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Untitled Abstract: No abstract text available Text: FQB6N80 / FQI6N80 September 2000 QFET TM FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQB6N80 FQI6N80 FQI6N80TU O-262 FQI6N80	PDF

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Abstract: No abstract text available
Text: FQB6N80 / FQI6N80 September 2000 QFET TM FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

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FQB6N80 FQI6N80 FQI6N80TU O-262 FQI6N80

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