FET J202
Abstract: siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent 2N4392 2N4393 J112 j112 fet
Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and a
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AN103
PN4117A
SST4117
2N4117A
PN4118A
SST4118
2N4118A
PN4119A
SST4119
2N4119A
FET J202
siliconix fet data book
J113 equivalent
CR180
datasheet j201 jfet
J201 equivalent
2N4392
2N4393
J112
j112 fet
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FET J202
Abstract: transistor j201 high impedance current sources -rs 2N4393 j112 fet siliconix fet data book Transistor J304 Siliconix 2n Siliconix FET siliconix fet 2N4392
Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and
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AN103
PN4117A
SST4117
2N4117A
PN4118A
SST4118
2N4118A
PN4119A
SST4119
2N4119A
FET J202
transistor j201
high impedance current sources -rs
2N4393
j112 fet
siliconix fet data book
Transistor J304 Siliconix
2n Siliconix FET
siliconix fet
2N4392
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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2N4393
Abstract: FET J202 siliconix fet j112 fet siliconix fet data book pn4117a transistor j201 FET J506 J112 jfet 2n4339
Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and
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AN103
PN4117A
SST4117
2N4117A
PN4118A
SST4118
2N4118A
PN4119A
SST4119
2N4119A
2N4393
FET J202
siliconix fet
j112 fet
siliconix fet data book
pn4117a
transistor j201
FET J506
J112 jfet
2n4339
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ZVP2110A
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use ZVP2110A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω G REFER TO ZVP2110A FOR GRAPHS D G D S E-Line TO92 Compatible
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ZVP2110A
ZVP2110C
ZVP2110A
-375mA
-375mA
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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transistor
Abstract: transistor mp40 BIPOLAR TRANSISTOR mp25 TRANSISTOR FET 8PIN MP40 SERIES small signal audio FET transistor TO220 MP40 high hfe transistor
Text: Road map Transistor Package Function / Application Bipolar Transistor Bipolar Transistor MOS FET Low VCE sat Transistor VDSS - ID(DC) (Small Signal MOS FET) High hFE Transistor 4VGate Driven Series Low Voltage, High Speed Switching Transistor 2.5VGate Driven Series
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X13769XJ2V0CD00
O-126)
MP-25
O-220)
MP-40
MP-45,
MP-45F
MP-25
MP-80
transistor
transistor mp40
BIPOLAR TRANSISTOR
mp25 TRANSISTOR
FET 8PIN
MP40 SERIES
small signal audio FET
transistor TO220
MP40
high hfe transistor
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transistor k2541
Abstract: K1398 J411 fet k1482 K1484 K679A k2541 k1272 transistor k1272 K1274
Text: SMALL-SIGNAL MOS FET SERIES Signal MOS FET A wide line-up from small-signal interface applications to semi-power switching applications Small-signal MOS FETs have been increasingly employed mainly in portable systems as highperformance switching elements that supersede the existing bipolar transistors.
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D11050EJ4V0PF00
transistor k2541
K1398
J411 fet
k1482
K1484
K679A
k2541
k1272
transistor k1272
K1274
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P-Channel Enhancement Mode Vertical DMOS FET
Abstract: ZVP2120A ZVP2120C
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS
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ZVP2120C
ZVP2120A
ZVP2120A
-150mA
P-Channel Enhancement Mode Vertical DMOS FET
ZVP2120C
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ZVP2120A
Abstract: to92 fet p channel DSA003787
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS
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ZVP2120C
ZVP2120A
ZVP2120A
to92 fet p channel
DSA003787
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to92 fet p channel
Abstract: ZVP2110A ZVP2110C P-Channel Enhancement Mode Vertical DMOS FET
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110A ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω G REFER TO ZVP2110A FOR GRAPHS
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ZVP2110C
ZVP2110A
ZVP2110A
-375mA
to92 fet p channel
ZVP2110C
P-Channel Enhancement Mode Vertical DMOS FET
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ZVP2120A
Abstract: P-Channel FET 100v to92
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS
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ZVP2120C
ZVP2120A
ZVP2120A
P-Channel FET 100v to92
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ZVP2110A
Abstract: P-Channel FET 100v to92 to92 fet p channel DSA003787
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω G REFER TO ZVP2110A FOR GRAPHS
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ZVP2110C
ZVP2110A
ZVP2110A
P-Channel FET 100v to92
to92 fet p channel
DSA003787
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Untitled
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use ZVP2120A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω G REFER TO ZVP2120A FOR GRAPHS D G D S E-Line
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ZVP2120A
ZVP2120C
ZVP2120A
-150mA
-150mA
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ZVN4306A
Abstract: DSA003784
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306A ISSUE 3 – JULY 94 FEATURES * 60 Volt VDS * RDS on = 0.33Ω * Spice model available D G APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.
