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Fuji Electric Co Ltd FLL101ME TRANSISTOR,MESFET,N-CHAN,15V V(BR)DSS,SOT-437AVAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FLL101ME		5			1 $75.4 10 $75.4 100 $75.4 1000 $75.4 10000 $75.4	Buy Now
FUJITSU Semiconductor Limited FLL101ME TRANSISTOR,MESFET,N-CHAN,15V V(BR)DSS,SOT-437AVAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FLL101ME		1			1 $150.3872 10 $150.3872 100 $150.3872 1000 $150.3872 10000 $150.3872	Buy Now
FUJITSU Limited FLL101ME Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	FLL101ME		32			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FLL101ME Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FLL101ME		Unknown	High Frequency Device Data Book (Japanese)		Scan	PDF
FLL101ME		Unknown	FET Data Book		Scan	PDF

FLL101ME Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FLL101ME Abstract: FLL101 Text: FLL101ME L-Band Medium & High Power GaAs FETs FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: hadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL101ME is a Power GaAs FET that is specifically designed to	Original	PDF	FLL101ME FLL101ME It035 FLL101
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	PDF	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	PDF	2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
FLL55 Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME Text: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.	OCR Scan	PDF	FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171
FLL101ME Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C Text: - 134 - f =£ m % tt % s & m % ±m FLK202MH-14 FLK202XV Ä±iS FLLIOME ^ 2Ê! fë S P d/P c h % K FIK102XV I K ti !í 13=250 t st (V) ft (A) (V) ft * Ig s s (max) (A) m Vg s (V) (min) (max) Vps (A) (A) (V) (min) (max) Vd s (V) (V) (V) Id (A) (min)	OCR Scan	PDF	FLK202MH-14 FLK202XV FLL10ME FLL17MB FLL35ME GaLM1011-8D FLM1112-4C FLM1213-4C FLM1213-4D FLM1213-8C FLL101ME FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan	PDF
FLL101ME Abstract: No abstract text available Text: FLLIOIME m ir r c ii r UJ11jU L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P1c\|B=29.5dBnn Typ. • • • • High Gain: G-\|C\|b = 13-5cIB (Typ) High PAE: riadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION	OCR Scan	PDF	UJ11jU 13-5cIB FLL101ME FLL101ME
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan	PDF
FSX52WF Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of	OCR Scan	PDF	FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK