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    F12 SMD TRANSISTOR Search Results

    F12 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    F12 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking F12

    Abstract: F12 MARKING 2SC4178
    Text: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4178 Features Micro package. High gain bandwidth product. Low output capacitance. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage


    Original     		PDF 2SC4178 100MHz marking F12 F12 MARKING 2SC4178

    transistor SMD f12

    Abstract: f12 SMD TRANSISTOR transistor sot23 f12 smd transistor marking F12 F13 SOT23 f13 sot-23 2SC2223 F12 MARKING
    Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC2223 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High gain bandwidth product fT=600MHz TYP 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Cob=1.0PF TYP +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low output capacitance.


    Original     		PDF 2SC2223 OT-23 600MHz 100MHz transistor SMD f12 f12 SMD TRANSISTOR transistor sot23 f12 smd transistor marking F12 F13 SOT23 f13 sot-23 2SC2223 F12 MARKING

    A7 SMD TRANSISTOR

    Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is


    Original     		PDF HS-6664RH HS-6664RH HS6664R A7 SMD TRANSISTOR SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor

    A7 SMD TRANSISTOR

    Abstract: SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8K x 8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process,


    Original     		PDF HS-6664RH HS-6664RH A7 SMD TRANSISTOR SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10

    MP6101

    Abstract: Power MOSFET, P, toshiba mp4002 mp4002 MP4004 toshiba mp6101 MP3202 mp6401 mp6401 toshiba SWITCH PIN DIODE MP6002 mp6002
    Text: Power Modules PRODUCT GUIDE CONTENTS 1. 2. 3. 4. 5. 6. Product List Introduction to the Products and Their Features Structure and Dimensions Power Module Packages System Diagram of Power Module Products Power Module Product Matrix 7. Product Line-ups Listed by Package


    Original     		PDF MP4005~ MP4101~ MP4301~ MP6301 MP4501~ MP6901 S-10M MP4208~ S-12M MP4410~ MP6101 Power MOSFET, P, toshiba mp4002 mp4002 MP4004 toshiba mp6101 MP3202 mp6401 mp6401 toshiba SWITCH PIN DIODE MP6002 mp6002

    dynamic ram binary cell

    Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
    Text: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of


    Original     		PDF HS-65647RH HS-65647RH dynamic ram binary cell A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC

    P517c

    Abstract: TP-105-01-00 IC1 LM317 CRYSTAL CMAC IC144 72a2 IC147 9341-3SL demodulator register TP-105-01-02
    Text: TRF6900 Evaluation Board User’s Guide September 2000 Mixed-Signal RF Products SWRU001A IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original     		PDF TRF6900 SWRU001A P517c TP-105-01-00 IC1 LM317 CRYSTAL CMAC IC144 72a2 IC147 9341-3SL demodulator register TP-105-01-02

    lm317 smd L3

    Abstract: TP-105-01 IC144 TP-105-01-02 FMMT2222ATA LL4148 SMV1247 SN74LVT244BDW SWRU001 TRF6900
    Text: TRF6900 Evaluation Board User’s Guide August 2000 Mixed-Signal RF Products SWRU001 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original     		PDF TRF6900 SWRU001 lm317 smd L3 TP-105-01 IC144 TP-105-01-02 FMMT2222ATA LL4148 SMV1247 SN74LVT244BDW SWRU001 TRF6900

    88E1119R

    Abstract: 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide August 2012 Revision: EB62_01.5  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


    Original     		PDF 25MHz HDR40 ATS120SM-1 HC-49/US-SM 25MHZ 1K-0402SMT 20K-0402SMT 100PF-0402SMT 3UF-10V-0805SMT HC49US-25 88E1119R 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13

    88E1119R

    Abstract: 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide February 2012 Revision: EB62_01.4  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


    Original     		PDF HC49US-25 000MABJUB HC49/US 1K-0402SMT ERJ-2RKF3012X 1/10W 20K-0402SMT ERJ-2RKF2002X 100PF-0402SMT 88E1119R 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13

    npn transistor smd w19

    Abstract: LFE3-35E-FN484CES 88e1119r 88E1119 AA19 smd diode smd transistor w17 pDS4102-DL diode C238 88E111 FTD2232
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide July 2013 Revision: EB62_01.6  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


    Original     		PDF 25MHZ HC49US-25 000MABJUB HC49/US 1K-0402SMT ERJ-2RKF3012X 1/10W 20K-0402SMT ERJ-2RKF2002X npn transistor smd w19 LFE3-35E-FN484CES 88e1119r 88E1119 AA19 smd diode smd transistor w17 pDS4102-DL diode C238 88E111 FTD2232

    TP-105-01-00

    Abstract: TP-105-01-02 lm317 smd L3 TP-107-01 IC LM317 for dc 120 volts lm317 to-3 datasheet connector DB25m DB25M To DB25m Parallel cable Vishay-Liteon lm317 a 8 terminal
    Text: TRF6900 Evaluation Board User’s Guide May 2001 Mixed-Signal RF Products SWRU001C EVALUATION BOARD DISCLAIMER The enclosed evaluation boards are experimental printed circuit boards and are therefore only intended for device evaluation. We would like to draw your attention to the fact that these boards have been processed