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ZVN4306A
ZVN4306A
DSA003784
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ZVNL120A
Abstract: ZVNL120C
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVNL120C ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω * Low threshold APPLICATIONS * Telephone handsets G D S E-Line TO92 Compatible REFER TO ZVNL120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZVNL120C
ZVNL120A
250mA
ZVNL120C
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DS200
Abstract: ZVN0120A ZVN0124A DSA003781
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =16Ω APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible REFER TO ZVN0124A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE
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ZVN0120A
ZVN0124A
250mA
DS200
ZVN0120A
DSA003781
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Untitled
Abstract: No abstract text available
Text: DISCONTINUED PLEASE USE ZVN4424A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424A/C ZVN4424A/C ISSUE 3 – August 1994 FEATURES * Compact E-LINE TO92 style package * 240 Volt BVDS * RDS(on)=4.3Ω Typical at VGS=2.5V * Low threshold * Fast switching
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ZVN4424A
ZVN4424A/C
ZVN4424
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fet 2n7000
Abstract: 2N7000
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7000 ISSUE 2– NOVEMBER 94 S G D TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCES 60 V Continuous Drain Current ID 0.2 A Pulsed Drain Current IDM 0.5 A Gate Source Vootage
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2N7000
500mA
200mA
fet 2n7000
2N7000
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ZVN4206A
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use ZVN4206A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206C ISSUE 2 JUNE 94 FEATURES * 60 Volt VDS * RDS on = 1 Ω G D S E-LINE TO92 COMPATIBLE REFER TO ZVN4206A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZVN4206A
ZVN4206C
ZVN4206A
500mA
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2n5555 Vgs(off)
Abstract: 2N5555 CS 150 10v
Text: 2N5555 ♦I N-CHANNEL FET JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5555 type is an Silicon N Channel Junction FET designed for switching, RF amplifier and mixer applications where low capacitance is desired. MAXIMUM RA T I N G S Tfl=25°C unless otherwise noted
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2N5555
2n5555 Vgs(off)
CS 150 10v
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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MIP504
Abstract: TO-92NL TO92NL 3sk287 3SK282 "Intelligent Power Device"
Text: FET, IGBT, IPD • IPDs Intelligent Power Device (continued) Application Output Breakdown Input Voltage Voltage Type No. V Non-insulation A M IP 4 0 3 type power supply Packa ge Output MOS FET Features 25mA (at 5V) • O v e r cu rre n t protection built-in
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MIP803
15/70mA
140kHz
140kH2
MIP80ute
3SK241
3SK272
3SK273
3SK287
3SK282
MIP504
TO-92NL
TO92NL
3SK282
"Intelligent Power Device"
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transistor C5080
Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Text: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295
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3SK228
3SK239A
3SK309
3SK186
3SK295
3SK194
BB101M
BB101C
3SK296
2SC2732
transistor C5080
transistor 2SC458
C5247
Transistor 2SA 2SB 2SC 2SD
transistor 2sc1515
2SC1755A
transistor f 20 nf
C5246
A1052
C4965
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