21140-AF
Abstract: 21140AF 21140 G027 intel 21140
Text: Product Change Notification Product Change Notification: #G027, addendum 1 Please respond to the Intel Contact above if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of change and the change
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21140-AF
21140-AF
21140AF
21140
G027
intel 21140
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Untitled
Abstract: No abstract text available
Text: ADS8028 www.ti.com SBAS549B – MAY 2011 – REVISED MARCH 2012 12-Bit, 1-MSPS, 8-Channel, SAR ADC with Internal Reference and Internal Temperature Sensor Check for Samples: ADS8028 FEATURES DESCRIPTION • The ADS8028 is a 12-bit analog-to-digital converter
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ADS8028
SBAS549B
12-Bit,
QFN-20
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments PCM3002 PCM3003 SBAS079A – OCTOBER 2000 – REVISED OCTOBER 2004 16/20-BIT SINGLE-ENDED ANALOG INPUT/OUTPUT STEREO AUDIO CODECS FEATURES • • • • • • • • • Monolithic 20-Bit ∆Σ ADC and DAC 16/20-Bit Input/Output Data
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PCM3002
PCM3003
SBAS079A
16/20-BIT
20-Bit
PCM3003
PCM3002,
PCM3003)
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s0273
Abstract: ci 4012 S0273-01 S0273-0 s0281 S0274-01 10Log1
Text: THS4021 THS4022 www.ti.com SLOS265C – SEPTEMBER 1999 – REVISED JULY 2007 350-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS FEATURES 1 THS4021 D and DGN Package Top View • Ultralow 1.5-nV/√Hz Voltage Noise • High Speed: – 350-MHz Bandwidth (G = 10, –3 dB)
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THS4021
THS4022
SLOS265C
350-MHz
THS4022
70-V/s
s0273
ci 4012
S0273-01
S0273-0
s0281
S0274-01
10Log1
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GSV1
Abstract: INA223
Text: INA223 www.ti.com SBOS528 – JUNE 2012 Analog Output Current Shunt and Voltage Instantaneous Power Monitor Check for Samples: INA223 FEATURES DESCRIPTION • • • The INA223 is a voltage-output device that monitors the current, bus voltage, and power of a supply line
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INA223
SBOS528
INA223
GSV1
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T4531
Abstract: No abstract text available
Text: THS4531 www.ti.com SLOS358B – SEPTEMBER 2011 – REVISED MARCH 2012 Ultra Low Power, Rail-to-Rail Output, Fully-Differential Amplifier Check for Samples: THS4531 FEATURES DESCRIPTION • The THS4531 is a low-power, fully-differential op amp with input common-mode range below the negative
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THS4531
SLOS358B
THS4531
T4531
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ADS62P4X
Abstract: AZ62P44 voltage stabilizer winding data ADS62P42 ADS62P43 ADS62P44 ADS62P45 DA10 marking lpkg
Text: ADS62P45, ADS62P44 ADS62P43, ADS62P42 www.ti.com . SLAS561B – JULY 2007 – REVISED MAY 2009 DUAL CHANNEL, 14-BITS, 125/105/80/65 MSPS ADC WITH DDR LVDS/CMOS OUTPUTS
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ADS62P45,
ADS62P44
ADS62P43,
ADS62P42
SLAS561B
14-BITS,
14-Bit
ADS62P4X
AZ62P44
voltage stabilizer winding data
ADS62P42
ADS62P43
ADS62P44
ADS62P45
DA10
marking lpkg
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0x2414
Abstract: TAS5711 t0419
Text: TAS5711 www.ti.com SLOS600A – DECEMBER 2009 – REVISED AUGUST 2010 20-W DIGITAL AUDIO-POWER AMPLIFIER WITH EQ, DRC, AND 2.1 MODE Check for Samples: TAS5711 FEATURES 1 • 2 • • Audio Input/Output – 20-W Into an 8-Ω Load From an 18-V Supply – Wide PVDD Range, From 8 V to 26 V
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TAS5711
SLOS600A
48-kHz
24-dB
0x2414
TAS5711
t0419
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DAC5687
