2E12
Abstract: FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1 Rad Hard in Fairchild for MOSFET
Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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PDF
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FSJ9160D,
FSJ9160R
-100V,
2E12
FSJ9160D
FSJ9160D1
FSJ9160D3
FSJ9160R
FSJ9160R1
Rad Hard in Fairchild for MOSFET
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Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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Original
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PDF
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FSJ9160D,
FSJ9160R
-100V,
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1
Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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PDF
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FSJ9160D,
FSJ9160R
-100V,
2E12
FSJ9160D
FSJ9160D1
FSJ9160D3
FSJ9160R
FSJ9160R1
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R FSJ9160D, FSJ9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs February 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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Original
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PDF
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FSJ9160D,
FSJ9160R
1-800-4-HARRIS
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VOLTAGE LEVEL RELAY SM 125 230
Abstract: No abstract text available
Text: u FSJ9160D, FSJ9160R H a r r is .«»,co.ucTo» 44A, -100V, 0.055 Ohm, Rad Harel, SEGR Resistant, P-Channel Power MOSFETs Ju ne 1 998 Features Description • 44A, -100V, rDS 0 N = 0.055£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSJ9160D,
FSJ9160R
-100V,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
VOLTAGE LEVEL RELAY SM 125 230
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Untitled
Abstract: No abstract text available
Text: ¡as H a rris FSJ9160D, FSJ9160R S E M I C O N D U C T O R " U W U W 'W * Radiation Hardened, S E G R Resistant P-Channel Power M O S F E T s February 1998 Features Description • 44A, -100V, r D S o N = 0.055i2 The Discrete Products Operation of Harris Semiconductor
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OCR Scan
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PDF
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FSJ9160D,
FSJ9160R
-100V,
055i2
36MeV/m
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rQs^oN = 0.055i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSJ9160D,
FSJ9160R
-100V,
MIL-S-19500
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