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    G10597

    Abstract: pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059 PA1500B
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver.


    Original     		PDF PA1500B PA1500B G10597 pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059

    G10597

    Abstract: uPA1500 IEI-1213 MEI-1202 MF-1134 PA1500BH
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    G10597

    Abstract: transistor tt 2170 7824 3A ifr 641 transistor Bd 945 KL 3383
    Text: / I • A I ÏK INIE C ^r C o m p o u n d F ie ld E ffe c t P o w e r T r a n s is to r /1PA1500 B * N ^ ÿ ^ / \ ° 7 - M -f O S FET y ^ I lf f l H P A 1 5 0 0 B « , 4 VIEÜICDN51 -V * J H É M A ? - M O S F E T £ 4 E lS & rtlc L, £ A ? -M O S FET77 U - i T%


    OCR Scan     		PDF uPA1500B ICDN51 FET77 G10597 transistor tt 2170 7824 3A ifr 641 transistor Bd 945 KL 3383