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    G0227 Search Results

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    G0227 Price and Stock

    Siemens CLM0G02277

    CONTACTOR LTG M-HELD,300A,2NO,OP
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    DigiKey CLM0G02277 Box 1
    • 1 $9519.12
    • 10 $9519.12
    • 100 $9519.12
    • 1000 $9519.12
    • 10000 $9519.12
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    Mouser Electronics CLM0G02277
    • 1 $9519.11
    • 10 $9519.11
    • 100 $9519.11
    • 1000 $9519.11
    • 10000 $9519.11
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    Wima MKP1G022702F00JSC9

    MKP 10 0.027 F 400 VDC 5.7X12.5X
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MKP1G022702F00JSC9 Bulk 6,000
    • 1 -
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    • 10000 $0.21841
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    Wima MKP1G022702F00KF00

    MKP 10 0.027 F 400 VDC 5.7X12.5X
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    DigiKey MKP1G022702F00KF00 Reel 5,000
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    • 10000 $0.19567
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    Mouser Electronics MKP1G022702F00KF00
    • 1 -
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    • 10000 $0.188
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    Wima MKP1G022702F00KC00

    MKP 10 0.027 F 400 VDC 5.7X12.5X
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MKP1G022702F00KC00 Ammo Pack 5,500
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    Mouser Electronics MKP1G022702F00KC00
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.188
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    Wima MKP1G022702F00MF00

    MKP 10 0.027 F 400 VDC 5.7X12.5X
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MKP1G022702F00MF00 Reel 6,000
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    G0227 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EL50P1

    Abstract: ES1000C ES300C Hall Effect Current Sensors ABB ES2000C MP25P1 VD1500-48 1SBT172000R9944 EL55P2 EL25P1
    Text: Technical catalogue Current sensors Voltage sensors Current sensors Voltage sensors Contents Technologies Current measuring technology . 4 Voltage measuring technology . 8


    Original
    PDF F-69685 C0202 EL50P1 ES1000C ES300C Hall Effect Current Sensors ABB ES2000C MP25P1 VD1500-48 1SBT172000R9944 EL55P2 EL25P1

    M1570

    Abstract: M1568 T032-1 BYW93 BYW93-50 BYW93-50U M1569 BVW93
    Text: N AMER PHILIPS/ DISCRET E MAINTENANCE TYPE 2SE D • [=^53^31 G0227Ô3 3 ■ BYW93 SERIES T - 0 3 - 21 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery


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    PDF G0227Ã BYW93 T-03-21 byw93â m1570 m1671 m1572 M1570 M1568 T032-1 BYW93-50 BYW93-50U M1569 BVW93

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet August 1996 mi c r o e l e c t r o n i c s gr oup Lucent Technologies Bell Labs Innovations • Four 10 Mbits/s Ethernet transceivers and MACs integrated together with separate transmit and receive port FIFOs and a single DMA interface simplity the design of a frame-switching hub. Each


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    PDF ATT1MX10 208-Pin ATT1MX10-SC

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI ICs VCR M52357SP/VP FM EQUALIZER DESCRIPTION The M 5 2 3 5 7 has an FM signal e q ualizer fo r p la y b a c k , PIN CONFIGURATION (TOP VIEW) low -p ass and high-pass filte r fo r recording, and recording level adjuster. FEATURES Playback s y s te m


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    PDF M52357SP/VP

    SYW 55

    Abstract: BYW25 BYW25-1000 BYW25-1000R BYW25-800 BYW25-800R LF35
    Text: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE SSE D • bbS3*J31 0055733 T ■ B Y W ü b C s th u tio r-os-/9 F A S T S O F T - R E C O V E R Y R E C T IF IE R D IO D E S Fast soft-recovery diodes in DO-5 metal envelopes especially suitable fo r operation as main and


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    PDF btS3T31 BYW25-800 BYW25-1000. BYW25-800R BYW25-1000R. BYW25â T-03-19 7z77891 BYW25 SYW 55 BYW25-1000 BYW25-1000R LF35

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466F404AS-L DRAM MODULE KMM466F404AS-L EDO Mode without buffer 4Mx64 based on 4Mx16, 4K Refresh, 3.3V, Low power/Self-Refresh G ENERAL DESCRIPTIO N FEATURES The Samsung KMM466F404AS-L is a 4M bit x 64 Dynamic RAM high density memory module. The


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    PDF KMM466F404AS-L KMM466F404AS-L 4Mx64 4Mx16, 466F404AS-L cycles/128ms, 1000mil) DDBE733

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI ICS VCR M52087SP/FP FM INTERFACE DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 52087 processes VCR FM luminance signals. This circuit consists o f an inversion suppressing circuit, SW1 IN SW1 OUT PB Vcc MAIN FM IN GCA2 ADJ BPF IN GND SW2 OUT


