E024A
Abstract: E018A E240D E240B E960B E040A WIRES bonding E025A E1200A
Text: Excelics Semiconductor, Inc. Recommended Wire Bonding For Excelics FETs E018A E024A Drain Bonding Wire Grounded Source Bonding Wires Gate Bonding Wire E025A E030C Drain Bonding Wire Drain Bonding Wires Grounded Source Grounded Source Bonding Wires Bonding Wires
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E018A
E024A
E025A
E030C
E040A
E060A
E240D,
E480C,
E720A,
E960B
E024A
E018A
E240D
E240B
E040A
WIRES
bonding
E025A
E1200A
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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EPA025A70
Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A
Text: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB
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RTC/10/01/98
EPA080A
12GHz
EPA060B
EPA040A
EPA025A
V/15mA
V/10mA
EPA025A70
EPA060B-70
EFA018A
EPA060B
EPA025
EPA025A
EPB018A5
EPA018A
EPA080A-70
EPA080A
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b1415
Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
Text: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs
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RTC/5/01/PSINTRO
24-hour
200oC,
275oC
b1415
GAAS FET CROSS REFERENCE
gaas fet 70 mil micro-X Package
power fet 70 mil micro-X Package
EPA240BV
N5 micro-X Package
EPA060B-70
MIXER EMA
0.5w ,GaAs FET
EPA480C-SOT89
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EPB018A5-70
Abstract: EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580
Text: Excelics Semiconductor, Inc. FETPL6, 9/99 EXCELICS PRODUCT LIST-I Super Low Noise High Gain Heterojunction FETs DEVICE TYPE SIZE um2 CHIP SIZE W(Gate)/Finger um2 um Bias N.F.* Ga* dB dB Freq. GHz Idss mA Bvgd* Freq. Range V Remark A.) Chips: EPB018A5 0.3x180
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EPB018A5
3x180
320X290
EPB018A7
EPB018A9
EPB025A
EPB018A5-70
EPB018A7-70
8664
EPB025A
EPB018A7
EPB018A9
EPB018A9-70
EPB025A-70
EPB018A5
1580
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Si3N4
Abstract: No abstract text available
Text: EXCELICS SEMICONDUCTOR, INC. ADVANTAGES OF EXCELICS POWER FETS • High P-1: Typical Past-P-1<0.7dBm. • High Gain, High ft fmax and High PAE. • High IP3: Typical 13dB above P-1 for GaAs FETs & 8dB above P-1 for Hetero-junction FETs. • Excellent Noise Figures, Particularly at Low Frequency.
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1-80GHz.
Si3N4
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Excelics Semiconductor
Abstract: wrist
Text: Excelics Semiconductor, Inc. DISTRIBUTION: CEO Marketing & Sales Human Resources Engineering Services Approvals Design & Test Engineering Fabrication Assembly & Test Purchasing Quality Assurance Document Control Shipping & Receiving ALL REV DESCRIPTION 01
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Filtronic
Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15
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FPD3000
FPD2250
FPD1500
FPD1050
FPD750
FPD6836
FPD200
FPD7612
EPA240B
EPA160B
Filtronic
EUDYNA
fpd6836
epa018a
FPD750
ph15 transistor
FLC087XP
FPD3000
FPD7612
FPD1500
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Untitled
Abstract: No abstract text available
Text: Excelics Semiconductor, Inc. Approvals Rev Date Description Website Publish Date: Date: Date: Date: Date: Date: A1 06/27/07 940-103556-01-A1.doc Electronic File ID Eng Mgr: Res Eng: Date: Preliminary DATA SHEET, RFMA1720-0.5W-Q7 DOCUMENT NUMBER: 1SNR6 CAGE CODE
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940-103556-01-A1
RFMA1720-0
940-103556-01-A1
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EPA090A
Abstract: No abstract text available
Text: Excelics EPA090A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +28.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 900 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA090A
18GHz
12GHz
EPA090A
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EPA1200A
Abstract: No abstract text available
Text: Excelics EPA1200A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +39.5dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.4 X 12,000 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA1200A
300mA
EPA1200A
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CP083
Abstract: No abstract text available
Text: EXCELICS SEMICONDUCTOR, INC. Packaged FET Equivalent Circuit Model Shown below is an approximate model for use with packaged FETs. The FET shown in the schematic can be replaced with the small signal or large signal model for the chip, including bond wire inductances. The element values shown
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OT-89
CP083
CP083
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EPA680A
Abstract: No abstract text available
Text: Excelics EPA680A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +37.0dBm TYPICAL OUTPUT POWER 7.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 6800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA680A
12GHz
180mA
EPA680A
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Untitled
Abstract: No abstract text available
Text: Excelics Semiconductor, Inc. Approvals Rev Date Description Website Publish Date: Date: Date: Date: Date: Date: A1 02/10/05 DATA SHEET, EIC3439-8 940-102759-01-A1.doc Electronic File ID Eng Mgr: Res Eng: Date: PRELIMINARY DOCUMENT NUMBER: 1SNR6 CAGE CODE 940-102759-01-A1
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EIC3439-8
940-102759-01-A1
940-102759-01-A1
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EPA480C
Abstract: 408 7443 Excelics Semiconductor
Text: Excelics EPA480C DATA SHEET High Efficiency Heterojunction Power FET 680 • • • • • • +36.0dBm TYPICAL OUTPUT POWER 19.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA480C
120mA
EPA480C
408 7443
Excelics Semiconductor
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EPA080A
Abstract: No abstract text available
Text: Excelics EPA080A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 510 +27.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA080A
18GHz
12GHz
EPA080A
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EPA680A-180F
Abstract: No abstract text available
Text: Excelics EPA680A-180F PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC 180MIL METAL FLANGE PACKAGE +37.5dBm TYPICAL OUTPUT POWER 17.5dB TYPICAL POWER GAIN AT 2GHz 0.4 X 6800 MICRON RECESSED “MUSHROOM” GATE
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EPA680A-180F
180MIL
EPA680A-180F
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EPB025A
Abstract: No abstract text available
Text: Excelics EPB025A DATA SHEET Low Noise High Gain Heterojunction FET • • • • • 420 TYPICAL 0.8dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
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EPB025A
12GHz
Micr128
EPB025A
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VP 4932
Abstract: EPA480C-180F
Text: Excelics EPA480C-180F PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC 180MIL METAL FLANGE PACKAGE +36.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.4 X 4800 MICRON RECESSED “MUSHROOM” GATE
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EPA480C-180F
180MIL
VP 4932
EPA480C-180F
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s-parameter s11 s12 s21
Abstract: EPA040A S21-Magnitude GHz-210 Bias "One Year Repeatability"
Text: EXCELICS SEMICONDUCTOR, INC. S-Parameter Uniformity Data was measured on EPA040A devices, from 1 to 26GHz. Devices were assembled in a microstrip test fixture. S-parameters include bond wires. Devices were biased at 8V, half Idss. Consequently this data includes not only variations in device characteristics, but also variations
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EPA040A
26GHz.
s-parameter s11 s12 s21
S21-Magnitude
GHz-210
Bias "One Year Repeatability"
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EPA160B
Abstract: No abstract text available
Text: Excelics EPA160B DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +31.0dBm TYPICAL OUTPUT POWER 5.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA160B
18GHz
12GHz
EPA160B
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EPA030C
Abstract: No abstract text available
Text: Excelics EPA030C DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +23.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 300 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA030C
18GHz
12GHz
EPA030C
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eutectic 157
Abstract: EPA120A
Text: Excelics EPA120A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA120A
18GHz
12GHz
eutectic 157
EPA120A
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EPA160A
Abstract: No abstract text available
Text: Excelics EPA160A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA160A
18GHz
12GHz
EPA160A
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