Untitled
Abstract: No abstract text available
Text: S IE M E N S PÑP Silicon High-Voltage Transistors MPSA 92 MPSA 93 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: M P S A 42 M P S A 43 NPN Type M P S A 92 M P S A 93 Marking M P S A 92 M P S A 93 Ordering Code
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Q68000-A5906
Q68000-A4810
flE35bQ5
G1B2457
fi535bQ5
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 3.3 V DRAM Modules HYM 64Vx005GCD L -60 144 pin SO-DIMM EDO-DRAM Modules 8 MB, 16 MB, 32 MB & 64 MB density Preliminary Information • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Modules for PC notebook applications • Chip-on Board (COB) Assembly Technique
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64Vx005GCD
flS35bG5
01S3ML2
L-DIM-144-C1
L-DIM-144-C4
BE35L
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Untitled
Abstract: No abstract text available
Text: Inf i ne on lm P , o v e d R — technologies ! s 5 SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ^ D S o n • Avalanche rated Continuous drain current b ^DS
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Q67040-S4121
SPD31N05
P-T0252
SPU31N05
Q67040-S4113-A2
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
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pj 989
Abstract: No abstract text available
Text: 47E J> m S23SbOS 0Q243GS S • S I E G 1^31-35 Silicon N Channel MOSFET Tetrode BF 989 _ SIEMENS AKTIENGESELLSCHAF • • _ For amplifier and mixer stages in UHF and VHF TV tuners Low input and output capacitance Type Marking Ordering code
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S23SbOS
0Q243GS
Q62702-F874
Q62702-F969
fi23Sb05
BF989
pj 989
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Untitled
Abstract: No abstract text available
Text: BUZ 342 Infine on t*c h o ologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated •d v /d / rated 1 VPT051SB 2 J • Ultra low on-resistance • 175"C operating temperature D G Type BUZ 342 h Vds 60 A 50 V f lDS on 0.01 n
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O-218AA
C67078-S3135-A2
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 323 SIPMOS Power Transistor ^ • N channel o • Enhancement mode V > ! G 5 t- 6 • Avalanche-rated 2 'á 3 Pin 1 Pin 2 Type BUZ 323 b 15 A Vbs 400 V Pin 3 D G S ^DS on Package Ordering Code 0.3 a TO-218AA C67078-S3127-A2 Maximum Ratings
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O-218AA
C67078-S3127-A2
fl235b05
O-218
flS35bG5
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Untitled
Abstract: No abstract text available
Text: SIEMENS Ge-Avalanche Photodiode in TO Package with Integrated Optics SRD 00512Z • Designed for application in fiber-optic communication systems • Sensitive receiver for the 2nd optical window 1300 nm • High gain-bandwidth product • Suitable for bit rates up to 1.2 Gbit/s and long-haul
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00512Z
Q62702-P3042
aS35tQ5
SRD00512Z
00E-07
flS35bG5
00E-05
00E-03
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m43of
Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
Text: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Data Sheet 01.99 DS 2 • flE3ShDS 013751t, b77 B PEB/F 2091 Revision History: Current Version: 01.99 Previous Version: None Page in previous Version
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PEB2091
PEF2091
013751t,
flE35b05
m43of
TAA 761
siemens Package Outlines P-LCC DATE CODE
3535B
aop 741
5MXE
siemens lsl
siemens 58 295 84 pin intel 80
B209
B-209
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siemens isdn
Abstract: siemens 3FT
Text: SIEMENS AKTIENÊESEL LSCH AF M?E D • fl23Sfc.QS OOBSfifiS 2 H S I E 6 S I E M E N S 'T-P5-u-3ft Advanced CMOS Frame Aligner ACFA Preliminary Data PEB 2035 CMOS 1C Type Ordering Code Package PEB 2035-C PEB 2035-N PEB 2035-P Q67100-H8358 Q67100-H8684 Q67100-H8359
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fl23Sfc
Q67100-H8358
Q67100-H8684
Q67100-H8359
2035-C
2035-N
2035-P
24-channel
32-channel
T-75-11-29
siemens isdn
siemens 3FT
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D1S34
Abstract: No abstract text available
Text: S IE M E N S 3.3 V SDRAM Modules HYS 64Vx00 2 0G(C)D(L)-8/-10 144 pin SO-DIMM SDRAM Modules 32MB, 64MB & 128MB density • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC notebook applications • One bank 4M x 64, 8M x 64 and 16M x 64 non-parity module organization
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128MB
64Vx00
L-DIM-144-C6
L-DIM-144-C7
fl235bD5
D1S34
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smd transistor 43t
Abstract: marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor BUZ102S smd code book transistor 43t SMD E3045 G1333
Text: Infineon , m proved technologies BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current b CO Features 55 V 0.018
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BUZ102S
P-T0220-3-1
Q67040-S4011-A2
E3045A
P-T0263-3-2
Q67040-S4011-A6
E3045
smd transistor 43t
marking code ya SMD Transistor
MARKING SMD 43t
SMD MARKING CODE 43t
smd 43t transistor
smd code book transistor
43t SMD
G1333
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Untitled
Abstract: No abstract text available
Text: BSS 100 In fin e o n taehnologifts SIPMOS Small-Slgnal Transistor • N channel • Enhancement mode • Logic Level *V'GS th = 0.8.2.0V Type Vbs fe f l DS(on) Package Marking BSS 100 100 V 0.22 A 6Í2 TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code