    Original     		PDF TRF6900 SWRU001C TP-105-01-00 TP-105-01-02 lm317 smd L3 TP-107-01 IC LM317 for dc 120 volts lm317 to-3 datasheet connector DB25m DB25M To DB25m Parallel cable Vishay-Liteon lm317 a 8 terminal

    lm317 smd L3

    Abstract: TP-107 evm1ss TRF6900 Kit IC1 LM317 DB25M To DB25F Parallel cable FMMT2222ATA LL4148 TRF6900 TRF6900A
    Text: TRF6900 RF Evaluation Kit User’s Guide May 2001 Mixed-Signal RF Products SWRU001C EVALUATION BOARD DISCLAIMER The enclosed evaluation boards are experimental printed circuit boards and are therefore only intended for device evaluation. We would like to draw your attention to the fact that these boards have been processed


    Original     		PDF TRF6900 SWRU001C lm317 smd L3 TP-107 evm1ss TRF6900 Kit IC1 LM317 DB25M To DB25F Parallel cable FMMT2222ATA LL4148 TRF6900 TRF6900A

    LED backlight schematic laptop

    Abstract: smd transistor f24 sot23 elantech touch smd transistor 5d sot-23 strain gauge n6 EVQ-QS205K transistor SMD making code 3f alps encoder Diode smd f6 SMD TRANSISTOR j8
    Text: SH2165 PixiKey Programmable Keyboard Encoder & Force Stick Encoder HID & SYSTEM MANAGEMENT PRODUCTS, KEYCODER FAMILY The SH2165 PixiKey™ is a costeffective, high-functionality combination keyboard and mouse encoder which offers a programmable keyboard matrix and


    Original     		PDF SH2165 18-column LED backlight schematic laptop smd transistor f24 sot23 elantech touch smd transistor 5d sot-23 strain gauge n6 EVQ-QS205K transistor SMD making code 3f alps encoder Diode smd f6 SMD TRANSISTOR j8

    Untitled

    Abstract: No abstract text available
    Text: SPIO-4 Precision Signal-Path Controller Board Users' Guide December 2010 Table of Contents 1.0 SPIO-4 System Overview . 3 1.0 SPIO-4 System Overview . 3


    Original     		PDF

    transistor smd d9d

    Abstract: smd transistor r5c transistor SMD a10a 4E smd diode smd transistor d9d DC1652A
    Text: DEMO MANUAL DC2064A LTC3300-1/LTC6803-2 Bidirectional Cell Balancer DESCRIPTION Demonstration Circuit DC2064A is a bidirectional cell balancer using two LTC 3300-1 ICs to achieve active cell balancing of up to 12 Li-Ion batteries. The board uses the LTC6803-2 multi-cell addressable battery stack monitor to


    Original     		PDF DC2064A LTC3300-1/LTC6803-2 DC2064A LTC6803-2 LTC3300-1 DC2064A. LTC6803â DC590B transistor smd d9d smd transistor r5c transistor SMD a10a 4E smd diode smd transistor d9d DC1652A

    samsung s3c2440 user manual

    Abstract: schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet
    Text: H/W Design Guide System Controller S3C2440A 32-Bit RISC Microprocessor October, 2007 REV 1.0 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S3C2440A_H/W DESIGN GUIDE_REV 1.0 Important Notice


    Original     		PDF S3C2440A 32-Bit S3C2440A 22uF/36V 7uF/16V 47uF/16V MMBT3904 ATS49) 237X165X2t, samsung s3c2440 user manual schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet

    Untitled

    Abstract: No abstract text available
    Text: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times


    Original     		PDF 1x106 1x1014 1x1011 1x1012 1x10-10 HX6356 36-Lead

    honeywell sn f10

    Abstract: HX6356 A12 SMD TRANSISTOR Honeywell load cell
    Text: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times


    Original     		PDF HX6356 1x106 1x1014 1x1011 1x1012 1x10-10 honeywell sn f10 HX6356 A12 SMD TRANSISTOR Honeywell load cell

    HX6356

    Abstract: No abstract text available
    Text: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times


    Original     		PDF HX6356 1x106 1x1014 1x1011 1x1012 1x10-10 HX6356

    POWER1014A

    Abstract: sandisk micro sd card pin configuration RD1063 DIC20 AVX-31-5620-050-116-871 transistor SMD f12 0603 smt resistor POWR1014A SMD Transistor g16 DS3904U-020 T
    Text:  MachXO Control Development Kit User’s Guide October 2009 Revision: EB46_01.2  Lattice Semiconductor MachXO Control Development Kit User’s Guide Introduction Thank you for choosing the Lattice Semiconductor MachXO Control Development Kit! This guide describes how to start using the MachXO Control Development Kit, an easy-to-use platform for rapidly


    Original     		PDF

    FTN256

    Abstract: schematic diagram usb flash sandisk sandisk micro sd card pin configuration sandisk micro sd card circuit diagram 10K,DNI verilog code for delta sigma adc 8 bit dip switch FT232R USB UART SMD Transistor g16 CB20
    Text:  MachXO Control Development Kit User’s Guide June 2010 Revision: EB46_01.4  Lattice Semiconductor MachXO Control Development Kit User’s Guide Introduction Thank you for choosing the Lattice Semiconductor MachXO Control Development Kit! This guide describes how to start using the MachXO Control Development Kit, an easy-to-use platform for rapidly


    Original     		PDF

    Alc201A

    Abstract: HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN
    Text: Intel 852GME Interactive Client Reference Design User’s Guide October 2003 Order Number: 274000-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN


    Original     		PDF 852GME Alc201A HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Aerospace Electronics HX6356 32K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j.m Process (Left= 0.6 (im) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)


    OCR Scan     		PDF HX6356 1x106rad 1x101