EUDYNA
Abstract: FSX017X/001 FSX017X
Text: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high
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FSX017LG/001
FSX017X/001
FSX017/001
FSX017LG/001
RATINGS4888
EUDYNA
FSX017X/001
FSX017X
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FSX017X/001
Abstract: bonder Fsx017LG fujitsu gaas fet
Text: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017X/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high
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FSX017LG/001
FSX017X/001
FSX017X/001
FSX017LG/001
FCSI0598M200
bonder
Fsx017LG
fujitsu gaas fet
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BF862
Abstract: BP317 MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Preliminary specification 1999 Jun 29 Philips Semiconductors Preliminary specification N-channel junction FET BF862 PINNING SOT23 FEATURES • High transition frequency for excellent sensitivity in
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M3D088
BF862
MSB003
125004/00/01/pp7
BF862
BP317
MSB003
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BF997
Abstract: Philips MKP dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF997
OT143
BF997
Philips MKP
dual-gate
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BF997
Abstract: Dual-Gate Mosfet dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF997
OT143
BF997
Dual-Gate Mosfet
dual-gate
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BF862
Abstract: marking code 2Ap transistor 2Ap nxp marking code MCD809 MCD815 10102F fet bf862 nxp 102 MCD814
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 NXP Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition frequency for excellent sensitivity in
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M3D088
BF862
MAM036
R77/03/pp11
BF862
marking code 2Ap
transistor 2Ap
nxp marking code
MCD809
MCD815
10102F
fet bf862
nxp 102
MCD814
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AD8066
Abstract: AD8065 ad8065 photodiode C8 SOT23-5 G.2 SOT23-5 C8 SOT23 c.8 sot23-5
Text: PRELIMINARY TECHNICAL DATA a High Performance High-Speed FAST FET TM OP AMP Preliminary Technical Data AD8065/AD8066 CONNECTION DIAGRAMS TOP VIEW FEATURES FET Input Amplifier Single, Dual Low Cost High Speed 150MHz, –3 dB Bandwidth (G = +1) 180V/ µ s Slew Rate
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AD8065/AD8066
150MHz,
OT23-5,
OT23-5
AD8066
AD8065
ad8065 photodiode
C8 SOT23-5
G.2 SOT23-5
C8 SOT23
c.8 sot23-5
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bf862
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 NXP Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition frequency for excellent sensitivity in
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M3D088
BF862
MAM036
R77/03/pp11
bf862
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BF862
Abstract: marking code 2Ap fet junction n-channel transistor transistor 2ap Silicon N-Channel Junction FET sot23 fet-bf862 10102F SOT-23 marking code 2ap
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 Philips Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition frequency for excellent sensitivity in
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M3D088
BF862
MAM036
125004/03/pp12
BF862
marking code 2Ap
fet junction n-channel transistor
transistor 2ap
Silicon N-Channel Junction FET sot23
fet-bf862
10102F
SOT-23 marking code 2ap
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MUSES01
Abstract: muses riaa eq MUSES01D
Text: MUSES01 High Quality Audio , J-FET Input, Dual Operational Amplifier The MUSES01 is a dual J-FET input high quality audio operational amplifier, which is optimized for high-end audio and professional audio applications with advanced circuitry and layout, unique material and assembled technology by
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MUSES01
MUSES01
200pA
800pA
105dB
muses
riaa eq
MUSES01D
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G10 sot23
Abstract: No abstract text available
Text: PRELIMINARY TECHNICAL DATA a 550MHz GBWP Precision FAST FET TM OP AMP Preliminary Technical Data AD8067 FEATURES CONNECTION DIAGRAM TOP VIEW FET Input Amplifier 1pA Input Bias Current Stable for gains of ≥8 Low Cost High Speed 55MHz, –3 dB Bandw idth (G = +10)
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550MHz
AD8067
55MHz,
-100dB
OT23-5
G10 sot23
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Untitled
Abstract: No abstract text available
Text: Data Sheet High Gain Bandwidth Product, Precision Fast FET Op Amp AD8067 FEATURES CONNECTION DIAGRAM TOP VIEW FET input amplifier: 0.6 pA input bias current Stable for gains ≥8 High speed 54 MHz, −3 dB bandwidth (G = +10) 640 V/µs slew rate Low noise
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OT-23-5
AD8067
g067ARTZ-REEL7
AD8067ARTZ-R2
AD8067ART-EBZ
OT-23
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AD8067ART-EBZ
Abstract: sot-23 JFET
Text: Data Sheet High Gain Bandwidth Product, Precision Fast FET Op Amp AD8067 FEATURES CONNECTION DIAGRAM TOP VIEW FET input amplifier: 0.6 pA input bias current Stable for gains ≥8 High speed 54 MHz, −3 dB bandwidth (G = +10) 640 V/µs slew rate Low noise
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OT-23-5
AD8067
g067ARTZ-REEL7
AD8067ARTZ-R2
AD8067ART-EBZ
OT-23
AD8067ART-EBZ
sot-23 JFET
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NJM8920
Abstract: MUSES8920
Text: MUSES8920 High Quality Audio J-FET Input Dual Operational Amplifier • GENERAL DESCRIPTION The MUSES8920 is a high quality Audio J-FET input dual operational amplifier. This is a mass production model of MUSES Series. By inheriting MUSES Technology we pursued in the "MUSES series", the
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MUSES8920
MUSES8920
NJM8920
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Untitled
Abstract: No abstract text available
