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Catalog Datasheet	MFG & Type	PDF	Document Tags
Q67100-Q3018 Abstract: Q67100-Q3019 Text: SIEM EN S 8M X 36-Bit EDO-DRAM Module HYM 368035S/GS-60 Advanced Inform ation • 8 388 608 words by 36-Bit organization in 2 banks • Fast access and cycle time 60 ns RAS access time 15 ns CAS access tim e 104 ns cycle time • Hyper page mode EDO capability	OCR Scan	PDF	36-Bit 368035S/GS-60 L-SIM-72-17) L-SIM-72-17 Q67100-Q3018 Q67100-Q3019
STT 3 SIEMENS 431 Abstract: 80c517 Siemens sab 2793b-p Text: bOE D • fl2 3 5 fc iO S G G H 7T23 S IE M E N S SIEMENS 152 « S IE G A K T IE N G E S E L L S C H A F ^ High-Performance 8-Bit CMOS Single-Chip Microcontroller ^ e=r - / 9 - o 7 SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM	OCR Scan	PDF	80C517 80C537 80C517/80C537 32-bit 16-bit 80C515 023SbOS 80C517/83C537 P-LCC-84 STT 3 SIEMENS 431 Siemens sab 2793b-p
Untitled Abstract: No abstract text available Text: SIEMENS 16M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)	OCR Scan	PDF	72-Bit 72V1600GS-50/-60 72V1610GS-50/-60 023St HYM72V1600/10GS-50/-60 72-ECC L-DIM-168-7 16MX72 DM168-7
Untitled Abstract: No abstract text available Text: BSO 220N Infineon t«ehneiog¡«i Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Dual N Channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 20 V ^fos on	OCR Scan	PDF	BS0220N Q67000-S4010 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã D13377T
Untitled Abstract: No abstract text available Text: BCP29 BCP 49 S IE M E N S Electrical Characteristics at Tk - 25 "C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage lc = 1 mA, I b = 0 BCP 29 BCP 49 Vibrjceo Collector-base breakdown voltage	OCR Scan	PDF	BCP29 fiE35bQ5
Untitled Abstract: No abstract text available Text: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code	OCR Scan	PDF	BFP183W Q62702-F1503 OT-343 fiE35bQ5 900MHz c15mA fl535b05
Untitled Abstract: No abstract text available Text: SIEMENS TEMPFET BTS115A Features • • • • • N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin Type v DS B TS 115A 50 V ^OS<on 0.12 Í2 h 15.5 A 1 2 3 G D	OCR Scan	PDF	BTS115A O-22QAB C67078-S5004-A2 fl235bG5 C67078-S5004-A8 GPD0SI64 fl235b05
Untitled Abstract: No abstract text available Text: SIEMENS BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz F = 1.5 dB at 900MHz	OCR Scan	PDF	900MHz BFG196 Q62702-F1292 OT-223 fl235bG5 fl235b05 D1217Ã