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onsemi FDP8N50NZ MOSFET N-CH 500V 8A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDP8N50NZ	Tube			1,000	1 - 10 - 100 - 1000 $0.70237 10000 $0.70237	Buy Now
TME	FDP8N50NZ				1	1 $1.2 10 $0.94 100 $0.85 1000 $0.8 10000 $0.8	Get Quote

FDP8N50NZ Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FDP8N50NZ		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V TO-220AB-3		Original	PDF

FDP8N50NZ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS on = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS	Original	PDF	FDP8N50NZ FDPF8N50NZ
Untitled Abstract: No abstract text available Text: FDP8N50NZU / FDPF8N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 6.5 A, 1.2 Ω Features Description • R UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state	Original	PDF	FDP8N50NZU FDPF8N50NZU 50nsec
Untitled Abstract: No abstract text available Text: UniFET-IITM FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET 500V, 7A, 1Ω Features Description • RDS on = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A • Low Gate Charge ( Typ. 14nC) This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS	Original	PDF	FDP8N50NZF FDPF8N50NZF
Untitled Abstract: No abstract text available Text: UniFET FDP8N50NZ / FDPF8N50NZT N-Channel MOSFET 500V, 8A, 0.85Ω Features Description • RDS on = 0.77Ω ( Typ.) @ VGS = 10V, ID = 4A • Low Gate Charge ( Typ. 14nC) This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS	Original	PDF	FDP8N50NZ FDPF8N50NZT
Untitled Abstract: No abstract text available Text: UniFET FDP8N50NZ / FDPF8N50NZ tm N-Channel MOSFET 500V, 8A, 0.85 Features Description • RDS on = 0.77 ( Typ.) @ VGS = 10V, ID = 4A • Low Gate Charge ( Typ. 14nC) This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS	Original	PDF	FDP8N50NZ FDPF8N50NZ
Untitled Abstract: No abstract text available Text: FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS on = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and	Original	PDF	FDP8N50NZ FDPF8N50NZ
FDPF8N50NZF Abstract: No abstract text available Text: UniFET-II FDP8N50NZF / FDPF8N50NZF tm N-Channel MOSFET 500V, 7A, 1 Features Description • RDS on = 0.85 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS	Original	PDF	FDP8N50NZF FDPF8N50NZF FDPF8N50NZF
Untitled Abstract: No abstract text available Text: UniFET-II FDP8N50NZU / FDPF8N50NZU tm N-Channel MOSFET 500V, 6.5A, 1.2 Features Description • RDS on = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are prod uced using F airchild's pro prietary, planar str ipe, DMOS	Original	PDF	FDP8N50NZU FDPF8N50NZU
FDPF8N50NZ Abstract: FDP8N50NZ Text: UniFET FDP8N50NZ / FDPF8N50NZ tm N-Channel MOSFET 500V, 8A, 0.85 Features Description • RDS on = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS	Original	PDF	FDP8N50NZ FDPF8N50NZ FDPF8N50NZ
FDP8N50NZ Abstract: No abstract text available Text: UniFET FDP8N50NZ / FDPF8N50NZT N-Channel MOSFET 500V, 8A, 0.85Ω Features Description • RDS on = 0.77Ω ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS	Original	PDF	FDP8N50NZ FDPF8N50NZT
FDPF8N50NZU Abstract: BVDSS 65AVDD Text: UniFET-II FDP8N50NZU / FDPF8N50NZU tm N-Channel MOSFET 500V, 6.5A, 1.2 Features Description • RDS on = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are prod uced using F airchild's pro prietary, planar str ipe, DMOS	Original	PDF	FDP8N50NZU FDPF8N50NZU FDPF8N50NZU BVDSS 65AVDD
FDPF8N50 Abstract: FDPF8N50NZU FDP8N50NZU Text: FDP8N50NZU / FDPF8N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 6.5 A, 1.2 Ω Features Description • R UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state	Original	PDF	FDP8N50NZU FDPF8N50NZU FDPF8N50NZU FDPF8N50
fdp8n50nz Abstract: No abstract text available Text: FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS on = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and	Original	PDF	FDP8N50NZ/ FDPF8N50NZ FDP8N50NZ FDPF8N50NZ
FDPF8N50 Abstract: No abstract text available Text: UniFET-IITM FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET 500V, 7A, 1Ω Features Description • RDS on = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS	Original	PDF	FDP8N50NZF FDPF8N50NZF FDPF8N50NZF FDPF8N50