Text: Data Sheet High Gain Bandwidth Product, Precision Fast FET Op Amp AD8067 CONNECTION DIAGRAM TOP VIEW FEATURES FET input amplifier: 0.6 pA input bias current Stable for gains ≥8 High speed 54 MHz, −3 dB bandwidth (G = +10) 640 V/µs slew rate Low noise
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AD8067
OT-23-5
OT-23
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MUSES8920
Abstract: MUSE8920 MUSES8920D MUSES8920E NJM8920 muses riaa
Text: MUSES8920 High Quality Audio J-FET Input Dual Operational Amplifier • GENERAL DESCRIPTION The MUSES8920 is a high quality Audio J-FET input dual operational amplifier. This is a mass production model of MUSES Series. By inheriting MUSES Technology we pursued in the "MUSES series", the
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MUSES8920
MUSES8920
MUSE8920
MUSES8920D
MUSES8920E
NJM8920
muses
riaa
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2 anode igbt inverter circuit diagram
Abstract: IGBT control circuit for inverter power inverter circuit diagram circuit diagram of refrigerator pc929 pwm mosfet dc ac inverter ac dC converter circuit diagram 12v inverter circuit inverter circuit diagram 12V DC converter circuit diagram
Text: Application Note Photocoupler Motor Drive Circuit PC923X/PC924X DC + VCC O1 interface Anode + VCC1=12V + VCC2=12V O2 Cathode TTL, MCU GND U V W MOS-FET or IGBT LOAD Recommended Mode Bipolar Transistor PC942 MOS-FET / IGBT DC(-) PC923X or PC924X or PC928 or PC929
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PC923X/PC924X
PC942
PC923X
PC924X
PC928
PC929
12kHz
25kHz
PC928
50kHz
2 anode igbt inverter circuit diagram
IGBT control circuit for inverter
power inverter circuit diagram
circuit diagram of refrigerator
pc929
pwm mosfet dc ac inverter
ac dC converter circuit diagram
12v inverter circuit
inverter circuit diagram
12V DC converter circuit diagram
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Untitled
Abstract: No abstract text available
Text: FET Input Analog Front End with ADC Driver ADA4350 Data Sheet FEATURES GENERAL DESCRIPTION Low noise, low input bias current FET input amplifier Very low input bias current: ±0.25 pA typical at 25°C Low input voltage noise 92 nV/√Hz typical at 10 Hz at 5 V
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ADA4350
typical/65
MO-153-AE
28-Lead
RU-28)
ADA4350ARUZ
ADA4350ARUZ-R7
EVAL-ADA4350RUZ-P
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LM103 zener
Abstract: jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
Text: FET Circuit Applications FET Circuit Applications National Semiconductor Application Note 32 February 1970 Polycarbonate dielectric TL H 6791 – 1 Sample and Hold With Offset Adjustment The 2N4339 JFET was selected because of its low lGSS k100 pA very-low lD(OFF) (k50 pA) and low pinchoff volt-
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2N4339
2N4393
2N4393
LM103 zener
jfet cascode
2N3069
J FET RF Cascode Input
2N3070
FM3954
pierce crystal oscillator
2n4416 jfet
HI-FI tone control transistors
FM1208
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AD8066
Abstract: AD8515 jfet discrete differential transistor AD8033 AD8065 High Speed Amplifiers XFC-B AD8620 ultrasound transducer transformer AD628
Text: ADI-4789 Amplifiers 6/3/02 5:53 PM Page 1 Amplifiers July 2002 T H E IN THIS ISSUE Low Cost FET Input Amplifiers Low Cost FastFETs . . . . . . . . . . . . . . . . . . . . . 2 hen it came to using FET-input amplifiers, it used to be that the inexpensive ones didn’t have
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ADI-4789
AD8515ital
AD8369
AMPS-JULY-2002
AD8066
AD8515
jfet discrete differential transistor
AD8033
AD8065
High Speed Amplifiers
XFC-B
AD8620
ultrasound transducer transformer
AD628
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M5238AL
Abstract: riaa M5221 m5238 12 pin stereo amplifier
Text: MITSUBISHI ICS AV COMMON M5238AL/P/FP DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS DESCRIPTION The M5238 is a semiconductor integrated circuit designed as a low-noise Bi-FET operational amplifier which adopts J-FETs in the input stage. Noise reduction characteristic in
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M5238AL/P/FP
M5238
M5221
M5238AL
riaa
12 pin stereo amplifier
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M5238L
Abstract: M5238 m5238p M5221 integrated circuit M5238
Text: MITSUBISHI ICS AV COMMON M5238AL/P/FP DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS DESCRIPTION The M5238 is a semiconductor integrated circuit designed as a low-noise Bi-FET operational amplifier which adopts J-FETs in the input stage. Noise reduction characteristic in
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M5238AL/P/FP
M5238
M5221
30kHz)
0019i(
M5238L
m5238p
integrated circuit M5238
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M5238L
Abstract: m5238 M5238P M5238AL M5221 riaa phono preamplifier Gv40dB RS-100K
Text: MITSUBISHI ICS AV COMMON M5238AL/P/FP DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS DESCRIPTION The M5238 is a semiconductor integrated circuit designed as a low-noise Bi-FET operational amplifier which adopts J-FETs in the input stage. Noise reduction characteristic in
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M5238AL/P/FP
M5238
M5221
30kHz)
0019i(
M5238L
M5238P
M5238AL
riaa
phono preamplifier
Gv40dB
RS-100K
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M5238
Abstract: M5238A
Text: MITSUBISHI ICS AV COMMON M5238AL/P/FP DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS DESCRIPTION The M5238 is a semiconductor integrated circuit designed as a low-noise Bi-FET operational amplifier which adopts J-FETs in the input stage. Noise reduction characteristic in
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M5238AL/P/FP
M5238
M5221
M5238A
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