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Q62702-S499
Q62702-S007
Q62702-S206
E6288
E6296
E6325
S35bQ5
Q133777
SQT-89
B535bQ5
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SMD L02
Abstract: smd diode l03 PSB4506
Text: bSE D • fl235bD5 GGS2G21 5 b 3 ■ S I E 6 SIEM EN S SIEMENS AKTIENGESELLSCHAF Simple Hands-Free Add-On Circuit SHAC PSB 44030-P PSB 44030-T Preliminary Data Bipolar 1C Features • • • • • • • • Low voltage operation (min. 2.7 V) for line powered
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fl235bD5
GGS2G21
44030-P
44030-T
P-DSO-20-1
P-DIP-20-1
SMD L02
smd diode l03
PSB4506
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Untitled
Abstract: No abstract text available
Text: M7E D S IE M E N S • 023SbDS 005b5bl & « S IE G SIEMENS AKTIENGESELLSCHAF T - a ^ - o s SIMOPAC Module V ds Id R DS on • • • • • • • BSM 691 F 1000 V = 6 x 4 .8 A = 2.5 fl = Power module 3-phase full-bridge FREDFET N channel Enhancement mode
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023SbDS
005b5bl
C67076-A1502-A2
flS35bG5
002b5b7
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Untitled
Abstract: No abstract text available
Text: BSS 145 Infineon t«ehno!ogi6* SIPMOS Small-Signal Transistor • N channel s \A • Enhancement mode 2 • ^GS th = 1 4 -2-3 V 1 Pin 1 Pin 2 Vbs BSS 145 65 V Type BSS 145 Ordering Code Q67000-S132 0.22 A Pin 3 S G Type VPS05557 flDS(on) Package Marking
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Q67000-S132
VPS05557
OT-23
E6327
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
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SQT-89
Abstract: BUZ100SL E3045 Q67040-S4000-A2 smd code book la tube smd diode 27 5j Diode smd 5j
Text: BUZ 100SL Inf ineon technologie» SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vfos • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.012 a 70 A b 55 V • Logic Level
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100SL
BUZ100SL_
P-TQ220-3-1
Q67040-S4000-A2
BUZ100SL
E3045A
P-TQ263-3-2
Q67040-S4000-A6
E3045
SQT-89
smd code book
la tube
smd diode 27 5j
Diode smd 5j
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENG ESE LLSCHAF ô23StiQ5 0057377 1 « S I E G 47E S S IE M E N S SFH 407 SERIES INFRARED EMITTER Package Dimensions in Inches mm 216 M axim um R atings Reverse Vbltage (VR) Forward Current (lF) . . . . . . 2V 50 mA Forward Current When Mounted in LWL Socket (lF).
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23StiQ5
Hf-07
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SLE4406M1
Abstract: SLE4406 SLE 4406
Text: SIEMENS Intelligent 104-Bit EEPROM Counter for > 20 000 Units with Security Logic SLE 4406 Features • • • • • • • 104 x 1 bit organization Three memory areas with special characteristics eg ROM, PROM, EEPROM Maximum of 20 480 count units Special security features
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104-Bit
flS35bG5
23SbQS
SLE4406M1
SLE4406
SLE 4406
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3 V 4M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 8M x 64/72-Bit 2 Bank SDRAM Module HYS 64 72 V4200GU HYS 64(72)V8220GU PC66 & PC100 168 pin unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-ln-Line SDRAM Modules for PC main memory applications
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64/72-Bit
V4200GU
V8220GU
PC100
D1233Qfl
V4200/8220G
BE35bD5
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Untitled
Abstract: No abstract text available
Text: SIEMENS PN P Silicon A F and Sw itching Tran sisto rs • • • • B C X 42 B S S 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 NPN Type Marking Ordering Code (tape and reel)
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Q62702-C1485
Q62702-S534
OT-23
flS35bG5
535L0S
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Untitled
Abstract: No abstract text available
Text: SIEMENS BB 831 Silicon Variable Capacitance Diode Preliminary data • Frequency range up to 2 GHz special design for use in TV-sat indoor units 1 Iv i 2 o- K -0 EHA07D01 white T Q62702-B592 < BB 831 Pin Configuration il CM Ordering Code II
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EHA07D01
Q62702-B592
OD-323
Aua-03-1998
flS35bG5
0235bD5
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SmD TRANSISTOR a77
Abstract: smd marking code SSs
Text: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138
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BSS138
OT-23
Q67000-S566
Q67000-S216
E6327
E6433
fopu22
S35bQ5
Q133777
SQT-89
SmD TRANSISTOR a77
smd marking code SSs
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Transistors SMBT 6428 SMBT 6429 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 6428 SMBT 6429
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Q68000-A8321
Q68000-A8322
OT-23
Tslg35bÃ
D12ES7b
P006I2
Q155577
fi235b05
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TDA 2815
Abstract: No abstract text available
Text: SIEM ENS Audioprocessor 1 Overview 1.1 Features TDA 4350X Stereo-Soundprocessing • Three stereo AF inputs, one of the inputs is equipped with floating ground. • Input level control for individual level setting of the several AF sources in addition with a clipping
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4350X
6E3Sb05
TDA4350X
P-DSO-28-1
35x45*
TDA 2815
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