESCRIPTION AMCOM’s AM048MX-89-R is part of SOT-89 Series of GaAs MESFETs. This part has a total gate width of 4.8 mm. The AM048MX-89-R is designed for high power microwave applications, operating up to 5 GHz.


    Original     		PDF AM048MX-89-R AM048MX-89-R OT-89 32dBm

    Untitled

    Abstract: No abstract text available
    Text: HWL30NPA 1234567 7 849A7BCDEF77 Autumn 2002 V1 Features • Low Cost GaAs Power FETs • Class A or Class AB Operation • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description1 2 1 3 The HWL30NPA is a Medium Power GaAs FET using


    Original     		PDF HWL30NPA 849A7BCDEF7 HWL30NPA

    Stanford SHF-0289

    Abstract: SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189
    Text: Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


    Original     		PDF SHF-0289 30dBm 250mA. EDS-101241 Stanford SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189

    an 17830

    Abstract: S3V 83 an 17830 a
    Text: HEXAWAVE HWL30NPA Hexawave, Inc. L-Band Medium Power GaAs FET Description Outline Dimensions The HWL30NPA is a Medium Power GaAs FET using surface mount type plastic package for various L-band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.


    OCR Scan     		PDF HWL30NPA HWL30NPA 300mA an 17830 S3V 83 an 17830 a

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor KGF1637_ Plastic GaAs Power FET for FM and FDMA Cellular Applications DESCRIPTION The KGF1637 is a high power, high efficiency GaAs power FET that features high gain at high current w ith ultra low im pedance drive required for cellular, ISM, PH S and PCS applications. This device is


    OCR Scan     		PDF KGF1637_ KGF1637 OT-89 b72424D KGF1637 h72424D b72MBM0

    cq 0765

    Abstract: CQ 419 MARKING E2B KGF1638 0765 cq Ta 7210 p
    Text: O K I Semiconductor KGF1638 Plastic GaAs Power FET for GSM and TDMA Applications D E S C R IP T IO N The KGF1638 is a high power, high efficiency GaAs power FET that features high gain at high currents w ith ultra low im pedance drive required for cellular, ISM , PHS and PCS applications. This device is


    OCR Scan     		PDF KGF1638_ KGF1638 OT-89 33dBm) b724B40 KGF1638 242M0 cq 0765 CQ 419 MARKING E2B 0765 cq Ta 7210 p

    Untitled

    Abstract: No abstract text available
    Text: E2Q0034-38-72 This version: Jul. 1998 Previous version: Jan. 1998 O K I electronic components_ KGF1633_ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


    OCR Scan     		PDF E2Q0034-38-72 KGF1633_ KGF1633, OT-89 KGF1633 KGF1633

    qs marking sot-89

    Abstract: No abstract text available
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0033-38-72 O K I electronic components_ KGF1631_ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1631, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


    OCR Scan     		PDF E2Q0033-38-72 KGF1631_ KGF1631, OT-89 KGF1631 24dBm KGF1631 qs marking sot-89

    KGF1633

    Abstract: zo 607
    Text: E2Q0034-38-72 This version: Jul. 1998 Previous version: Jan. 1998 OKI electronic components_ KGF1 6 3 3 _ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


    OCR Scan     		PDF E2Q0034-38-72 KGF1633_ KGF1633, OT-89 KGF1633 KGF1633 zo 607

    80247

    Abstract: No abstract text available
    Text: HEXAWAVS HWL32NPA Hexawave, Inc. L-Band Power GaAs F ET Outline Dimensions Description The HWL32NPA is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz MHz cellular/wireless applications.


    OCR Scan     		PDF HWL32NPA HWL32NPA 80247

    AS15D

    Abstract: sot89 fet GaAs FET sot89 FET SOT89 ANCLC2R45J100AAA
    Text: MICROWAVE PRODUCTS m u ffa ta GaAs FET/Antenna •Small Signal FET XMFS Series Parts Number j XMFS2-M1 Package Main Characteristics Application Plastic F m in= 0.4 dB @ 2G H zi Gas— ^ d B DBS Oscillator LNA (PCS. PDC, PHS F m in= 0.4 dB (@2GHz) G as=15dB


    OCR Scan     		PDF T-143) OT-89) Po--23dBm LDA36A1907A ANACLC1R90J025AAA R89J020AAa ANACGC1R48U024AAC AS15D sot89 fet GaAs FET sot89 FET SOT89 ANCLC2R45J100AAA

    J473

    Abstract: TA 70/04 D02S KGF1637 3144 0842 K 7256 M
    Text: O K I Semiconductor KGF1637_ Plastic GaAs Power FET for FM and FDMA Cellular Applications D E S C R IP T IO N The KGF1637 is a high power, high efficiency G aA s pow er FET that features high gain at high current with ultra low im pedance drive required for cellular, ISM, PH S and PCS applications. This device is


    OCR Scan     		PDF KGF1637 KGF1637 OT-89 72424D 24BMG J473 TA 70/04 D02S 3144 0842 K 7256 M