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    GA01PNS80 Search Results

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    GA01PNS80 Price and Stock

    GeneSic Semiconductor Inc GA01PNS80-220

    RF DIODE PIN 8000V
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    DigiKey GA01PNS80-220 Tube 10
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    NAC GA01PNS80-220 10
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    Navitas Semiconductor GA01PNS80-220

    SiC PIN Diode - 8000V - 1A - TO-220
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    Onlinecomponents.com GA01PNS80-220
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    GA01PNS80 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GA01PNS80-220 GeneSiC Semiconductor Discrete Semiconductor Products - Diodes - RF - DIODE SILICON CARBIDE 8KV Original PDF

    GA01PNS80 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: GA01PNS80-220 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA01PNS80-220. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.1 $ * $Date: 30-APR-2015 $ * * GeneSiC Semiconductor Inc.


    Original
    PDF GA01PNS80-220Â GA01PNS80-220. 30-APR-2015 GA01PNS80-220 GA01PNS80 2491e-015 7E-11 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GA01PNS80-CAL Silicon Carbide PiN Diode Chip Features •     8 kV blocking 250 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching Advantages


    Original
    PDF GA01PNS80-CAL

    Untitled

    Abstract: No abstract text available
    Text: GA01PNS80-220 Silicon Carbide PiN Diode VRRM IF Tc=25°C = = 8.0 kV 2A Features •     8 kV blocking 175 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching A Advantages


    Original
    PDF GA01PNS80-220 GA01PNS80-220 GA01PNS80 2491e-015 7E-11 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GA01PNS80-CAL Silicon Carbide PiN Diode Chip VRRM o IF @ 25 C = = 8000 V 2A Features •     8 kV blocking 250 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching


    Original
    PDF GA01PNS80-CAL GA01PNS80-CAL GA01PNS80 2491e-015 7E-11 00E-03

    GA01PNS80-CAU SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GA01PNS80-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA01PNS80-CAU device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.1 $ * $Date: 30-APR-2015 $


    Original
    PDF GA01PNS80-CAU GA01PNS80-CAU 30-APR-2015 GA01PNS80 2491e-015 7E-11 00E-03 GA01PNS80-CAU SPICE high-temperature-sic-bare-die

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GA01PNS80-CAU Silicon Carbide PiN Diode Chip VRRM o IF @ 25 C = = 8000 V 2A Features •     8 kV blocking 250 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching


    Original
    PDF GA01PNS80-CAU GA01PNS80-CAU GA01PNS80 2491e-015 7E-11 00E-03

    GA01PNS80-CAL SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GA01PNS80-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA01PNS80-CAL device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.1 $ * $Date: 30-APR-2015 $


    Original
    PDF GA01PNS80-CAL GA01PNS80-CAL 30-APR-2015 GA01PNS80 2491e-015 7E-11 00E-03 GA01PNS80-CAL SPICE high-temperature-sic-bare-die