FQI6N80 Search Results

FQI6N80 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FQI6N80		Fairchild Semiconductor	800 V N-Channel MOSFET		Original	PDF

FQI6N80 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: FQB6N80 / FQI6N80 September 2000 QFET TM FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQB6N80 FQI6N80 FQI6N80TU O-262 FQI6N80	PDF
FQB6N80 Abstract: FQI6N80 Text: FQB6N80 / FQI6N80 September 2000 QFET TM FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQB6N80 FQI6N80 FQI6N80	PDF
FQB6N80 Abstract: FQI6N80 Text: FQB6N80 / FQI6N80 October 2008 QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQB6N80 FQI6N80 FQI6N80	PDF
Untitled Abstract: No abstract text available Text: FQB6N80 / FQI6N80 October 2008 QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQB6N80 FQI6N80 FQI6N80	PDF
Untitled Abstract: No abstract text available Text: FQB6N80 / FQI6N80 September 2000 QFET TM FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQB6N80 FQI6N80 FQB6N80TM O-263	PDF
Untitled Abstract: No abstract text available Text: FQB6N80 / FQI6N80 N-Channel QFET MOSFET 800 V, 5.8 A, 1.95 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to	Original	FQB6N80 FQI6N80 FQI6N80	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
SSI5N60A Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3 Text: Discrete MOSFET TO-262 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 -	Original	O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 SSI5N60A FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3	PDF
SSP6N60A Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2	Original	SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A	PDF
fairchild mosfet selection guide Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60 Text: Q-FETTM Line Card Fairchild Power MOSFETs QFETTM Line Card Overview Fairchild Semiconductor, a leading innovator in the design and manufacture of high-performance semiconductors, introduces QFETTM, an advanced technology for power MOSFETs. QFETTM Optoelectronics	Original	Power247TM, fairchild mosfet selection guide FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60	PDF