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    PDF M52087SP/FP M52087SP 32-pin M52087FP GD227S4 111Tei0ieui DGS27SS

    BYW29

    Abstract: LC1 Clip M2749
    Text: N AMER PHILIPS/DISCRETE 25E ß • bb53T31 □ 02273*1 Q ■ B Y W 2 9 SERIES ^ 7 -0 3 -/7 ULTRA FAST RECO VER Y RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times w ith very low stored charge and soft-recovery


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    PDF bb53T31 G02273Â BYW29 T-03-17 LC1 Clip M2749

    Untitled

    Abstract: No abstract text available
    Text: CHAPTER 3 FUNCTIONS This chapter describes the functions of SPC internal registers, memory, and buffers. 3.1 INTERNAL REGISTERS 3.2 BASIC CONTROL REGISTER 3.3 INITIAL SETTING REGISTER WINDOW 3.4 MCS BUFFER WINDOW 3.5 USER PROGRAM MEMORY WINDOW 3.6 SCAM REGISTER WINDOW


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    PDF 37MT75L. G02275Ã

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PldB = 33.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G idB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


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    PDF TIM8596-2 MW51120196 002271b TIM8596-2

    Untitled

    Abstract: No abstract text available
    Text: 32K x 32, 3.3V SYNCHRONOUS SRAM WITH 3.3V/2.5V PIPELINED OUTPUTS AND INTERLEAVED/LINEAR BURST COUNTER Integrated D evice Technology, Inc. FEATURES: PRELIMINARY IDT71V532 The 1DT71V532 SRAM contains write, data, address, and control registers. Internal logic allows the SRAM to generate


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    PDF IDT71V532 100-pin IDT71BP, 492-M

    M3155

    Abstract: M3160 pp m3155 g0s2710 m3166 BYV133F BYV133F-35 T-03-19
    Text: DEVELOPMENT DATA BYV133F SERIES T h is data shee t con ta in s advance in fo rm a tio n and s p e cifica tio n s are su b je ct to c h an ge w ith o u t notice. N AMER PHILIPS/DISCRETE 25E D • ^53^31 0 0 2570“! 2 ■ . SCHOTTKY-BARRIER ELECTRICALLY-ISOLATED T - Ô 3 - 1 9


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    PDF BYV133F OT-186 bS3131 0DE2717 T-03-19 M3160 M3155 M3160 pp m3155 g0s2710 m3166 BYV133F-35 T-03-19

    BYW29F

    Abstract: No abstract text available
    Text: 25E D N AMER PH ILIPS/DISCRETE • ^53131 002274*1 3 ■ X ' BYW29F SERIES 7 3 0 3 - /7 ULTRA FAST RECOVERY, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in S O T -186 full-pack envelopes, featuring


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    PDF BYW29F inSOT-186 BYW29F- Re2838

    pic with ir sensor

    Abstract: HOA1886-012 infrared sensor with pic
    Text: HOA1886 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Ambient light and dust protective filter • 0.200 in. 5.08 mm slot width INFHA-76.TIF DESCRIPTION The HOA1886 series consists of an infrared emitting diode facing an NPN silicon phototransistor


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    PDF HOA1886 HOA1886-011, HOA1886-013) 002270e! pic with ir sensor HOA1886-012 infrared sensor with pic

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C213BK/BS KMM364C213BK/BS Fast Page Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION The Sam sung KM M 364C213B is a 2M bit x 64 • Part Identification D ynam ic RAM high density m em ory module. The - KMM364C213BK 2048 cycles/32ms Ref, 30 0m il SOJ


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    PDF KMM364C213BK/BS KMM364C213BK/BS 2Mx64 364C213B KMM364C213BK cycles/32ms KMM364C213BS 300mil 48pin

    Untitled

    Abstract: No abstract text available
    Text: C XA3171N SONY 4ch. Read/W rite Am plifier for three terminal MIG Head of Hard Disk Drive Description The CXA3171N is a Read/Write Amplifier for the special three terminal MIG head of hard disk drive and designed to handle up to 4 channel heads. Features • Operate on single +5 V power supply


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    PDF XA3171N CXA3171N CXA3171N 24PIN SSOP-24P-L01 SSOP024-P-0056 42/COPPER

    MC807

    Abstract: BYV133 BYV133-35 Li53c MC-807 TP 505 diode
    Text: N AMER P H I L I P S / D I S C R E T E 55E D • bbS3T31 DOSShTi 3 ■ BYV133 SERIES T ~ O Z -i° SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum -barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switched-mode power


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    PDF bbS3T31 BYV133 0G22707 T-03-19 M3160 M3233 MC807 BYV133-35 Li53c MC-807 TP 505 diode