MARKING SMD IC CODE 2100
Abstract: VD F1 SMD B10T smd marking code bs Capacitor Tantal SMD MARKING SMD IC CODE 10 pin SIEMENS CAPACITOR SIEMENS svp p 181 y 1R31
Text: • flE35b05 QO'ìDbi4 2 1 3 m SIEM ENS GaAsMMIC CGY181 Preliminary Datasheet * Power amplifier for PCN/PCS applications * Fully integrated 2 stage amplifier •Operating voltage range: 2.7 to 6 V •Overall power added efficiency 35 % * Input matched to 50 £2, simple output match
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flE35b05
00ci0b54
Q68000-A8883
235b05
MARKING SMD IC CODE 2100
VD F1 SMD
B10T
smd marking code bs
Capacitor Tantal SMD
MARKING SMD IC CODE 10 pin
SIEMENS CAPACITOR
SIEMENS svp
p 181 y
1R31
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Untitled
Abstract: No abstract text available
Text: Semiconductor Group Siemens AG Consumer Electronics MOS Edition Target Specification Document number: V66100-M692-X-1 -7659 Date: 08.11.94 flE35tiDS D07c1blb 02=1 11.94 Page: ii Target Specification SDA 5650 Contents 1 General D es c rip tio n .5
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V66100-M692-X-1
flE35tiDS
0235hDS
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transistor d 1556
Abstract: d 1556 transistor transistor af 126 AF279S transistor 1555 UHF pnp transistor AF279 PNP UHF transistor flE35b05 AF 279
Text: ESC D • flE35bG5 OODMO?^ 7 m S I Z G ' PNP Germanium UHF Transistor A F 279 S SIEMENS A K T I E N G E S E L L S C H A F 25C 04079 D - — fo r in p u t stages up to 9 0 0 M H z fly ' A n ' AF 279 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly
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flE35b05
T0119.
q62701-f87
y12bl
transistor d 1556
d 1556 transistor
transistor af 126
AF279S
transistor 1555
UHF pnp transistor
AF279
PNP UHF transistor
AF 279
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Untitled
Abstract: No abstract text available
Text: • flE35b05 DG3fl33b h ■ Selection Guide SIEMENS AKTIENGESELLSCHAF SIEG 47E D _ EMI suppression chokes l-core chokes Rated inductance per winding Rated Type Rated Page current per Single Double voltage winding choke choke B82500 0.1 to 2 A F 42 120 nH to
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flE35b05
DG3fl33b
B82500
B82502-W
B82522-V
B82522-C
B82503
B235b05
B82500
C/104
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l22e
Abstract: BC213 BC212 BC213B BC212a BC212 Siemens bc 212 bc212b 213 T A212B
Text: SIE D • SIEM ENS flE35b05 0D4153E Obfl M S I E 6 SI EM EN S A K T I E N G E S E L L S C H A F " P 2 ñ 'Z - l PNP Silicon AF Transistors BC212 BC 213 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 182, BC 183 NPN
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flE35b05
0D4153E
BC212
Q62702-C242
Q62702-C374-V1
Q62702-C374-V2
Q62702-C564
Q62702-C1159
Q62702-C1160
Q62702-C1158
l22e
BC213
BC213B
BC212a
BC212 Siemens
bc 212
bc212b
213 T
A212B
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K2040
Abstract: No abstract text available
Text: bOE D • flE35b05 DD457M4 200 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF r = 5 3 - o 7 SIMOPAC Module V DS = 4 0 0 V / □ = 2 x R D S o n = 0 . 1 • • • • • • • 4 5 BSM 244 F A £2 Power module Half-bridge FREDFET N channel Enhancement mode
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flE35b05
DD457M4
C67076-A1155-A2
S1M00152
fl235bDS
K2040
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Untitled
Abstract: No abstract text available
Text: • flE35b05 DG3fl33b h ■ SIEG Selection Guide SIEMENS AKTIENGESELLSCHAF 47E D _ EMI suppression chokes l-core chokes Rated inductan ce per winding Rated Type Rated Page current per Single Double voltage winding choke choke B82500 0.1 to 2 A F 42 120 nH to
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flE35b05
DG3fl33b
B82500
2522-V
B82522-C
B82503
fi23Sb05
B-39-13
B82503
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S100 NPN Transistor
Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503
Text: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF
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fl23SbOS
00Q4507
Q62702-F574
S100 NPN Transistor
BF603
S100 transistor
BF503
Q62702-F574
S100
S400
transistor 503
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BC308
Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
Text: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN
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flE35bD5
004155b
Q62702-C703
Q62702-C283
Q62702-C324
Q62702-C704
Q62702-C285
Q62702-C286
Q62702-C393
Q62702-C705
BC308
bc307 siemens
BC307
bc307a
BC 309
BC307B
BC 307
BC309C
bc 374
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transistor SMD t07
Abstract: SMD Transistor t07 BTS 302 BTS 410 E2 E3043 STT 3 SIEMENS transistor t07 circuit diagram obd diagnostic bts 410d2 SMD code E2 BTS410E2
Text: • flE35b05 OOfllMBO T07 ■ SIEM EN S PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •
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flE35b05
BTS410E2
023Sb05
TQ-220AB/5
Q67060-S6102-A2
CPI05t6S
O-22QAB/5,
E3043
E3043
Q67060-S6102-A3
transistor SMD t07
SMD Transistor t07
BTS 302
BTS 410 E2 E3043
STT 3 SIEMENS
transistor t07
circuit diagram obd diagnostic
bts 410d2
SMD code E2
BTS410E2
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t07 transistor smd
Abstract: smd transistor 2T6 SMD Transistor t07
Text: • flE35b05 00fll430 T07 ■ SIEMENS PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •
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flE35b05
00fll430
BTS410E2
fl23Sb05
O-220AB/5
410E2
O-22QAB/5,
E3043
Q67060-S6102-A2
410E2
t07 transistor smd
smd transistor 2T6
SMD Transistor t07
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AF139
Abstract: OOQ405 mz 1540
Text: ESC D • flE35t.05 0004056 T B IS IE G t n PNP Germanium RF Transistor AF139 -SIEMENS AKTIENGESELLSCHAF - ~ T ~ 3 I~ 0 7 for input stages, mixer and oscillator stages up to 8 6 0 M H z AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads
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OOQ405Ã
AF139
Q60106-X139
200MHz-
A800MHZ-
AF139
10lHHz
OOQ405
mz 1540
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siemens sab 82532
Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Text: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
235b05
82532N-10.
00702fl2
siemens sab 82532
82258
SA 82532
SAB 80286
csc 2323
sab80286
STT 3 SIEMENS
80286 microprocessor pin out diagram
ESCC2
siemens sab 82525
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bts 43202
Abstract: BTS432E2-E3062A BTS 732 3H DIODE smd smd transistor jst BTS432E2 E3062A SMD code E2 thermal overload relay fas E3043 Q67060-S6202-A2
Text: • 0235bOS ODfilMTb TTT SIEMENS PROFET BTS 432 E2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 80 M_oad dump Clamp of negative voltage at output 58 V bb-VouT Avalanche Ciatnp
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0235bOS
fl23Sb05
O-220AB/5
Q67060-S6202-A2
CPT0SI65
O-22QAB/5,
E3043
Q67060-S6202-A4
bts 43202
BTS432E2-E3062A
BTS 732
3H DIODE smd
smd transistor jst
BTS432E2 E3062A
SMD code E2
thermal overload relay fas
Q67060-S6202-A2
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PLCC-68 8051 siemens
Abstract: 80C32 smd marking b4h smd marking code fj FET 80C515 80C535 80c535-n ma A235 sab-80535 SMD MARKING CODE E2H
Text: I flB3SbOS 0002020 321 SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80CS35/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only
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80C515/80C535
80C515/80C515-16
80C535/80C535-16
80C515
16-bit
8235b05
MQFP-80
0H35b05
PLCC-68 8051 siemens
80C32
smd marking b4h
smd marking code fj FET
80C535
80c535-n
ma A235
sab-80535
SMD MARKING CODE E2H
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Q67100-H5092
