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    FQPF SERIES Search Results

    FQPF SERIES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650M-F-COVER Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical Visit Murata Manufacturing Co Ltd
    9004FM/B Rochester Electronics LLC 9004 - NAND Gate, 9004 Series Visit Rochester Electronics LLC Buy
    100183FC Rochester Electronics LLC Multiplier, 100K Series, 8-Bit, ECL, CQFP24, CERPAK-24 Visit Rochester Electronics LLC Buy
    74AC521SC REEL Rochester Electronics LLC 74AC521 - Identity Comparator, AC Series, 8-Bit, Inverted Output, CMOS Visit Rochester Electronics LLC Buy
    MM74HC4538M-G Rochester Electronics LLC 74HC4538 - Monostable Multivibrator, HC/UH Series, 2-Func, CMOS Visit Rochester Electronics LLC Buy

    FQPF SERIES Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQPF Series Fairchild Semiconductor Discrete Products Original PDF

    FQPF SERIES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KSMF17P06 60V P-Channel MOSFET TO-220F FQPF Series Features • -12A, -60V, R DS on = 0.12 Ω @VGS = -10 V • Low gate charge ( typical 21 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175 °C maximum junction temperature rating


    Original     		PDF KSMF17P06 O-220F

    FQPF8N60CF

    Abstract: No abstract text available
    Text: FQPF8N60CF N-Channel QFET FRFET® MOSFET 600 V, 6.26 A, 1.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQPF8N60CF FQPF8N60CF O-220F FQPF10CF

    8n80c

    Abstract: 8n80 FQP8N80C FQPF
    Text: TM FQP8N80C/FQPF8N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP8N80C/FQPF8N80C O-220 FQPF8N80C FQPF8N80CXDTU FQPF8N80CYDTU 8n80c 8n80 FQP8N80C FQPF

    10N60CT

    Abstract: 10N60C FQPF10N60CT FQPF Series fqpf10n60c FQPF10N60C FQPF Series FQPF 10N60 FQP10N60C
    Text: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP10N60C FQPF10N60C FQPF10N60C FQPF10N60CT 10N60CT 10N60C FQPF Series fqpf10n60c FQPF Series FQPF 10N60

    Untitled

    Abstract: No abstract text available
    Text: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP11N40C/FQPF11N40C O-220 O-220F FQP11N40C/FQPF11N40C

    8N60C

    Abstract: 8N60CT FQPF8N60CT FAN7602 FQPF8N60CYDTU FQPF8N60C AN-6014 FQPF Series
    Text: FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP8N60C/FQPF8N60C FQPF8N60C AN-6014: AN-6014 FAN7602 FQPF8N60CT FQPF8N60CYDTU 8N60C 8N60CT FAN7602 FQPF Series

    9N50C

    Abstract: 9N50C mOSFET FQPF9N50C FQPF9N50CT high power diode 500v 220F3
    Text: TM FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP9N50C/FQPF9N50C FQPF9N50C O-220F-3 FQPF9N50CT FQPF9N50CYDTU 9N50C 9N50C mOSFET high power diode 500v 220F3

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQPF8N60CF 600V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF8N60CF FQPF8N60CF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQPF12N60CT 600V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF12N60CT FQPF12N60CT

    Untitled

    Abstract: No abstract text available
    Text: TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description • 9A, 500V, RDS on = 0.85Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 28 nC)


    Original     		PDF FQPF9N50CF FQPF9N50CF

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description • 9A, 600V, RDS on = 0.8Ω @VGS = 10 V • Low gate charge ( typical 44 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FQP10N60CF FQPF10N60CF FQPF10N60CF

    FQPF Series

    Abstract: FQP10N60C
    Text: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FQP10N60C FQPF10N60C FQPF10N60C FQPF Series

    2n60 fqpf

    Abstract: 2N60 MOSFET SMPS STD2NB60 3n60 MOSFEt STD3NB60 Self-Oscillating Flyback Converters 3N60
    Text: Power Management IPS102 IN-PLUG series: IPS102 Critical Mode PFC Controller Low Cost, High Efficiency PRELIMINARY REV. 5 INTRODUCTION FEATURES DESCRIPTION  The IN-PLUG IPS102 is a primary-side switching controller which provides simple yet high performance active power factor correction PFC .


    Original     		PDF IPS102 IPS102 1290-B AADS00002/AA605M 2n60 fqpf 2N60 MOSFET SMPS STD2NB60 3n60 MOSFEt STD3NB60 Self-Oscillating Flyback Converters 3N60

    3N60

    Abstract: No abstract text available
    Text: Power Management IPS102 IN-PLUG series: IPS102 Critical Mode PFC Controller Low Cost, High Efficiency PRELIMINARY REV. 5 INTRODUCTION FEATURES DESCRIPTION  The IN-PLUG IPS102 is a primary-side switching controller which provides simple yet high performance active power factor correction PFC .


    Original     		PDF IPS102 IPS102 1290-B AADS00002/AA605M 3N60

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description • 13A, 500V, RDS on = 0.54Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP13N50CF FQPF13N50CF FQPF13N50CF

    pfv218n50

    Abstract: PV218N50 18N50V2 PV2-18N50 FQPF18N50V2 pfv218 FQPF18N50 FQP18N50V2 18N50 pfv2
    Text: FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description • 550V @TJ = 150°C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Typ. RDS on = 0.265Ω @VGS = 10 V


    Original     		PDF FQP18N50V2/FQPF18N50V2 FQP18N50V2/FQPF18N50V2 factTO-220F FQPF18N50V2 O-220F-3 FQPF18N50V2SDTU pfv218n50 PV218N50 18N50V2 PV2-18N50 pfv218 FQPF18N50 FQP18N50V2 18N50 pfv2

    Untitled

    Abstract: No abstract text available
    Text: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP10N50CF FQPF10N50CF FQPF10N50CF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP12N60C FQPF12N60C FQPF12N60C

    Untitled

    Abstract: No abstract text available
    Text: IN-PLUG IPS1 0 1 Datasheet – Rev.10 - High Efficiency Power Factor Correction Cont r oller IN-PLUG® series: IPS1 0 1 Low Cost, High Efficiency Power Factor Correction Controller – REVISION 10 - INTRODUCTION FEATURES DESCRIPTION ® The IN-PLUG IPS101 is a special line-side


    Original     		PDF IPS101 1290-B

    3N80C

    Abstract: FQPF*3N80C DATE CODE FAIRCHILD
    Text: TM FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP3N80C/FQPF3N80C O-220 FQPF3N80C O-220F-3 FQPF3N80CYDTU 3N80C FQPF*3N80C DATE CODE FAIRCHILD

    9N25C

    Abstract: FQPF9N25CT
    Text: FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP9N25C/FQPF9N25C FQPF9N25C FQPF9N25CT 9N25C

    6n40c

    Abstract: No abstract text available
    Text: TM FQP6N40C/FQPF6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP6N40C/FQPF6N40C FQPF6N40C FQPF6N40CT 6n40c

    5n50c

    Abstract: FQPF*5n50c 5n50
    Text: TM FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP5N50C/FQPF5N50C FQPF5N50C FQPF5N50CT FQPF5N50CYDTU 5n50c FQPF*5n50c 5n50

    EE ferrite

    Abstract: No abstract text available
    Text: IN-PLUG IPS1 5 Datasheet – Rev.12 - Low cost, High Efficiency, Low Power off-line Switcher IN-PLUG® series: IPS1 5 Low Cost, High Efficiency, Low Power Enhanced Off-line Switcher – REVISION 12 INTRODUCTION DESCRIPTION The IN-PLUG® IPS15 is an enhanced off-line


    Original     		PDF IPS15 IPS10. IPS10, 1290-B EE ferrite