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    FDC8886 Search Results

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    FDC8886 Price and Stock

    onsemi FDC8886

    MOSFET N-CH 30V 6.5/8A SUPERSOT6
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    DigiKey FDC8886 Digi-Reel 11,698 1
    • 1 $0.84
    • 10 $0.524
    • 100 $0.84
    • 1000 $0.23489
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    FDC8886 Cut Tape 11,698 1
    • 1 $0.84
    • 10 $0.524
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    • 1000 $0.23489
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    FDC8886 Reel 6,000 3,000
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    Avnet Americas FDC8886 Reel 13 Weeks 6,000
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    Mouser Electronics FDC8886 6,206
    • 1 $0.58
    • 10 $0.395
    • 100 $0.27
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    Newark FDC8886 Reel 3,000
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    Future Electronics FDC8886 Reel 13 Weeks 6,000
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    Onlinecomponents.com FDC8886
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    Rochester Electronics FDC8886 127,596 1
    • 1 $0.1832
    • 10 $0.1832
    • 100 $0.1722
    • 1000 $0.1557
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    TME FDC8886 3
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    • 10 $0.344
    • 100 $0.264
    • 1000 $0.237
    • 10000 $0.221
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    Richardson RFPD FDC8886 6,000
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    Avnet Silica FDC8886 14 Weeks 3,000
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    EBV Elektronik FDC8886 15 Weeks 3,000
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    Rochester Electronics LLC FDC8886

    SMALL SIGNAL FIELD-EFFECT TRANSI
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    DigiKey FDC8886 Bulk 1,575
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    • 10000 $0.19
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    Aptina Imaging FDC8886

    Trans MOSFET N-CH 30V 6.5A 6-Pin TSOT-23 T/R
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    Verical FDC8886 2,970 38
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    • 100 $0.2348
    • 1000 $0.1712
    • 10000 $0.158
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    Fairchild Semiconductor Corporation FDC8886

    FDC8886 - 30V N-Channel Power Trench MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FDC8886 18,000 1
    • 1 $0.1832
    • 10 $0.1832
    • 100 $0.1722
    • 1000 $0.1557
    • 10000 $0.1557
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    FDC8886 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDC8886 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 6-SSOT Original PDF

    FDC8886 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MARKING 886

    Abstract: FDC8886
    Text: FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8886 FDC8886 MARKING 886 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8886 FDC8886 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description ̈ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8886 PDF