Abstract: SDA 2516-5
Text: S IE M E N S Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • • • • • • • • • • W ord-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V
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Q67100-H5092
00b3272
SDA 2516-5
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tca 335 A
Abstract: tca 765 TCA335A
Text: 47E ]> • fl23SbOS □□3L b4fl 5 ■ SIEG SIEMENS AKTIENGESELLSCHAF T -1 ^ - O lSingle Operational Amplifier with Darlington Input O TCA 332 TCA 335 Features • • • • • • • • • \ Bipolar 1C High input impedance Wide common-mode range Large supply-voltage range
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fl23SbOS
Q67000-A2272
Q67000-A227Ã
fl235b05
0034b5M
TCA335
tca 335 A
tca 765
TCA335A
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 16Mx 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time: 50 ns (-50 version)
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3164400J/T
3165400J/T
3164400J/T-50)
3164400J/T-60)
3165400J/T-50)
3165400J/T-60)
0235bD5
400J/T-50/-60
235b05
0Q71b5b
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Untitled
Abstract: No abstract text available
Text: D • A235bOS DDBlEEfl 1 M S I E G XX, , SIEMENS AKTIEN GE SEL LSCHAF T-52.-33-5S SAB 82289 Bus Arbiter for SAB 80286 Processors SAB 82289-6 up to 12 MHz SAB 82289 up to 16 MHz • S upports m u ltim aster system bus arbitration protocol • Synchronizes SAB 80286 processor w ith
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A235bOS
-33-5S
S07HOLD
fl235b05
00312b!
T-52-33-55
82289-P
Q67020-Y77
82289-6-P
Q67120-Y111
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Untitled
Abstract: No abstract text available
Text: 47E D SIEMENS • ÔE35bD5 □03101,0 b « S I E G SIEMENS AK TIE NG ESE LLSCHAF ^ 5 3 - 3 3 - ^ Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Preliminary • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,
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E35bD5
8-/16-Bit
16-bit
16/8-bit
flS35b05
T-52-33-7g
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Untitled
Abstract: No abstract text available
Text: 6 2 3 5 b O S 0 0 6 1 3 1 4 =163 S IE M E N S HITFET BTS 917 Smart Lowside Power Switch Product Summary Features • • • • • • • • • • • Logic Level Input Continious drain source voltage Input protection ESD On-state resistance Thermal shutdown
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235bD5
TQ220/5_
T0220/5
Q67060-S6700-A2
E3062A
E3043
Q67060-S6700-A3
Q67060-S6700-A4
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Untitled
Abstract: No abstract text available
Text: bOE D I fl235b05 QD5G42Ô 7b7 SIEMENS S IC K N S ISIEG A K 7 -iE N 6 e LLSC H AF Dual Power Operational Amplifier TCA 2465 Bipolar 1C Features • High output peak current of twice 2.5 A • Twice 2.0 A output peak current for TCA 2465 G • Large supply voltage range up to 42 V
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fl235b05
QD5G42Ã
P-DIP-16
Q67000-A8109
Q67000-A8110
Q67000-A8334
P-DSO-20-1
235bG5
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Untitled
Abstract: No abstract text available
Text: SIEMENS 256 K x 16-Bit Dynamic RAM HYB 514171BJ-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-60/-70 Advanced Inform ation 262 144 w ords by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time Low Power dissipation
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16-Bit
514171BJ-60/-70
16-Bit
514171BJL-60/-70
23SbOS
00713S?
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2 M X 8-Bit Dynamic RAM 2 k-refresh HYB 5117800AJ-50/-60/-70/-80 Prelim inary Inform ation • • • • • • • • • • • • 2097152 words by 8-bit organization 0 to 70 'C operating temperature Fast access and cycle time RAS access time:
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5117800AJ-50/-60/-70/-80
235b05
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