Abstract: G003 IS-136 TRF370317 ECJ-0VC1H102J S0338-01 TRF370x
Text: TRF370317 www.ti.com SLWS209B – MARCH 2008 – REVISED JANUARY 2010 0.4-GHz TO 4-GHz QUADRATURE MODULATOR Check for Samples: TRF370317 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • • • • • • 76-dBc Single-Carrier WCDMA ACPR at –8
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TRF370317
SLWS209B
76-dBc
CDMA2000,
IS-136,
EDGE/UWC-136
16d/e
DAC5687
G003
IS-136
TRF370317
ECJ-0VC1H102J
S0338-01
TRF370x
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s0273
Abstract: THS4021 S0282 THS4021CD THS4022 THS4022CD M00320 S0273-0
Text: THS4021 THS4022 www.ti.com SLOS265C – SEPTEMBER 1999 – REVISED JULY 2007 350-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS FEATURES 1 THS4021 D and DGN Package Top View • Ultralow 1.5-nV/√Hz Voltage Noise • High Speed: – 350-MHz Bandwidth (G = 10, –3 dB)
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THS4021
THS4022
SLOS265C
350-MHz
70-V/s
40-ns
17-MHz
s0273
THS4021
S0282
THS4021CD
THS4022
THS4022CD
M00320
S0273-0
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DAC5686
Abstract: DAC5686IPZP IS-136
Text: DAC5686 www.ti.com . SLWS147F – APRIL 2003 – REVISED JUNE 2009 16-BIT, 500-MSPS, 2x–16× INTERPOLATING DUAL-CHANNEL
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DAC5686
SLWS147F
16-BIT,
500-MSPS,
500-MSPS
72-MHz
44-MHz
16-MHz
05-dB
DAC5686
DAC5686IPZP
IS-136
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19848 D Optoelectronic Specifications_ T - u /j. HARRIS SEMIC0N» SECTOR 37E D 430SS71 G02731Q 1 Photon Coupled Isolator C N Y 4 8 M IL L I M E T E R S SW 80L- Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier
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430SS71
G02731Q
CNY48
S-42662
92CS-429S1
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PHOTOTRANSISTOR 3 LEGS
Abstract: GFH600-1 GFH600 S3 UM1 340 opto isolator
Text: HARRIS SEMICOND SECTOR 37E T> 4302271 G027322 fl ESHAS Optoelectronic Specificatio ns_ Photon Coupled Isolator GFH600 Ga As Solid S tate L am p & NPN Silicon Photo-T ransistor T h e G E Solid S ta te G F H 600 consists o f a gallium arsenide infrared
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G027322
GFH600
GFH600
92CS-42862
92CS-428M
PHOTOTRANSISTOR 3 LEGS
GFH600-1
S3 UM1
340 opto isolator
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quadrant photodiode
Abstract: D027455 i380
Text: SIEMENS AKTIENGESELLSCHAF 47E » • fl235bOS G027455 3 « S I E G S IE M E N S SFH204 SILICON FOUR QUADRANT PHOTODIODE T - - H 1- 5 I Package Dimensions in Inches mm — 21 (5.4) 1 8 ( 4 , 5 ) _ - 020 .18 (4,5) 17 (4,3) ^ if_* \r ^ J (0,5) . .30 (7,5)
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fl23SbDS
D027455
T-Hl-51
h1001
-450-W
quadrant photodiode
i380
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Untitled
Abstract: No abstract text available
Text: 01E 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications_ Light Detector 4302571 G02727M 37E D H A RR IS SEillCOND S E CT OR 19812 1 • HAS 7 ^ 4 / - < £ / Planar Silicon Photo Transistor BPW36, BPW37 T he G E Solid S tate BPW 36 and BPW 37 are highly sensitive N P N P lan ar Silicon Phototransistors.
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G02727M
BPW36,
BPW37
92CS-42662
92CS-429S1
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BTW38-600R
Abstract: BTW38 600R 800R 1000R M1386
Text: N AMER PHILIPS/DISCRETE t.'ìE J> m ^53=131 G027355 3T3 H A P X BTW38 SERIES THYRISTORS Glass-passivated silicon th y ris to rs in m etal envelopes, intended fo r use in pow er c o n tro l c ircu its e.g. lig h t and m o to r c o n tro l and pow er sw itching systems.
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G027355
BTW38
BTW38â
1000R.
1000r
BTW38-600R.
