FLM7177-18DA
Abstract: T-34038
Text: FLM7177-18DA Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.5dB (Typ.) High PAE: r iadd = 30% (Typ.) Low IM3 = -45dBc@Po = 3 1 .5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q
|
OCR Scan
|
FLM7177-18DA
-45dBc
FLM7177-18DA
Symbo474
T-34038
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FLM7177-IHDA Internally Matched Power G a As FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Item Condition Rating Unit Draln-Souree Voltage VDS 15 V Gate-Source Voltage VGS -5 V 83.3 w Total Power Dissipation Tc = 25°C pt Storage Temperature
|
OCR Scan
|
FLM7177-IHDA
37dBm
------34dBm
|
PDF
|
7177-4C
Abstract: No abstract text available
Text: FLM7177-4C Internally M atch ed Power GaAs l ETs ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Draln-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 25 w Total Power Dissipation Pt Tc = 25°C Storage Temperature
|
OCR Scan
|
FLM7177-4C
30dBm
7177-4C
|
PDF
|
FLM7177-18DA
Abstract: U/25/20/TN26/15/850/FLM6472-18DA
Text: FLM7177-18DA Internally Matched Power GaAs FETs r UJ11j U FEATURES • • • • • • • High Output Power: P-idB = 42.5dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q
|
OCR Scan
|
FLM7177-18DA
UJ111
-45dBc
FLM7177-18DA
U/25/20/TN26/15/850/FLM6472-18DA
|
PDF
|
FLM7177-8C
Abstract: No abstract text available
Text: FLM7177-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
|
OCR Scan
|
FLM7177-8C
39dBm
7177-8C
FLM7177-8C
|
PDF
|
7177-8C
Abstract: FLM7177-8C/D
Text: FLM7177-8C Fuffrsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q
|
OCR Scan
|
FLM7177-8C
39dBm
FLM7177-8C
7177-8C
FLM7177-8C/D
|
PDF
|
FLM7177-12D
Abstract: FLM7177
Text: çP FLM7177-12DA lUJI I j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G-j^B = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q
|
OCR Scan
|
FLM7177-12DA
-45dBc
30dBm
FLM7177-12DA
FLM7177-12D
FLM7177
|
PDF
|
FLM7177-8D
Abstract: i80m
Text: FLM7177-8D FimTÇII rU JI Ij U Internally M a tc h e d P o w e r G aA s F E T s FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 7.1 ~ 7.7GHz
|
OCR Scan
|
FLM7177-8D
39dBm
-45dBc
28dBm
FLM7177-8D
7177-8D
i80m
|
PDF
|
FLM7177-8D
Abstract: 8d 139 231
Text: FLM7177-8D Internally Matched Power GaAs FETs RI lîrrQi r UJ11jU FEATURES • • • • • • • High Output Power: P ^ b = 39dBm (Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 7.1 ~ 7.7GHz
|
OCR Scan
|
FLM7177-8D
39dBm
-45dBc
28dBm
FLM7177-8D
8d 139 231
|
PDF
|
FLM7177-12DA
Abstract: No abstract text available
Text: FLM7177-12DA r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 41 dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q
|
OCR Scan
|
FLM7177-12DA
UJ115
41dBm
-45dBc
30dBm
Voltage077
FLM7177-12DA
|
PDF
|
GaAs FETs
Abstract: No abstract text available
Text: FLM7177-12DA Internally Matched Power iaAs F E l s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 57.6 w Total Power Dissipation Tc = 25°C pt Storage Temperature
|
OCR Scan
|
FLM7177-12DA
3100mA
GaAs FETs
|
PDF
|
FLM7177-4c
Abstract: FLM7177
Text: FLM7177-4C Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G-j^B = 8.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
|
OCR Scan
|
36dBm
FLM7177-4C
FLM7177-4C
FLM7177
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FLM7177-4C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
|
OCR Scan
|
FLM7177-4C
36dBm
7177-4C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FLM7177-4D lnteruallx Matched Power GaAs F E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 25 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature
|
OCR Scan
|
FLM7177-4D
1100mA
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: FLM7785-4C Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G -j^B = 7.0dB (Typ.) High PAE: r iadd = 30% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
|
OCR Scan
|
FLM7785-4C
36dBm
FLM7785-4C
FLM7177-18DA
|
PDF
|
FLM6472-12D
Abstract: FLM4450-4B/D FLM3742-12D FLM6472-8C FLM3742-4B FLM4450-25D FLM7177-4C FLM6472-4C FLM5964 FLM5964-14/D
Text: - 136 - & a £ tt € ffl iÉ m ís A ñ * K V * té £ 1 (V) (A) M V P d/P ch * I gss (max) (A) « Vg s (V) (Ta=25cC ) (min) (raax) Vd s (A) (V) (A) (rain) (max) Vd s (V) (V) (V) Id (A) (rain) (S) Vd s (V) Id (A) FLM3742-12D a ± ii C-Band PA GaAs N D
|
OCR Scan
|
FLM3742-12D
FLM3742-14/D
FLM3742-25D
FLM3742-4B/D
FLM3742-8B/D
FLM4450-12D
GaAs-14/D
44dBm,
FLM6472-25D
36dBm,
FLM6472-12D
FLM4450-4B/D
FLM3742-12D
FLM6472-8C
FLM3742-4B
FLM4450-25D
FLM7177-4C
FLM6472-4C
FLM5964
FLM5964-14/D
|
PDF
|
FLM5359-8C
Abstract: FUJITSU MICROWAVE
Text: INTERNALLY MATCHED POW ER G aAs FETs C-BAND Electrical Characteristics (Ta = 2S°C) P id B TYP. (dB) G-lcfB TYP. (dB) nadd TYP. (dB) f (GHz) Vos (V) FLM2527L-20 42.5 11.0 34 2 . 5 - 2.7 FLM3742-4C 36 12.0 34 FLM3742-8C 39 11.0 FLM4450-4C 36 FLM4450-8C (rnA)
|
OCR Scan
|
FLM2527L-20
FLM3742-4C
FLM3742-8C
FLM4450-4C
FLM4450-8C
FLM5359-4C
FLM5359-8C
FUJITSU MICROWAVE
|
PDF
|
FLM7785-8D
Abstract: FLM7785-4D FLM6472-6D FLM3742-12DA FLM1011-8D
Text: TORS LOW DISTORTION INTERNALLY MATCHED POWER FETs Electrical Characteristics (Ta = 25°C Part Number PidB GidB TYP. TYP. (dBm) (dB) IM3 Gain TYP. Flatness (dBc) (dB) f (GHz) Vd s (V) (mA) id s Rth TYP. Package Frequency (°C/W) Type Band FLM3742-4E 36.0
|
OCR Scan
|
FLM6472-35DA
FLM7177-4D
FLM7177-8D
FLM7177-12DA
FLM7177-18DA
FLM7785-4D
FLM7785-8D
FLM7785-12DA
FLM7785-18DA
FLM1011-4D
FLM6472-6D
FLM3742-12DA
FLM1011-8D
|
PDF
|
FLM7177-4D
Abstract: CI 7400 GaAs FETs
Text: RI lîrrQi r UJ11jU F L M 7 1 7 7 -4 D Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 36dBm (Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 7.1 ~ 7.7GHz
|
OCR Scan
|
FLM7177-4D
36dBm
-45dBc
25dBm
Voltag47
FLM7177-4D
CI 7400
GaAs FETs
|
PDF
|
FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: F LM 7177-81 Internally Matched Power ìaAs I E ! s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) -Condition item Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 42.8 w Total Power Dissipation Tc = 25°C Pt Storage Temperature
|
OCR Scan
|
2200mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FLM7J77-8C Internally Matched Power ¡aAs FETs ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Symbol Item Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 42.8 w Total Power Dissipation Pt Tc = 25°C Storage Temperature
|
OCR Scan
|
FLM7J77-8C
2200mA
|
PDF
|
7177-4D
Abstract: No abstract text available
Text: F L M 7 1 7 7 -4 D Internally M a tc h e d P o w e r G aA s F E T s m n T C II r U J I 1b U FEATURES • • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G-j^B = 8.0dB (Typ.) High PAE: r iadd = 30% (Typ.) Low IM3 = -45dBc@Po = 25dBm
|
OCR Scan
|
36dBm
-45dBc
25dBm
7177-4D
7177-4D
|
PDF
|
FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
|
OCR Scan
|
|
PDF
|
