Untitled
Abstract: No abstract text available
Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs [ /Title The Discrete Products Operation of Intersil has developed a FSYC series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSYC260D,
FSYC260R
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Untitled
Abstract: No abstract text available
Text: FSYC260D, FSYC260R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 46A, 200V, rDS ON = 0.050Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
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FSYC260D,
FSYC260R
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1E14
Abstract: 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET
Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSYC260D,
FSYC260R
1E14
2E12
FSYC260D
FSYC260D1
FSYC260D3
FSYC260R
FSYC260R1
FSYC260R3
Rad Hard in Fairchild for MOSFET
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smd diode 46A
Abstract: 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 46a transistor smd
Text: FSYC260D, FSYC260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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Original
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FSYC260D,
FSYC260R
smd diode 46A
1E14
2E12
FSYC260D
FSYC260D1
FSYC260D3
FSYC260R
FSYC260R1
FSYC260R3
46a transistor smd
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1E14
Abstract: 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET
Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs December 2000 • 46A, 200V, rDS ON = 0.050Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSYC260D,
FSYC260R
36MeV/mg/cm2
MIL-PRF-19500,
MIL-PRF-19500.
1E14
2E12
FSYC260D
FSYC260D1
FSYC260D3
FSYC260R
FSYC260R1
FSYC260R3
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: FSYC260D, FSYC260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs juiy 1998 Features Description • 46A, 200V, r[js ON = 0.050£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s
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OCR Scan
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PDF
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FSYC260D,
FSYC260R
36MeV/mg/cm2
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Untitled
Abstract: No abstract text available
Text: FSYC260D, FSYC260R H A R R IS X S em iconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, Tqs ^o N = 0.050£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSYC260D,
FSYC260R
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