BTW38-600R
600R
800R
1000R
M1386
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Phototransistor SFH 600-2
Abstract: d2727 din 40040 humidity 202E DIN57471 SFH600 VDE0110 VDE0471 Siemens optocoupler IL K 4080
Text: SIEMENS AKTIENGESELLSCHAF 47E ß • 023SbG5 S IE M E N S G02727Û 7 ■ SIEG SFH600 SERIES PHOTOTRANSISTOR OPTOCOUPLER Package Dimension in Inches mm 307(7.8) ¿91 (74) t 138(3 5) 130(3 3) .343 (8 T> 335 (SS) .02 _L =1 .256(6-5) .246(6 3) (OS) 142 (3 6)
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623SbG5
GG2727Ã
SFH600
E52744
-X001
Phototransistor SFH 600-2
d2727
din 40040 humidity
202E
DIN57471
VDE0110
VDE0471
Siemens optocoupler IL
K 4080
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Untitled
Abstract: No abstract text available
Text: H A R R IS SEM IC O N D SECTOR 3?E V m 43QE271 G027172 4 I HAS Optoelectronic Specifications Photon C oupled Isolator H11B1,H11B2,H11B3 S Y Ï.B O L - M IN Ga As Infrared E m ittin g D iode & NPN Silicon P hoto-D arlington A m plifier The GE Solid State H 11B 1, H 11B2 and H 11B3 are gallium arsenide,
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43QE271
G027172
H11B1
H11B2
H11B3
S-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 37E D 4 305 27 1 G027332 IHAS Optoelectronic Specifications_ T * - 4 J- S 7 Photon Coupled Isolator MCS2, MCS2400 G a A s I n f r a r e d E m ittin g D io d e & L ig h t A c tiv a te d S C R — SYMBOL* A - A B C D E F G H
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G027332
MCS2400
100/isec
33mW/Â
92CS-42662
92CS-429S1
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OLB 2300
Abstract: No abstract text available
Text: SIEMENS AKTIEN GESELLS CHA F 47E D • aZ35bQ5 G027104 7 ■ SIE6 S IE M E N S SUPER-RED yello w GREEN OLB 2300^^ YLB 2400 GLB 2500 LIGHT BARS P a c k a g e D im e n s io n s in In c h e s m m » L— (1016) — H « » —I MW MM 1 1 1 _« r<J«n PIN FUNCTION
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aZ35bQ5
G027104
2300/YLB
2400/GLB
100nA
OLB 2300
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Siemens photodiode visible light
Abstract: U850 diode U850 SFH 207 C100 859 v5 n40e
Text: SIEMENS AKTIENGESELLSCHAF 47E » • 023SbüS G0274b5 S IE M E N S h «SIE6 SFH207 SILICON PIN PHOTODIODE Package Dimensions mm C ir c u it d ia g r a m -È * FEATURES Maximum Ratings * Package: Chip on PC Board, Fully Encapsulated * High Reliability * No Testable Degradation
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0235bOS
G0274b5
100fl
Siemens photodiode visible light
U850 diode
U850
SFH 207
C100
859 v5
n40e
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1-640098-6
Abstract: 350090-1 7687a
Text: • 07R7312 G027533 b?T ■ AMP D im e n sio n in g : Dim ensions are in inches and millimeters. Values in brackets are metric equivalents. Headers .100 [2.54] Centerline Chart contains dim ensions in inches over millimeters. .025 [0.64] Square Straight Posts
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BC876
Abstract: BC880 BC875 BC877 BC878 BC879 BC879 darlington
Text: N AMER PHILIPS/DISCRETE b'iE D • G027bGS EST BÜÖ7Ö IAPX BC878 BC880 SMALL-SIGNAL DARLINGTON TRANSISTORS PNP epitaxial small-signal Darlington transistors, each in a plastic TO-92 envelope w ith an integrated diode and resistor. They can be used fo r general purpose low frequency applications and as relay drivers etc.
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G027bGS
BC878
BC880
BC875,
BC877,
BC879.
BC876
Pinning00
BC880
BC875
BC877
BC879
BC879 darlington
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID 01E STATE Optoelectronic S p ecificatio n s- HARRI S SEIHCOND 19642 D - T4I-M SECTOR 37E D M 43G2E71 G0271QM Infrared Emitter T • 1N 6264 1N6264,1N6265 Gallium Arsenide Infrared — Em itting Diode T T he G E Solid State 1N6264 and 1N6265 Series are gallium arsenide, light
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43G2E71
G0271QM
1N6264
1N6265
1N6265
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